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Electronic Structure and Chemical Bond of Ti_3SiC_2 and Adding Al Element 被引量:1
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作者 闵新民 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2006年第2期21-24,共4页
The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation ( DFT- DVM) method. When Al element is added into Ti3 SiC2 , there i... The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation ( DFT- DVM) method. When Al element is added into Ti3 SiC2 , there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3 SiC2 , adding a proper quantity of Al can promote the formation of Ti3 SiC2 . The density of stnte shows that there is a mixed conductor character in both of Ti3 SiC2 and adding Al element. Ti3 SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al. 展开更多
关键词 TI3SIC2 doping of al electronic structure chemical bond
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