Molecular properties and potential energy function model of BH under external electric field

Using the density functional B3P86/cc-PV5Z method, the geometric structure of BH molecule under different external electric fields is optimized, and the bond lengths, dipole moments, vibration frequencies, and other physical properties parameters are obtained. On the basis of setting appropriate parameters, scanning single point energies are obtained by the same method and the potential energy curves under different external fields are also obtained. These results show that the physical property parameters and potential energy curves may change with external electric field, especially in the case of reverse direction electric field. The potential energy function without external electric field is fitted by Morse potential, and the fitting parameters are obtained which are in good agreement with experimental values. In order to obtain the critical dissociation electric parameter, the dipole approximation is adopted to construct a potential model fitting the corresponding potential energy curve of the external electric field. It is found that the fitted critical dissociation electric parameter is consistent with numerical calculation, so that the constructed model is reliable and accurate. These results will provide important theoretical and experimental reference for further studying the molecular spectrum, dynamics, and molecular cooling with Stark effect.

Air breakdown induced by the microwave with two mutually orthogonal and heterophase electric field components

The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.

Research on the field emission mechanism of nano-structured carbon film

The field emission （FE） characteristics of nano-structured carbon films （NSCFs） are investigated. The saturation behaviour of the field emission current density found at high electric field E cannot be reasonably explained by the traditional Fowler-Nordheim （F-N） theory. A three-region E model and the curve-fitting method are utilized for discussing the FE characteristics of NSCFs. In the low, high, and middle E regions, the FE mechanism is reasonably explained by a modified F-N model, a corrected space-charge-limited-current （SCLC） model and the joint model of F N and SCLC mechanism, respectively. Moreover, the measured FE data accord well with the results from our corrected theoretical model.

Analytical modeling and simulation of germanium single gate silicon on insulator TFET

This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.