Asymmetric Drying and Wetting Trends in Eastern and Western China

As an important factor that directly affects agricultural production, the social economy, and policy implementation,observed changes in dry/wet conditions have become a matter of widespread concern. However, previous research has mainly focused on the long-term linear changes of dry/wet conditions, while the detection and evolution of the non-linear trends related to dry/wet changes have received less attention. The non-linear trends of the annual aridity index, obtained by the Ensemble Empirical Mode Decomposition(EEMD) method, reveal that changes in dry/wet conditions in China are asymmetric and can be characterized by contrasting features in both time and space in China. Spatially, most areas in western China have experienced transitions from drying to wetting, while opposite changes have occurred in most areas of eastern China. Temporally, the transitions occurred earlier in western China compared to eastern China. Research into the asymmetric spatial characteristics of dry/wet conditions compensates for the inadequacies of previous studies, which focused solely on temporal evolution;at the same time, it remedies the inadequacies of traditional research on linear trends over centennial timescales. Analyzing the non-linear trend also provides for a more comprehensive understanding of the drying/wetting changes in China.

Etching of quartz crystals in liquid phase environment:A review

Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency and geometrical precision are required.Wet etching has been proven to be the most efficient etching method for large-scale production of quartz devices,and many wet etching approaches have been developed over the years.However,until now,there has been no systematic review of quartz crystal etching in liquid phase environments.Therefore,this article provides a comprehensive review of the development of wet etching processes and the achievements of the latest research in thisfield,covering conventional wet etching,additive etching,laser-induced backside wet etching,electrochemical etching,and electrochemical discharge machining.For each technique,a brief overview of its characteristics is provided,associated problems are described,and possible solutions are discussed.This review should provide an essential reference and guidance for the future development of processing strategies for the manufacture of quartz crystal devices.

Decadal Changes in Dry and Wet Heatwaves in Eastern China:Spatial Patterns and Risk Assessment

Under global warming,understanding the long-term variation in different types of heatwaves is vital for China’s preparedness against escalating heat stress.This study investigates dry and wet heatwave shifts in eastern China over recent decades.Spatial trend analysis displays pronounced warming in inland midlatitudes and the Yangtze River Valley,with increased humidity in coastal regions.EOF results indicate intensifying dry heatwaves in northern China,while the Yangtze River Valley sees more frequent dry heatwaves.On the other hand,Indochina and regions north of 25°N also experience intensified wet heatwaves,corresponding to regional humidity increases.Composite analysis is conducted based on different situations:strong,frequent dry or wet heatwaves.Strong dry heatwaves are influenced by anticyclonic circulations over northern China,accompanied by warming SST anomalies around the coastal midlatitudes of the western North Pacific(WNP).Frequent dry heatwaves are related to strong subsidence along with a strengthened subtropical high over the WNP.Strong and frequent wet heatwaves show an intensified Okhotsk high at higher latitudes in the lower troposphere,and a negative circumglobal teleconnection wave train pattern in the upper troposphere.Decaying El Niño SST patterns are observed in two kinds of wet heatwave and frequent dry heatwave years.Risk analysis indicates that El Niño events heighten the likelihood of these heatwaves in regions most at risk.As global warming continues,adapting and implementing mitigation strategies toward extreme heatwaves becomes crucial,especially for the aforementioned regions under significant heat stress.

Wetting alternating with partial drying during grain filling increases lysine biosynthesis in inferior rice grain

Lysine content is a criterion of the nutritional quality of rice.Understanding the process of lysine biosynthesis in early-flowering superior grain(SG)and late-flowering inferior grain(IG)of rice would advance breeding and cultivation to improve nutritional quality.However,little information is available on differences in lysine anabolism between SG and IG and the underlying mechanism,and whether and how irrigation regimes affect lysine anabolism in these grains.A japonica rice cultivar was grown in the field and two irrigation regimes,continuous flooding(CF)and wetting alternating with partial drying(WAPD),were imposed from heading to the mature stage.Lysine content and activities of key enzymes of lysine biosynthesis,and levels of brassinosteroids(BRs)were lower in the IG than in the SG at the early grainfilling stage but higher at middle and late grain-filling stages.WAPD increased activities of these key enzymes,BR levels,and contents of lysine and total amino acids in IG,but not SG relative to CF.Application of 2,4-epibrassinolide to rice panicles in CF during early grain filling reproduced the effects of WAPD,but neither treatment altered the activities of enzymes responsible for lysine catabolism in either SG or IG.WAPD and elevated BR levels during grain filling increased lysine biosynthesis in IG.Improvement in lysine biosynthesis in rice should focus on IG.

Characteristics of Dry and Wet Climate in Shandong Province Based on Standardized Precipitation Index

Based on the monthly precipitation data of 116 meteorological stations in Shandong Province during 1970-2021,standardized precipitation index(SPI)was calculated,and the methods of linear fitting,mutation test and Morlet wavelet analysis were used to analyze the change trend and temporal and spatial distribution characteristics of SPI index in the past 52 years.The results show that there were more normal years in Shandong Province,and the frequency reached 38.46%.There was severe drought in the 1980s and more wet years after 2003.SPI index showed an upward trend in spring,summer and winter but a weak arid trend in autumn.In addition,intense dry weather was more frequent in summer.Spatially,the climate was normal or humid in most areas of Shandong Province.The regions with more wet years were located in the central and northeast Shandong and the peninsula,while the climate was normal in the southwest and north of Shandong.The areas with more dry years were mainly located in the northwest of Shandong Province.There was mainly local and global drought in Shandong Province,and the arid area showed a decreasing trend.In the past 52 years,Shandong Province experienced quasi-4 times of alternation between dry and wet climate.The long period of 21 a was the first main period,and the climate would be still wet in Shandong Province in the future.In terms of mutation,the climate in Shandong Province became humid after 2003,and 2003 was the mutation point.After the abrupt change,the climate changed from gradually drying to wetting.

Fabrication of Diamond Microstructures by Using Dry and Wet Etching Methods

Diamond films have great potential for micro-electro-mechanical system（MEMS） application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching（including isotropic-etching and anisotropic-etching） have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution （HC1/H3PO4）, and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system （ICP）. The results show that the wet etching （HCl-based） offers low cost and approximately vertical sidewall, whilst ICP system （C12-based） offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of 0.6 p.m/min and 1.2 pm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

Hydraulic and volume change behaviors of compacted highly expansive soil under cyclic wetting and drying

The wide engineered application of compacted expansive soils necessitates understanding their behavior under field conditions.The results of this study demonstrate how seasonal climatic variation and stress and boundary conditions individually or collectively influence the hydraulic and volume change behavior of compacted highly expansive soils.The cyclic wetting and drying(CWD)process was applied for two boundary conditions,i.e.constant stress(CS)and constant volume(CV),and for a wide range of axial stress states.The adopted CWD process affected the hydraulic and volume change behaviors of expansive soils,with the first cycle of wetting and drying being the most effective.The CWD process under CS conditions resulted in shrinkage accumulation and reduction in saturated hydraulic conductivity(k sat).On the other hand,CWD under CV conditions caused a reduction of swell pressure while has almost no impact on k sat.An elastic response to CWD was achieved after the third cycle for saturated hydraulic conductivity(k sat),the third to fourth cycle for the volume change potential under the CV conditions,and the fourth to fifth cycle for the volume change potential under the CS conditions.Finally,both swell pressure(s s)and saturated hydraulic conductivity(k sat)are not fundamental parameters of the expansive soil but rather depend on stress,boundary and wetting conditions.

Investigation on microstructure evolution of clayey soils: A review focusing on wetting/drying process

Variability in moisture content is a common condition in natural soils.It influences soil properties significantly.A comprehensive understanding of the evolution of soil microstructure in wetting/drying process is of great significance for interpretation of soil macro hydro-mechanical behavior.In this review paper,methods that are commonly used to study soil microstructure are summarized.Among them are scanning electron microscope(SEM),environmental SEM(ESEM),mercury intrusion porosimetry(MIP)and computed tomography(CT)technology.Moreover,progress in research on the soil microstructure evolution during drying,wetting and wetting/drying cycles is summarized based on reviews of a large body of research papers published in the past several decades.Soils compacted on the wet side of op-timum water content generally have a matrix-type structure with a monomodal pore size distribution(PSD),whereas soils compacted on the dry side of optimum water content display an aggregate structure that exhibits bimodal PSD.During drying,decrease in soil volume is mainly caused by the shrinkage of inter-aggregate pores.During wetting,both the intra-and inter-aggregate pores increase gradually in number and sizes.Changes in the characteristics of the soil pore structure significantly depend on stress state as the soil is subjected to wetting.During wetting/drying cycles,soil structural change is not completely reversible,and the generated cumulative swelling/shrinkage deformation mainly derives from macro-pores.Furthermore,based on this analysis and identified research needs,some important areas of research focus are proposed for future work.These areas include innovative methods of sample preparation,new observation techniques,fast quantitative analysis of soil structure,integration of microstructural parameters into macro-mechanical models,and soil microstructure evolution charac-teristics under multi-field coupled conditions.

Diversity of Arbuscular Mycorrhizal Fungi Associated with Six Rice Cultivars in Italian Agricultural Ecosystem Managed with Alternate Wetting and Drying

Alternate wetting and drying(AWD)system,in which water has been reduced by approximately 35%with an increased occurrence of beneficial arbuscular mycorrhizal(AM)symbiosis and no negative impact on rice yield,was proposed to utilize water and nutrients more sustainable.In this study,we selected six rice cultivars(Centauro,Loto,Selenio,Vialone nano,JSendra and Puntal)grown under AWD conditions,and investigated their responsiveness to AM colonization and how they select diverse AM taxa.In order to investigate root-associated AM fungus communities,molecular cloning-Sanger sequencing on small subunit rDNA data were obtained from five out of the six rice cultivars and compared with Next Generation Sequencing(NGS)data,which were previously obtained in Vialone nano.The results showed that all the cultivars were responsive to AM colonization with the development of AM symbiotic structures,even if with differences in the colonization and arbuscule abundance in the root systems.We identified 16 virtual taxa(VT)in the soil compartment and 7 VT in the root apparatus.We emphasized that the NGS analysis gives additional value to the results thanks to a more in-depth reading of the less represented AM fungus taxa.

Thermal–moisture dynamics and thermal stability of active layer in response to wet/dry conditions in the central region of the Qinghai–Tibet Plateau,China

The amount of rainfall varies unevenly in different regions of the Qinghai-Tibet Plateau, with some regions becoming wetter and others drier. Precipitation has an important impact on the process of surface energy balance and the energy-water transfer within soils. To clarify the thermal-moisture dynamics and thermal stability of the active layer in permafrost regions under wet/dry conditions, the verified water-vapour-heat coupling model was used. Changes in the surface energy balance, energy-water transfer within the soil, and thickness of the active layer were quantitatively analyzed. The results demonstrate that rainfall changes significantly affect the Bowen ratio, which in turn affects surface energy exchange. Under wet/dry conditions, there is a positive correlation between rainfall and liquid water flux under the hydraulic gradient;water vapour migration is the main form under the temperature gradient, which indicates that the influence of water vapour migration on thermalmoisture dynamics of the active layer cannot be neglected. Concurrently, regardless of wet or dry conditions,disturbance of the heat transport by conduction caused by rainfall is stronger than that of convection by liquid water. In addition, when rainfall decreases by 1.5 times(212 mm) and increases by 1.5 times(477 mm), the thickness of the active layer increases by 0.12 m and decreases by 0.21 m, respectively. The results show that dry conditions are not conducive to the preservation of frozen soil;however, wet conditions are conducive to the preservation of frozen soil, although there is a threshold value. When this threshold value is exceeded, rainfall is unfavourable for the development of frozen soil.

Fabrication of Nanoscale Step Height Structure Using Atomic Layer Deposition Combined with Wet Etching

The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition （ALD） and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide （Al2O3） is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt （PTB） and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.

Root distribution and influencing factors of dry-sowing and wet-growing cotton plants under different water conditions

To study the effect of soil water and salt environment factors on the root growth of cotton under different moisture control,three different emergence water volumes(60,105,and 150 m^(3)/hm^(2)),two different frequencies(high frequency and low frequency)and one double film cover winter irrigation control treatment(CK:2250 m^(3)/hm^(2))were set up to analyze the spatial distribution patterns of soil water and salt environment and root density in dry sown and wet emerged cotton fields under diffe-rent moisture control conditions.The results show that the soil water content and water infiltration range gradually become larger with the increase of seedling water quantity,and the larger the seedling water quantity,the higher the soil water content.With the same seedling water quantity,the soil water content of the high-frequency(HF)treatment becomes obviously larger.The soil conductivity of each treatment tends to decrease gradually with the increase of seedling water and drip frequency,among which the distribution of soil conductivity of S6 treatment is closest to that of CK.With the increase in soil depth,the soil conductivity tends to increase first and then decrease.Compared with the low-frequency(LF)treatment,the high-frequency treatment shows a significantly deeper soil salt accumulation layer.The root length density(RLD)of cotton gradually increases with the amount of seedling water and the frequency of dripping.The soil layer of root distribution gradually deepens with the amount of seedling water in the vertical direction,and the RLD value in the horizontal direction is significantly greater in the mulched area than that in the bare area between films.This research can serve as a solid scientific foundation for the use of dry sowing and wet emergence techniques in cotton fields in southern Xinjiang.

Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.

Wet etching and passivation of GaSb-based very long wavelength infrared detectors

The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects of etch parameters （rf power, dc-bias voltage and gas pressure） on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

Physical analysis of normally-off ALD Al_(2)O_(3)/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrate and Si sub-strate are prepared.It is found that the performance of sapphire substrate device is better than that of silicon substrate.Comparing these two devices,the maximum drain current of sapphire substrate device(401 mA/mm)is 1.76 times that of silicon substrate device(228 mA/mm),and the field-effect mobility(μ_(FEmax))of sapphire substrate device(176 cm^(2)/V·s)is 1.83 times that of silicon substrate device(96 cm^(2)/V·s).The conductive resistance of silicon substrate device is 21.2Ω-mm,while that of sapphire substrate device is only 15.2Ω·mm,which is 61%that of silicon substrate device.The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al_(2)O_(3)/GaN interface.Experimental studies show that(i)interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device,(ii)Both the border traps in Al_(2)O_(3) dielectric near Al_(2)O_(3)/GaN and the interface traps in Al_(2)O_(3)/GaN interface have a significantly effect on device channel mobility,and(iii)the properties of gallium nitride materials on different substrates are different due to wet etching.The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.

Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

Etching‐assisted femtosecond laser modification of hard materials

With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions. Femtosecond laser ablation has the capability to fabricate three-dimensional micro/nanostructures in hard materials. However, the low efficiency, low precision and high surface roughness are the main stumbling blocks for femtosecond laser processing of hard materials. So far, etching- assisted femtosecond laser modification has demonstrated to be the efficient strategy to solve the above problems when processing hard materials, including wet etching and dry etching. In this review, femtosecond laser modification that would influence the etching selectivity is introduced. The fundamental and recent applications of the two kinds of etching assisted femtosecond laser modification technologies are summarized. In addition, the challenges and application prospects of these technologies are discussed.