A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The devic...A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.展开更多
通过MOCVD和CVD生长技术,利用高Al组分Al Ga N和单层石墨烯材料进行纵向集成,成功制备了日盲紫外-近红外双色探测器。在工作温度为室温、调制频率为209 Hz以及工作电压分别为10 V和5 V的工作条件下,所制备的双色探测器在紫外波段263 nm...通过MOCVD和CVD生长技术,利用高Al组分Al Ga N和单层石墨烯材料进行纵向集成,成功制备了日盲紫外-近红外双色探测器。在工作温度为室温、调制频率为209 Hz以及工作电压分别为10 V和5 V的工作条件下,所制备的双色探测器在紫外波段263 nm处的响应度为5.9 m A/W,在近红外波段1.15μm处的响应度为0.67 m A/W,并且探测器的响应度均随着工作电压的增加而增大。展开更多
基金supported by the National Key Technology R&D Program of China(Grant Nos.2018YFA0209104 and 2016YFB0402403)
文摘A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.
文摘通过MOCVD和CVD生长技术,利用高Al组分Al Ga N和单层石墨烯材料进行纵向集成,成功制备了日盲紫外-近红外双色探测器。在工作温度为室温、调制频率为209 Hz以及工作电压分别为10 V和5 V的工作条件下,所制备的双色探测器在紫外波段263 nm处的响应度为5.9 m A/W,在近红外波段1.15μm处的响应度为0.67 m A/W,并且探测器的响应度均随着工作电压的增加而增大。
