Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain （MSG/MAG） and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

Fabrication of g-C_(3)N_(4) nanosheet/Bi_(5)O_(7)Br/NH_(2)-MIL-88B(Fe)nanocomposites:Double S-scheme photocatalysts with impressive performance for the removal of antibiotics under visible light

Novel graphitic carbon nitride(g-C_(3)N_(4))nanosheet/Bi_(5)O_(7)Br/NH_(2)-MIL-88B(Fe)photocatalysts(denoted as GCN-NSh/Bi_(5)O_(7)Br/FeMOF,in which MOF is metal–organic framework)with double S-scheme heterojunctions were synthesized by a facile solvothermal route.The resultant materials were examined by X-ray photoelectron spectrometer(XPS),X-ray diffraction(XRD),scanning electron microscopy(SEM),energy dispersive X-ray spectroscopy(EDX),transmission electron microscopy(TEM),high-resolution transmission electron microscopy(HRTEM),photoluminescence spectroscopy(PL),Fourier transform infrared spectroscopy(FT-IR),UV-Vis diffuse reflection spectroscopy(UV-vis DRS),photocurrent density,electrochemical impedance spectroscopy(EIS),and Brunauer–Emmett–Teller(BET)analyses.After the integration of Fe-MOF with GCN-NSh/Bi_(5)O_(7)Br,the removal constant of tetracycline over the optimal GCN-NSh/Bi_(5)O_(7)Br/Fe-MOF(15wt%)nanocomposite was promoted 33 times compared with that of the pristine GCN.The GCN-NSh/Bi_(5)O_(7)Br/Fe-MOF(15wt%)nanocomposite showed superior photoactivity to azithromycin,metronidazole,and cephalexin removal that was 36.4,20.2,and 14.6 times higher than that of pure GCN,respectively.Radical quenching tests showed that·O_(2)-and h+mainly contributed to the elimination reaction.In addition,the nanocomposite maintained excellent activity after 4 successive cycles.Based on the developed n–n heterojunctions among n-GCN-NSh,n-Bi_(5)O_(7)Br,and n-Fe-MOF semiconductors,the double S-scheme charge transfer mechanism was proposed for the destruction of the selected antibiotics.

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors（DHBTs） based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.

Performance of an InP DHBT Grown by MBE

We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.

Fabrication of 3D biomimetic composite coating with broadband antireflection, superhydrophilicity, and double p-n heterojunctions

The traditional single material with two-dimensional （2D） biomimetic moth-eye structures is limited by its narrowband antireflection and single functional capability. To overcome these disadvantages, we exploited wet etching and hydrothermal synthesis coupled with chemical oxidation for fabricating a three- dimensional （3D） biomimetic moth-eye coating with ternary materials （polypyrrole nanoparticles, TiO2 nanorods, and Si micropyramids, i.e., PPy/TiOa/Si-p）. This coating reduced the reflectivity to 〈4% at wavelengths ranging from 200 to 2,300 nm and exhibited remarkable superhydrophilidty with a low water contact angle of 1.8°. Moreover, the composite coating had double p-n heterojunctions, allowing the high-efficiency separation of photogenerated carriers. The photo- current density of PPy/TiO2/Si-p was more than three times higher than that of TiO2/Si-p at a positive potential of 1.5 V. The proposed method provides a means to enhance solar energy conversion.

InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE

Heterojunction bipolar transistor (HBT) is of great interest for the application to microwave power and analog circuits. As known, decreasing bandgap energy of the base layer in HBT can result in a smaller turn-on voltage. Using InGaAs as a base material in GaAs HBT is a possible approach to achieve the aim. In this work, a novel InGaP/InGaAs/GaAs double heterojunction bipolar transistor (DHBT) structure with an InGaAs base was designed and grown by gas source molecular beam epitaxy (GSMBE). High-quality InGaAs/GaAs hetero epi-layers and a good doping figure were obtained through optimizing the layer structure and the growth condition. The DHBT devices of a 120 μm×120 μm emitter area were fabricated by normal process and the good DC performance was obtained. A breakdown voltage of 10 V and an offset voltage of just 0.4 V were achieved. These results indicate that the InGaP/InGaAs/GaAs DHBT is suitable for low power-dissipation and high power applications.

Selective removal of sulfamethoxazole by a novel double Z-scheme photocatalyst:Preferential recognition and degradation mechanism

Sulfamethoxazole(SMX)is a significant environmental concern due to its adverse effects and ecological risks.SMX elimination in aquatic environments via photocatalysis presents a viable solution,given its high oxidation potential.However,such a solution remains controversial,primarily due to a lack of selectivity.Here we introduce a molecularly imprinted TiO2@Fe_(2)O_(3)@g-C_(3)N_(4)(MFTC)photocatalyst designed for the selective degradation of SMX.To assess MFTC's selectivity,we applied it to degrade synthetic wastewater containing SMX alongside interfering species sulfadiazine(SDZ),ibuprofen(IBU),and bisphenol A(BPA).The results demonstrated a selective degradation efficiency rate of 96.8%,nearly twice that of competing pollutants.The molecularly imprinted sites within the catalyst played a crucial role by selectively capturing SMX and enhancing its adsorption,thereby improving catalytic efficiency.The degradation process involvedOH and·O_(2)^(-)free radicals,with a newly proposed double Z-scheme mechanism and potential pathway for SMX degradation by the MFTC photocatalytic system.This study enriches the application of photocatalysis using molecularly imprinted nanocomposite materials for treating complex pollutant mixtures in water.

Characteristics of AlGaN/GaN/AlGaN double heteroj unction HEMTs with an improved breakdown voltage

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors （DH-HEMTs） with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two- dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs （-100 V） was significantly improved compared to that of conventional AlGaN/GaN HEMTs （-50 V） for the device with gate dimensions of 0.5 - 100μm and a gate-drain distance of 1μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

Frequency stability of InP HBT over 0.2 to 220 GHz

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.