It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction （DCXRD） and mi...It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction （DCXRD） and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.展开更多
In the present investigation,twinned substructures within lath martensite of two water quenched steels(0.2 wt.%C and 0.8 wt.%C)were studied.The lath martensite has typical hierarchical packet-block-lath with dislocati...In the present investigation,twinned substructures within lath martensite of two water quenched steels(0.2 wt.%C and 0.8 wt.%C)were studied.The lath martensite has typical hierarchical packet-block-lath with dislocation substructure.Besides,laths that are misoriented by<011>/70.5°or<111>/60° and bordered by{011}plane,namely twinned laths,are observed,of which the density increases and the scale decreases as more carbons were presented.Such twinned laths have body centered cubic(bcc)crystal structure,belonging to twinned variants following the classical Kurdjumov-Sachs(K-S)orientation relationship with respect to the parent austenite.Unlike bcc{112}<111>twins,twinned variants produce strong double diffraction and in turn the extra diffraction spots that are commonly observed in the martensite in steels with wide range of carbon contents.展开更多
An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate （PSS） by metalorganic chemical vapor deposition （MOCVD）. The vapor phase epitaxy starts from the regions with no...An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate （PSS） by metalorganic chemical vapor deposition （MOCVD）. The vapor phase epitaxy starts from the regions with no etched pits and then spreads laterally to form a continuous GaN film. The properties of the GaN film have been investigated by double crystal X-ray diffraction （DCXRD）, atomic force microscopy （AFM） and photoluminescence （PL）, respectively. The full-width at half-maximum （FWHM） of the X-ray diffraction curves （XRCs） for the GaN film grown on PSS in the （0002） plane and the （1012） plane are as low as 312.80 arcsec and 298.08 acrsec, respectively. The root mean square （RMS） of the GaN film grown on PSS is 0.233 nm and the intensity of the PL peak is comparatively strong.展开更多
基金This work is supported by the National Natural Science Foundation of China （Grant Nos. 60336010 ＆ 90401001）973 Program （Grant No. TG 2000036603）the Student Innovation Program of CAS （No. 1731000500010）.
文摘It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction （DCXRD） and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.
基金supported financially by the Hundred Outstanding Creative Talents Projects in Hebei University,Chinathe Project Program of Heavy Machinery Collaborative Innovation Center,the National Natural Science Foundation(Grant No.51231006,51171182 and 51471039)。
文摘In the present investigation,twinned substructures within lath martensite of two water quenched steels(0.2 wt.%C and 0.8 wt.%C)were studied.The lath martensite has typical hierarchical packet-block-lath with dislocation substructure.Besides,laths that are misoriented by<011>/70.5°or<111>/60° and bordered by{011}plane,namely twinned laths,are observed,of which the density increases and the scale decreases as more carbons were presented.Such twinned laths have body centered cubic(bcc)crystal structure,belonging to twinned variants following the classical Kurdjumov-Sachs(K-S)orientation relationship with respect to the parent austenite.Unlike bcc{112}<111>twins,twinned variants produce strong double diffraction and in turn the extra diffraction spots that are commonly observed in the martensite in steels with wide range of carbon contents.
基金supported by the National Natural Science Foundation of China (No. 50602018)
文摘An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate （PSS） by metalorganic chemical vapor deposition （MOCVD）. The vapor phase epitaxy starts from the regions with no etched pits and then spreads laterally to form a continuous GaN film. The properties of the GaN film have been investigated by double crystal X-ray diffraction （DCXRD）, atomic force microscopy （AFM） and photoluminescence （PL）, respectively. The full-width at half-maximum （FWHM） of the X-ray diffraction curves （XRCs） for the GaN film grown on PSS in the （0002） plane and the （1012） plane are as low as 312.80 arcsec and 298.08 acrsec, respectively. The root mean square （RMS） of the GaN film grown on PSS is 0.233 nm and the intensity of the PL peak is comparatively strong.
