Effects of Mg doping content and annealing temperature on the structural properties of Zn_(1-x)Mg_xO thin films prepared by radio-frequency magnetron sputtering

The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn_(1-x )Mg_xO thin films. Here,using radio-frequency magnetron sputtering method,we prepared Zn_(1-x )Mg_xO thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction(XRD) and scanning electron microscope(SEM),the crystalline structure and morphology of Zn_(1-x )Mg_xO thin films with different x values are investigated. The crystalline structure of Zn_(1-x )Mg_xO thin film is single phase with x<0.3,while there is phase separation phenomenon with x>0.3,and hexagonal and cubic structures will coexist in Zn_(1-x )Mg_xO thin films with higher x values. Especially with lower x values,a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn_(1-x )Mg_xO thin film. The crystalline quality has been improved and the inner stress has been released,after the Zn_(1-x )Mg_xO thin films were annealed at 600 °C in vacuum condition.

Synthesis and Characterization of Li-doped LaMnO_3 CMR Materials

A series of bulk polycrystalline La1-xLixMnO3 samples with x ranging from 0.1 to 0.5 was prepared by sol-gel method,X-ray diffraction patterns show that the crystal structures are single rhombohedral perorskite for the x≤0.3 sample and the impurity appears when x〉0.3.Under the same synthesized conditions,the higher Li content samples display a higher content of liquid phase content and larger mean grain sizes,which leads to the increases of the effect of the grain boundaries.The experimental results show that the change of the ferromagnetic transition temperature and the resistivity can attribute to the effect of the grain boundary and the connectivity of the inter grains as well as the ratio of Mn^3＋ to Mn^4＋.

Comprehensive Optimization of Electrical and Optical Properties for ATO Films Prepared by Pulsed Laser Deposition

Antimony doped tin oxide（ATO） thin films have been prepared by pulsed laser deposition（PLD） method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb（3＋） and Sb（5＋） and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated.It is suggested that the transition degree of Sb（3＋） towards Sb（5＋）（Sb（5＋）/Sb（3＋） ratio） is determined by Sb content.When the Sb content is increased to 12 at%,the Sb（5＋）/Sb（3＋） ratio reaches the highest value of 2.05,corresponding to the resistivity of 2.70×10（-3） Ω·cm.Meanwhile,the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%,corresponding to the highest average optical transmittance of 92%.Comprehensively considering the combination of electrical and optical properties,the ATO thin films deposited with Sb content of 12 at%exhibit the best properties with the highest ＂figure of merit＂ of 3.85×10（-3） Ω（-1）.Finally,an antimony selenide（Sb_2Se_3） heterojunction solar cell prototype with the ATO thin film as the anode has been prepared,and a power conversion efficiency of 0.83%has been achieved.