Evaluation of The Thermal Performance of Multi-Element Doped Graphite under Steady-State High Heat Flux

Multi-element doped graphite, GBST1308 has been developed as a plasma facing material (PFM) for high heat flux components of the HT-7U device. The thermal performance of the material under steady-state (SS) high heat flux was evaluated under actively cooling conditions, the specimens were mechanically joined to copper heat sink with supercarbon sheet as a compliant layer between the interfaces. The experiments have been performed in a facility of ACT (actively cooling test stand) with a 100 kW electron gun in order to test the suitability and the loading limit of such materials. The surface temperature and bulk temperature distribution of the specimens were investigated. The experimental results are very encouraging that when heat flux is not more than 6 MW/m2, the surface temperature of GBST1308 is less than 1000℃, which is the lowest, compared with IG-430U and even with CX-2002U (CFC); The primary results indicate that the mechanically-joined material system by such a proper design as thin tile, super compliant layer, GBST as a PFM and copper-alloy heat sink, can be used as divertor plates for HT-7U in the first phase.

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy（XPS） spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×105 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.

Field emission characteristics of nano-diamond cathode surface by graphitization pretreatment

Cathode samples of nano-diamond by graphitization pretreatment with different temperatures were fabricated by electrophoresis, then the structures and morphologies of the cathode samples were characterized by scanning electron microscope(SEM) and X-ray diffraction(XRD), and the field emission tests were conducted. The effects of graphitization pretreatment on the field emission characteristics of nano-diamond cathode surface on titanium substrate are studied. The results indicate that the surface morphologies of nano-diamond cathode samples after graphitization pretreatment change a lot, and the field emission characteristics in low-voltage area are improved obviously. However, in high-voltage area, the curve distortion happens, and it doesn't conform the mechanism of field emission characteristics.