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A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression
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作者 吴孟 林峰 +1 位作者 杨富华 曹延名 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1686-1691,共6页
A Geiger mode planar InGaAs/InP avalanche photodiode (APD) with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced... A Geiger mode planar InGaAs/InP avalanche photodiode (APD) with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10^5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes. 展开更多
关键词 Geiger mode APD edge breakdown cascade junction breakdown voltage
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