The ultraviolet(UV) band edge photorefractivity of LiNbO_3:Zr at 325 nm has been investigated. The experimental results show that the resistance against photorefraction at 325 nm is quite obvious but not as strong as ...The ultraviolet(UV) band edge photorefractivity of LiNbO_3:Zr at 325 nm has been investigated. The experimental results show that the resistance against photorefraction at 325 nm is quite obvious but not as strong as that at 351 nm, when the doping concentration of Zr reaches 2.0 mol%. It is reported that the photorefractivity in other tetravalently doped LiNbO_3 crystals, such as LiNbO_3:Hf and Li NbO_3:Sn, is enhanced dramatically with doping concentration over threshold. Here we give an explicit explanation on such seemly conflicting behaviors of tetravalently doped LiNbO_3, which is ascribed to the combined effect of increased photoconductivity and the absorption strength of the band edge photorefractive centers.展开更多
基金supported by the Doctoral Foundation of Tianjin Normal University(No.135202XB1607)
文摘The ultraviolet(UV) band edge photorefractivity of LiNbO_3:Zr at 325 nm has been investigated. The experimental results show that the resistance against photorefraction at 325 nm is quite obvious but not as strong as that at 351 nm, when the doping concentration of Zr reaches 2.0 mol%. It is reported that the photorefractivity in other tetravalently doped LiNbO_3 crystals, such as LiNbO_3:Hf and Li NbO_3:Sn, is enhanced dramatically with doping concentration over threshold. Here we give an explicit explanation on such seemly conflicting behaviors of tetravalently doped LiNbO_3, which is ascribed to the combined effect of increased photoconductivity and the absorption strength of the band edge photorefractive centers.
