Edge detection of potential field interpretation is an important task. The traditional edge detection methods have poor ability in outlining weak amplitude anomalies clearly. The resolved edges position is blurred.We ...Edge detection of potential field interpretation is an important task. The traditional edge detection methods have poor ability in outlining weak amplitude anomalies clearly. The resolved edges position is blurred.We purposed new edge detection methods based on directional eigenvalues of potential field gradient tensor for the causative sources. In order to balance strong and weak amplitude anomalies simultaneously,we present one normalization method using different orders of vertical derivatives to improve the new filters. The presented filters were tested on synthetic and real potential field data to verify its feasibility. All of the results have shown that the new edge detection methods can not only display the sources edges precisely and clearly,but also bring out more geological subtle details.展开更多
A new low leakage 3×VDD-tolerant electrostatic discharge(ESD)detection circuit using only low-voltage device without deep N-well is proposed in a standard 90-nm 1.2-V CMOS process.Stacked-transistors technique is...A new low leakage 3×VDD-tolerant electrostatic discharge(ESD)detection circuit using only low-voltage device without deep N-well is proposed in a standard 90-nm 1.2-V CMOS process.Stacked-transistors technique is adopted to sustain high-voltage stress and reduce leakage current.No NMOSFET operates in high voltage range and it is unnecessary to use any deep N-well.The proposed detection circuit can generate a 38 mA current to turn on the substrate triggered silicon-controlled rectifier(STSCR)under the ESD stress.Under normal operating conditions,all the devices are free from over-stress voltage threat.The leakage current is 88 nA under 3×VDD bias at 25°C.The simulation result shows the circuit can be successfully used for 3×VDD-tolerant I/O buffer.展开更多
基金financially supported by Sino Probe-09-01 Grant No. 201311192Project 2014100 Supported by Graduate Innovation Fund of Jilin University
文摘Edge detection of potential field interpretation is an important task. The traditional edge detection methods have poor ability in outlining weak amplitude anomalies clearly. The resolved edges position is blurred.We purposed new edge detection methods based on directional eigenvalues of potential field gradient tensor for the causative sources. In order to balance strong and weak amplitude anomalies simultaneously,we present one normalization method using different orders of vertical derivatives to improve the new filters. The presented filters were tested on synthetic and real potential field data to verify its feasibility. All of the results have shown that the new edge detection methods can not only display the sources edges precisely and clearly,but also bring out more geological subtle details.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61076097,60936005)in part by Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China Program (Grant No. 20110203110012)
文摘A new low leakage 3×VDD-tolerant electrostatic discharge(ESD)detection circuit using only low-voltage device without deep N-well is proposed in a standard 90-nm 1.2-V CMOS process.Stacked-transistors technique is adopted to sustain high-voltage stress and reduce leakage current.No NMOSFET operates in high voltage range and it is unnecessary to use any deep N-well.The proposed detection circuit can generate a 38 mA current to turn on the substrate triggered silicon-controlled rectifier(STSCR)under the ESD stress.Under normal operating conditions,all the devices are free from over-stress voltage threat.The leakage current is 88 nA under 3×VDD bias at 25°C.The simulation result shows the circuit can be successfully used for 3×VDD-tolerant I/O buffer.
