Doped lead-zirconate-titanate(PZT)thin films are preferred for the development of micro-electro-mechanical systems(MEMS)-based acoustic sensors because of their inherent higher dielectric and piezoelectric coefficient...Doped lead-zirconate-titanate(PZT)thin films are preferred for the development of micro-electro-mechanical systems(MEMS)-based acoustic sensors because of their inherent higher dielectric and piezoelectric coefficients.Patterning process is used to develop such MEMS devices which is highly complex even for undoped PZT thin films;therefore,the problem is further cumbersome for doped PZT thin films due to the presence of added dopant elements and their associated chemistry.This paper presents patterning of strontium(Sr)and lanthanum(La)co-doped PZT thin film(PSLZT)deposited on platinized silicon substrate using wet and dry etching processes for fabricating a diaphragm structure with thickness of 15-25μm and diameter of 1.4-2 mm,suitable for acoustic sensing applications.The effects of various etching conditions have been studied and the results are reported.It is found that the dry etching is the most suited process for realizing the piezoelectric MEMS structure due to its higher etching resolution.An appreciable etching rate of 260-270 nm/min with smooth vertical sidewalls is achieved.The silicon diaphragm with patterned PSLZT thin film is found to retain more than 80%of its dielectric and piezoelectric coefficients and has a resonance of 1.43 MHz.展开更多
In order to obtain high Qm ceramics,different additives including MnO2,Fe2O3 and K2CO3 were added into the base PZT composition of xPb（Zn0.2Sn0.3Mn0.5）1/3 Nb2/3 O3-（1-x）Pb（Zr0.3Ti0.5）O3.The mechanical quality fa...In order to obtain high Qm ceramics,different additives including MnO2,Fe2O3 and K2CO3 were added into the base PZT composition of xPb（Zn0.2Sn0.3Mn0.5）1/3 Nb2/3 O3-（1-x）Pb（Zr0.3Ti0.5）O3.The mechanical quality factor Qm increased while the piezoelectric constant decreased to some degree as MnO2 was added alone,Although apparent decreasing was observed in piezoelectric constanl d33 after MnO2 and Fe2O3 were added simultaneously,the mechanical quality factor Qm was kept at the same level as before,The values of d33 and Qm decreased dramatically as K2CO3 was added in combination with MnO2 and Fe2O3.The structure of grain boundary was damaged and more defects were generated by low valence K adding in this multi-impurified PZT solid.Mn doped sample presented a wide range of sintering temperatare,The properties parameters of Mn doped PZT are listed as follows;piezoelectric constant d33-256pC/N,mechanical quality factor Qm=2079,coupling coefficient Kp=0.53,Coercive field Ec=22.5kV/cm,Cure Temperature Tc=286℃.These parameters shonc that Mn-doped PZT ceramics are suitable for application in high Qm and transmitting materials.展开更多
文摘Doped lead-zirconate-titanate(PZT)thin films are preferred for the development of micro-electro-mechanical systems(MEMS)-based acoustic sensors because of their inherent higher dielectric and piezoelectric coefficients.Patterning process is used to develop such MEMS devices which is highly complex even for undoped PZT thin films;therefore,the problem is further cumbersome for doped PZT thin films due to the presence of added dopant elements and their associated chemistry.This paper presents patterning of strontium(Sr)and lanthanum(La)co-doped PZT thin film(PSLZT)deposited on platinized silicon substrate using wet and dry etching processes for fabricating a diaphragm structure with thickness of 15-25μm and diameter of 1.4-2 mm,suitable for acoustic sensing applications.The effects of various etching conditions have been studied and the results are reported.It is found that the dry etching is the most suited process for realizing the piezoelectric MEMS structure due to its higher etching resolution.An appreciable etching rate of 260-270 nm/min with smooth vertical sidewalls is achieved.The silicon diaphragm with patterned PSLZT thin film is found to retain more than 80%of its dielectric and piezoelectric coefficients and has a resonance of 1.43 MHz.
文摘In order to obtain high Qm ceramics,different additives including MnO2,Fe2O3 and K2CO3 were added into the base PZT composition of xPb（Zn0.2Sn0.3Mn0.5）1/3 Nb2/3 O3-（1-x）Pb（Zr0.3Ti0.5）O3.The mechanical quality factor Qm increased while the piezoelectric constant decreased to some degree as MnO2 was added alone,Although apparent decreasing was observed in piezoelectric constanl d33 after MnO2 and Fe2O3 were added simultaneously,the mechanical quality factor Qm was kept at the same level as before,The values of d33 and Qm decreased dramatically as K2CO3 was added in combination with MnO2 and Fe2O3.The structure of grain boundary was damaged and more defects were generated by low valence K adding in this multi-impurified PZT solid.Mn doped sample presented a wide range of sintering temperatare,The properties parameters of Mn doped PZT are listed as follows;piezoelectric constant d33-256pC/N,mechanical quality factor Qm=2079,coupling coefficient Kp=0.53,Coercive field Ec=22.5kV/cm,Cure Temperature Tc=286℃.These parameters shonc that Mn-doped PZT ceramics are suitable for application in high Qm and transmitting materials.
