In this paper,we give all-sided pastic analysis of the rectangular slab with three edges simply-supported and other free.Here we discuss the following four cases:(1)The uniformly distributedload over the area a slab.(...In this paper,we give all-sided pastic analysis of the rectangular slab with three edges simply-supported and other free.Here we discuss the following four cases:(1)The uniformly distributedload over the area a slab.(2).A concentrated load act at midpoint of free edges slab.(3)A concen-trated load act at the center a slab.(4)The line load act along free edge of slab.展开更多
Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle si...Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle size of semiconductor crystallites from X_ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength diraction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third_order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.展开更多
文摘In this paper,we give all-sided pastic analysis of the rectangular slab with three edges simply-supported and other free.Here we discuss the following four cases:(1)The uniformly distributedload over the area a slab.(2).A concentrated load act at midpoint of free edges slab.(3)A concen-trated load act at the center a slab.(4)The line load act along free edge of slab.
文摘Semiconductor(Zn\-\%x\%Cd 1-x S) doped silica glasses were prepared by Sol_Gel process and \%in situ\% growth technique. The structure of the materials was characterized by X_ray diffraction technique, the particle size of semiconductor crystallites from X_ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength diraction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third_order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.
