The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Al...The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.展开更多
The electron swarm parameters including the density-normalized effective ionization coefficients（α-η）/N and the electron drift velocities V e are calculated for a gas mixture of CF3I with N2 and CO2 by solving the...The electron swarm parameters including the density-normalized effective ionization coefficients（α-η）/N and the electron drift velocities V e are calculated for a gas mixture of CF3I with N2 and CO2 by solving the Boltzmann equation in the condition of a steady-state Townsend（SST） experiment.The overall density-reduced electric field strength is from 100 Td to 1000 Td（1 Td = 10-17V·cm2）,while the CF3I content k in the gas mixture can be varied over the range from 0% to 100%.From the variation of（αη）/N with the CF3I mixture ratio k,the limiting field strength（E/N） lim for each CF3I concentration is derived.It is found that for the mixtures with 70% CF3I,the values of（E/N） lim are essentially the same as that for pure SF 6.Additionally,the global warming potential（GWP） and the liquefaction temperature of the gas mixtures are also taken into account to evaluate the possibility of application in the gas insulation of power equipment.展开更多
We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then ...We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.展开更多
The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the mai...The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.展开更多
针对浮式生产储油船(Floating production storage and offloading, FPSO)在深水作业时面临的恶劣海况问题,为保证其服役期间的安全性及作业效率,需要准确计算非线性波浪荷载和运动响应。本文应用基于计算流体动力学(Computational flui...针对浮式生产储油船(Floating production storage and offloading, FPSO)在深水作业时面临的恶劣海况问题,为保证其服役期间的安全性及作业效率,需要准确计算非线性波浪荷载和运动响应。本文应用基于计算流体动力学(Computational fluid dynamics, CFD)的软件STAR-CCM+建立了针对实尺度FPSO模型的数值水池,基于Richardson外推法,针对时间步长和网格尺寸,分析了二者的收敛性和数值不确定度。使用该数值水池模拟了不同波浪工况作用下FPSO的运动响应,计算其受到的二阶波浪力,并与势流结果进行对比。结果发现,随着波陡增大,平均波浪力的CFD结果逐渐大于势流结果,且呈现差异化增大。而波陡大于1/15时,纵摇的CFD结果明显大于势流结果。说明大波陡条件下,黏性效应对平均波浪力和纵摇影响明显,为恶劣海况下预报及修正FPSO的二阶波浪力和运动提供了参考。展开更多
The electron drift velocity, electron energy distribution function （EEDF）, densitynormalized effective ionization coefficient and density-normalized longitudinal diffusion velocity are calculated in SF6-O2 and SFs-A...The electron drift velocity, electron energy distribution function （EEDF）, densitynormalized effective ionization coefficient and density-normalized longitudinal diffusion velocity are calculated in SF6-O2 and SFs-Air mixtures. The experimental results from a pulsed Townsend discharge are plotted for comparison with the numerical results. The reduced field strength varies from 40 Td to 500 Td （1 Townsend=10-17 V.cm2） and the SF6 concentration ranges from 10% to 100%. A Boltzmann equation associated with the two-term spherical harmonic expansion approximation is utilized to gain the swarm parameters in steady-state Townsend. Results show that the accuracy of the Boltzlnann solution with a two-term expansion in calculating the electron drift velocity, electron energy distribution function, and density-normalized effective ionization coefficient is acceptable. The effective ionization coefficient presents a distinct relationship with the SF6 content in the mixtures. Moreover, the E/Ncr values in SF6-Air mixtures are higher than those in SF6-O2 mixtures and the calculated value E/Ncr in SF6-O2 and SF6-Air mixtures is lower than the measured value in SFB-N2. Parametric studies conducted on these parameters using the Boltzmann analysis offer substantial insight into the plasma physics, as well as a basis to explore the ozone generation process.展开更多
In this study dynamic analysis of Soil Structure Interaction (SSI) effect on multi story reinforced concrete (RC) frame founded on soft soil (flexible base) is made and compared with fixed base. Two model 2D RC frames...In this study dynamic analysis of Soil Structure Interaction (SSI) effect on multi story reinforced concrete (RC) frame founded on soft soil (flexible base) is made and compared with fixed base. Two model 2D RC frames with 7 and 12 story are selected for analysis. Winkler Spring and half space direct method models are used for flexible base for the frames founded on two types of soft soils with shear velocity Vs < 150 m/s Asper Seismic Codes of Chinese GB50011-2010 Soil IV and Ethiopian ES8-2015 soil D. The frames are subjected to strong ground motion matched to response spectrums of soft soil of Chinese GB50011-2010 and Ethiopian ES8-2015 for linear time history analysis. The dynamic analysis result shows Spring and Fixed base mass participation 90% reaches in 2 or 3 modes but in direct method 11 to 30 modes for story 12 and 7 respectively. However, both flexible base models have bigger fundamental period of vibration and inter story drift but smaller base shear than fixed base. In addition, within the flexible base models the inter-story drift, second order effect (P-Δ) and Story shear distribution are different along the height of frames. The spring model shows larger Story drift and second order effect (P-Δ) at the bottom of Story for both soft soils types. On the other hand, half space direct method model indicates value reverse to spring model;it gives bigger Story drift and P-Δ effect in the top stories than fixed base. Finally, this study concludes that base shear reduction due to SSI may not be always beneficial. Because the gravity load is constant in both fixed and flexible bases that cause bigger P-Δ effect at the bottom stories due to increase, inter story drift and decrease story shear in flexible base.展开更多
文章针对总剂量效应造成的MOSFET阈值漂移问题,使用1 200 V SiC MOSFET进行辐照试验,对栅极偏压和辐照后高温栅极偏置退火对阈值漂移的影响和原理进行了研究。通过中带电压法分析发现,造成阈值电压负向漂移的主要原因是辐照产生的空穴...文章针对总剂量效应造成的MOSFET阈值漂移问题,使用1 200 V SiC MOSFET进行辐照试验,对栅极偏压和辐照后高温栅极偏置退火对阈值漂移的影响和原理进行了研究。通过中带电压法分析发现,造成阈值电压负向漂移的主要原因是辐照产生的空穴被近界面陷阱俘获。通过对不同栅极氧化层退火条件制备的SiC MOSFET试验和分析,得出了当使用氮化气体退火进行总剂量效应加固时,需要折中考虑对沟道迁移率的影响;在5%氮化气体体积分数、1 300℃下退火60 min的条件下制备出来的SiC MOSFET沟道迁移率较高,并且抗总剂量效应能力较强。展开更多
文摘The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.
基金Project supported by the National Natural Science Foundation of China (Grant No. 51177101)
文摘The electron swarm parameters including the density-normalized effective ionization coefficients（α-η）/N and the electron drift velocities V e are calculated for a gas mixture of CF3I with N2 and CO2 by solving the Boltzmann equation in the condition of a steady-state Townsend（SST） experiment.The overall density-reduced electric field strength is from 100 Td to 1000 Td（1 Td = 10-17V·cm2）,while the CF3I content k in the gas mixture can be varied over the range from 0% to 100%.From the variation of（αη）/N with the CF3I mixture ratio k,the limiting field strength（E/N） lim for each CF3I concentration is derived.It is found that for the mixtures with 70% CF3I,the values of（E/N） lim are essentially the same as that for pure SF 6.Additionally,the global warming potential（GWP） and the liquefaction temperature of the gas mixtures are also taken into account to evaluate the possibility of application in the gas insulation of power equipment.
文摘We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.
文摘The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive devices.It is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication conditions.The temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset circuit.The measurement system combines with shifting circuit,differential and instrument amplifiers.We employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.
文摘针对浮式生产储油船(Floating production storage and offloading, FPSO)在深水作业时面临的恶劣海况问题,为保证其服役期间的安全性及作业效率,需要准确计算非线性波浪荷载和运动响应。本文应用基于计算流体动力学(Computational fluid dynamics, CFD)的软件STAR-CCM+建立了针对实尺度FPSO模型的数值水池,基于Richardson外推法,针对时间步长和网格尺寸,分析了二者的收敛性和数值不确定度。使用该数值水池模拟了不同波浪工况作用下FPSO的运动响应,计算其受到的二阶波浪力,并与势流结果进行对比。结果发现,随着波陡增大,平均波浪力的CFD结果逐渐大于势流结果,且呈现差异化增大。而波陡大于1/15时,纵摇的CFD结果明显大于势流结果。说明大波陡条件下,黏性效应对平均波浪力和纵摇影响明显,为恶劣海况下预报及修正FPSO的二阶波浪力和运动提供了参考。
基金supported by National Natural Science Foundation of China(Nos.11105067 and 51366012)Jiangxi Province Young Scientists(Jinggang Star)Cultivation Plan of China(No.2013BCB23008)
文摘The electron drift velocity, electron energy distribution function （EEDF）, densitynormalized effective ionization coefficient and density-normalized longitudinal diffusion velocity are calculated in SF6-O2 and SFs-Air mixtures. The experimental results from a pulsed Townsend discharge are plotted for comparison with the numerical results. The reduced field strength varies from 40 Td to 500 Td （1 Townsend=10-17 V.cm2） and the SF6 concentration ranges from 10% to 100%. A Boltzmann equation associated with the two-term spherical harmonic expansion approximation is utilized to gain the swarm parameters in steady-state Townsend. Results show that the accuracy of the Boltzlnann solution with a two-term expansion in calculating the electron drift velocity, electron energy distribution function, and density-normalized effective ionization coefficient is acceptable. The effective ionization coefficient presents a distinct relationship with the SF6 content in the mixtures. Moreover, the E/Ncr values in SF6-Air mixtures are higher than those in SF6-O2 mixtures and the calculated value E/Ncr in SF6-O2 and SF6-Air mixtures is lower than the measured value in SFB-N2. Parametric studies conducted on these parameters using the Boltzmann analysis offer substantial insight into the plasma physics, as well as a basis to explore the ozone generation process.
文摘In this study dynamic analysis of Soil Structure Interaction (SSI) effect on multi story reinforced concrete (RC) frame founded on soft soil (flexible base) is made and compared with fixed base. Two model 2D RC frames with 7 and 12 story are selected for analysis. Winkler Spring and half space direct method models are used for flexible base for the frames founded on two types of soft soils with shear velocity Vs < 150 m/s Asper Seismic Codes of Chinese GB50011-2010 Soil IV and Ethiopian ES8-2015 soil D. The frames are subjected to strong ground motion matched to response spectrums of soft soil of Chinese GB50011-2010 and Ethiopian ES8-2015 for linear time history analysis. The dynamic analysis result shows Spring and Fixed base mass participation 90% reaches in 2 or 3 modes but in direct method 11 to 30 modes for story 12 and 7 respectively. However, both flexible base models have bigger fundamental period of vibration and inter story drift but smaller base shear than fixed base. In addition, within the flexible base models the inter-story drift, second order effect (P-Δ) and Story shear distribution are different along the height of frames. The spring model shows larger Story drift and second order effect (P-Δ) at the bottom of Story for both soft soils types. On the other hand, half space direct method model indicates value reverse to spring model;it gives bigger Story drift and P-Δ effect in the top stories than fixed base. Finally, this study concludes that base shear reduction due to SSI may not be always beneficial. Because the gravity load is constant in both fixed and flexible bases that cause bigger P-Δ effect at the bottom stories due to increase, inter story drift and decrease story shear in flexible base.
文摘文章针对总剂量效应造成的MOSFET阈值漂移问题,使用1 200 V SiC MOSFET进行辐照试验,对栅极偏压和辐照后高温栅极偏置退火对阈值漂移的影响和原理进行了研究。通过中带电压法分析发现,造成阈值电压负向漂移的主要原因是辐照产生的空穴被近界面陷阱俘获。通过对不同栅极氧化层退火条件制备的SiC MOSFET试验和分析,得出了当使用氮化气体退火进行总剂量效应加固时,需要折中考虑对沟道迁移率的影响;在5%氮化气体体积分数、1 300℃下退火60 min的条件下制备出来的SiC MOSFET沟道迁移率较高,并且抗总剂量效应能力较强。
