Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 ...Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.展开更多
Hydrothermal fabrication of selectively doped（Ag＋＋ Pd3＋） advanced ZnO nanomaterial has been carried out under mild pressure temperature conditions（autogeneous; 150°C）.Gluconic acid has been used as a surfa...Hydrothermal fabrication of selectively doped（Ag＋＋ Pd3＋） advanced ZnO nanomaterial has been carried out under mild pressure temperature conditions（autogeneous; 150°C）.Gluconic acid has been used as a surface modifier to effectively control the particle size and morphology of these ZnO nanoparticles. The experimental parameters were tuned to achieve optimum conditions for the synthesis of selectively doped ZnO nanomaterials with an experimental duration of 4 hr. These selectively doped ZnO nanoparticles were characterized using powder X-ray diffraction（XRD）, Fourier transform infrared spectroscopy（FT-IR）, UV–Vis spectroscopy and scanning electron microscopy（SEM）. The solar driven photocatalytic studies have been carried out for organic dyes, i.e., Procion MX-5B dye,Cibacron Brilliant Yellow dye, Indigo Carmine dye, separately and all three mixed, by using gluconic acid modified selectively doped advanced ZnO nanomaterial. The influence of catalyst, its concentration and initial dye concentration resulted in the photocatalytic efficiency of 89% under daylight.展开更多
文摘Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.
基金supported by University Grant Commission under University with Potential for excellence Programme (UPE), University of Mysore
文摘Hydrothermal fabrication of selectively doped（Ag＋＋ Pd3＋） advanced ZnO nanomaterial has been carried out under mild pressure temperature conditions（autogeneous; 150°C）.Gluconic acid has been used as a surface modifier to effectively control the particle size and morphology of these ZnO nanoparticles. The experimental parameters were tuned to achieve optimum conditions for the synthesis of selectively doped ZnO nanomaterials with an experimental duration of 4 hr. These selectively doped ZnO nanoparticles were characterized using powder X-ray diffraction（XRD）, Fourier transform infrared spectroscopy（FT-IR）, UV–Vis spectroscopy and scanning electron microscopy（SEM）. The solar driven photocatalytic studies have been carried out for organic dyes, i.e., Procion MX-5B dye,Cibacron Brilliant Yellow dye, Indigo Carmine dye, separately and all three mixed, by using gluconic acid modified selectively doped advanced ZnO nanomaterial. The influence of catalyst, its concentration and initial dye concentration resulted in the photocatalytic efficiency of 89% under daylight.
