The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energ...The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.展开更多
基金supported by the Project of Combination of Production and Research Guided by Ministry in 2009,China (Grant No. 2009B090300338)the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163)the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong,China (Grant No. 2007A010501008)
文摘The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InA1N electron blocking layer (EBL) are studied. The emission spectra, carrier concentration in the quantum wells (QWs), energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.