High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on...High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.展开更多
Telecommunication networks will become IP based networks with all voice, data and multimedia traffic carried as packets with appropriate quality and class of service for each traffic type. It is very important fo...Telecommunication networks will become IP based networks with all voice, data and multimedia traffic carried as packets with appropriate quality and class of service for each traffic type. It is very important for service provider to apply Traffic Engineering ( TE ) with the dramatic growth of networks traffic. In this paper, we discuss traffic engineering based on IP/MPLS and emphasize traffic measurement in telecom core networks. We specify the technology and scientific principles of the measurement, modeling, characterization, and the traffic flow matrix. The paper concludes with a preliminary analysis of TE measurement and a discussion about the development of TE measurement.展开更多
GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in a...GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed.展开更多
基金Supported by the Chinese Academy of Sciences under Grant No 2010Y1JB6the National Basic Research Program of China under Grant No 2010CB923000the National Natural Science Foundation of China under Grant Nos 11234014 and 11227903
文摘High-quality superconducting FeSe0.5 Te0.5 films are epitaxiMly grown on different substrates by using the pulsed laser deposition method. By measuring the transport properties and surface morphology of films grown on single- crystal substrates of Al2O3 （0001）, SrTiO3 （001）, and MgO （001）, as well as monitoring the real-time growth process on MgO substrates with reflection high energy electron diffraction, we find the appropriate parameters for epitaxial growth of high-quality FeSe0.5 Te0.5 thin films suitable for angle-resolved photoemission spectroscopy measurements. We further report the angle-resolved photoemission spectroscopy characterization of the super- conducting films. The clearly resolved Fermi surfaces and the band structure suggest a sample quality that is as good as that of high-quality single-crystals, demonstrating that the pulsed laser deposition method can serve as a promising technique for in situ preparation and manipulation of iron-based superconducting thin films, which may bring new prosperity to angle-resolved photoemission spectroscopy research on iron-based superconductors.
文摘Telecommunication networks will become IP based networks with all voice, data and multimedia traffic carried as packets with appropriate quality and class of service for each traffic type. It is very important for service provider to apply Traffic Engineering ( TE ) with the dramatic growth of networks traffic. In this paper, we discuss traffic engineering based on IP/MPLS and emphasize traffic measurement in telecom core networks. We specify the technology and scientific principles of the measurement, modeling, characterization, and the traffic flow matrix. The paper concludes with a preliminary analysis of TE measurement and a discussion about the development of TE measurement.
基金Project supported by the National Natural Science Foundation of China(Nos.61474104,61504131)
文摘GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed.
