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Spin transport properties in double quantum rings connected in series
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作者 杜坚 王素新 潘江洪 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期1-5,共5页
A new model of metal/semiconductor/metal double-quantum-ring connected in series is proposed and the transport properties in this model are theoretically studied. The results imply that the transmission coefficient sh... A new model of metal/semiconductor/metal double-quantum-ring connected in series is proposed and the transport properties in this model are theoretically studied. The results imply that the transmission coefficient shows periodic variations with increasing semiconductor ring size. The effects of the magnetic field and Rashba spin-orbit interaction on the transmission coefficient for two kinds of spin state electrons are different. The number of the transmission coefficient peaks is related to the length ratio between the upper arm and the half circumference of the ring. In addition, the transmission coefficient shows oscillation behavior with enhanced external magnetic field, and the corresponding average value is related to the two leads' relative position. 展开更多
关键词 transmission coefficient double quantum rings Rashba spin-orbit interaction
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Electronic structure of GaAs/A1GaAs quantum double rings in lateral electric field 被引量:1
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作者 Y.Yao T.Ochiai +4 位作者 T.Mano T.Kuroda T.Noda N.Koguchi K.Sakoda 《Chinese Optics Letters》 SCIE EI CAS CSCD 2009年第10期882-885,共4页
A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the ... A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method. The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies. It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm. 展开更多
关键词 GAAS Electronic structure of GaAs/A1GaAs quantum double rings in lateral electric field
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