Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL （drain induced barrier lowering） effect for short channel 4H-SiC metal...Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL （drain induced barrier lowering） effect for short channel 4H-SiC metal semiconductor field effect transistors （MESFETs）. An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a （channel length/channel depth） ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETs device.展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
基金Project partly supported by National Defense Basic Research Program of China (Grant No 51327010101)
文摘Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL （drain induced barrier lowering） effect for short channel 4H-SiC metal semiconductor field effect transistors （MESFETs）. An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a （channel length/channel depth） ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETs device.
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
