Flexible and Robust Functionalized Boron Nitride/Poly(p‑Phenylene Benzobisoxazole)Nanocomposite Paper with High Thermal Conductivity and Outstanding Electrical Insulation

With the rapid development of 5G information technology,thermal conductivity/dissipation problems of highly integrated electronic devices and electrical equipment are becoming prominent.In this work,“high-temperature solid-phase&diazonium salt decomposition”method is carried out to prepare benzidine-functionalized boron nitride(m-BN).Subsequently,m-BN/poly(pphenylene benzobisoxazole)nanofiber(PNF)nanocomposite paper with nacremimetic layered structures is prepared via sol–gel film transformation approach.The obtained m-BN/PNF nanocomposite paper with 50 wt%m-BN presents excellent thermal conductivity,incredible electrical insulation,outstanding mechanical properties and thermal stability,due to the construction of extensive hydrogen bonds andπ–πinteractions between m-BN and PNF,and stable nacre-mimetic layered structures.Itsλ∥andλ_(⊥)are 9.68 and 0.84 W m^(-1)K^(-1),and the volume resistivity and breakdown strength are as high as 2.3×10^(15)Ωcm and 324.2 kV mm^(-1),respectively.Besides,it also presents extremely high tensile strength of 193.6 MPa and thermal decomposition temperature of 640°C,showing a broad application prospect in high-end thermal management fields such as electronic devices and electrical equipment.

A layered multifunctional framework based on polyacrylonitrile and MOF derivatives for stable lithium metal anode

Composite Li metal anodes based on three-dimensional(3D) porous frameworks have been considered as an effective material for achieving stable Li metal batteries with high energy density.However,uneven Li deposition behavior still occurs at the top of 3D frameworks owing to the local accumulation of Li ions.To promote uniform Li deposition without top dendrite growth,herein,a layered multifunctional framework based on oxidation-treated polyacrylonitrile(OPAN) and metal-organic framework(MOF) derivatives was proposed for rationally regulating the distribution of Li ions flux,nucleation sites,and electrical conductivity.Profiting from these merits,the OPAN/carbon nano fiber-MOF(CMOF) composite framework demonstrated a reversible Li plating/stripping behavior for 500 cycles with a stable Coulombic efficiency of around 99.0% at the current density of 2 mA/cm~2.Besides,such a Li composite anode exhibited a superior cycle lifespan of over 1300 h under a low polarized voltage of 18 mV in symmetrical cells.When the Li composite anode was paired with LiFePO_(4)(LFP) cathode,the obtained full cell exhibited a stable cycling over 500 cycles.Moreover,the COMSOL Multiphysics simulation was conducted to reveal the effects on homogeneous Li ions distribution derived from the above-mentioned OPAN/CMOF framework and electrical insulation/conduction design.These electrochemical and simulated results shed light on the difficulties of designing stable and safe Li metal anode via optimizing the 3D frameworks.

Preparation of Poly(p-phenylene sulfide)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

The present work enhanced the thermal conductivity of poly（p-phenylene sulfide）/expanded graphites and poly（p-phenylene sulfide）/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbon fillers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

高压直流换流站穿墙套管的局部放电在线测量(英文)

An online partial discharge(PD) measurement performed on a high voltage direct current(HVDC) wall bushing successfully identified the presence of internal discharges.The wall bushing is a sulfur hexafluoride gas-insulated bushing,rated for 500 kV dc and terminated on a thyristor-controlled HVDC converter bridge.The measurement of PD within the HVDC station environment is particularly challenging due to the high levels of electromagnetic noise caused by thyristor switching events and external air-corona from the neighboring high-voltage equipment.An additional challenge is the""mixed"voltage stress on the bushing insulation,which has both ac and dc high-voltage components.There are also fast transients during the firing of thyristors in the HVDC conversion process that cause added stress to the insulation.As a result,the analysis and interpretation of PD data for HVDC equipment is more complex;PD pulses may occur in response to the ac,dc,or switching transient voltage stresses.In this paper,an online PD measurement strategy for noise filtering and isolation of PD sources within the bushing are discussed.The PD measurement data is plotted on a phase-resolved diagram where the line supply power cord voltage was used as a reference. The phase-resolved diagram appears to suggest that the fast transients,caused during switching,trigger some PD events.Measurements were also performed with the aid of a modern PD measurement instrument having noise separation capabilities.The findings from the online PD measurements are verified with physical evidence,found after the bushing was removed from service,suggested internal PD had occurred inside the bushing.

Improved Electrical Insulation of Rare Earth Permanent Magnetic Materials With High Magnetic Properties

Rare earth permanent magnetic materials are typical electrical conductor, and their magnetic properties will decrease because of the eddy current effect, so it is difficult to keep them stable for a long enough time under a high frequency AC field. In the present study, as far as rare earth permanent magnets are concerned, for the first time, rare earth permanent magnets with strong electrical insulation and high magnetic performance have been obtained through experiments, and their properties are as follows： （i） Sm1 TM17 ： Br=0. 62 T, jHc=803.7 kA/m, （BH）m= 58.97 kJ/m^3, p=7 Ω· m; （2） NdFeB： Br=0.485 T, jHc=766.33 kA/m, （BH）m=37.96 kJ/m^3, ρ=Ω · m. The magnetic properties of Sm2TM17 and NdFeB are obviously higher than those of ferrite permanent magnet, and the electric insulating characteristics of Sm2TM17 and NdFeB applied have in fact been approximately the same as those of ferrite. Therefore, Sm2TM17 and NdFeB will possess the ability to take the place of ferrite under a certain high frequency AC electric field.

BiAlO_(3)-modified BiFeO_(3)-BaTiO_(3) high Curie temperature lead-free piezoelectric ceramics with enhanced performance

BiFeO_(3)-BaTiO_(3)(BF-BT)lead-free piezoelectric ceramics have high piezoelectricity and high Curie temperature(T_(C)),but the mixed-valence Fe ions and Bi^(3+)volatilization would promote the formation of Bi_(25)FeO_(40)/Bi_(2)Fe_(4)O_9 and oxygen vacancy,which greatly degrade the insulation properties required for polarization.In this study,it was found that the modification of BiAlO_(3)(BA)in BF-BT ceramics could effectively solve these problems,reducing the leakage current to 1×10^(-9)A·cm^(-2)and transiting the space charge-limited conduction to ohmic conduction.Because of the enhanced insulation properties and appropriate rhombohedral-pseudocubic phase ratio(C_R/C_(PC)),BF-BT-xBA ceramics in an optimized composition obtain enhanced piezoelectric performance:piezoelectric charge coefficient(d_(33))=196 pC·N^(-1),planar electromechanical coupling coefficient(k_(p))=31.1%,T_(C)=487℃and depolarization temperature(T_d)=250°C;unipolar strain(S_(uni))=0.17%and piezoelectric strain coefficient(d_(33)^(*))=335 pm·V^(-1)at 100℃.Especially,d_(33)exceeds 283 pC·N^(-1)at 233℃and d_(33)^(*)is 335 pm·V^(-1)at100℃,showing an excellent high-temperature piezoelectricity and high depolarization temperature.The results are attributed to the domain structure of rhombohedral-pseudocubic phase coexistence and its high-temperature switching behavior.This work provides a feasible and effective approach to improve the high temperature piezoelectric properties of BF-BT-xBA ceramics,making them more suitable for high temperature applications.

Degradation of PAI/PEI Enamel under High Temperature (Up to 400°C)

This work deals with the understanding of the degradation of the primary insulation (PEI/PAI) of rotating machines working temporarily under high-temperature. The main domain of application of these motors is the smoke extraction either from tunnels or underground parking when a fire occurs. In such a critical situation, the internal temperature of the motor winding may reach temperatures up to 400°C. Under such very high thermal stresses, the behaviour of the electrical insulation is not well understood. This work proposes an analysis of the decomposition gases under very high temperatures and the corresponding degradation pathway. A simple method is proposed to identify whether the insulation of such motors has been strongly damaged during the working time at very high temperatures, thus allowing estimating if it can still continue to operate.

Tuning F-doped degree of rGO:Restraining corrosion-promotion activity of EP/rGO nanocomposite coating

Given that graphene features high electrical conductivity,it is a kind of material with corrosion-promotion activity.This study aimed to inhibit the corrosion-promotion activity of graphene in coatings.Here,we report an exciting application of epoxy matrix(EP)/F-doped reduced graphene oxide(rGO)coatings for the long-term corrosion protection of steel.The synthesized F-doped rGO(FG)did not reduce the utilization of rGO by a wide margin and possessed distinctive electrically insulating nature.The electrical conductivity of rGO was approximately 1500 S/m,whereas those of FG-1,FG-2 and FG-3 were 1.17,5.217×10^−2 and 3.643×10^-11 S/m,respectively.FG and rGO were then dispersed into epoxy coatings.The chemical structures of rGO and FG were investigated by transmission electron microscopy(TEM),scanning probe microscopy(SPM),X-ray photoelectron spectroscopy(XPS),Fourier-transform infrared spectroscopy(FTIR),and X-ray diffraction(XRD).EP/FG coatings exhibited outstanding corrosion protection in comparison with blank EP and EP/rGO coatings mainly because the corrosion-promotion effect of rGO was eliminated.The anticorrosion ability of EP/FG coatingswasimproved with increased F-doped degree of FG.In addition,electrochemical impendance spectroscopy(EIS)results indicated that the Rc values of EP/FG-2 and EP/FG-3 were four orders of magnitude higher than those of EP/rGO in diluent NaCl solution(3.5 wt.%)after immersion for 90 days.

Tunable Rashba spin splitting in quantum-spin Hall- insulator AsF bilayers

Rashba spin splitting （RSS） in quantum-spin Hall （QSH） insulators is of special importance for fabricating spintronic devices. By changing the stacking order, a unique bilayered fluorinated arsenene （AsF） system is demonstrated to simultaneously possess RSS and non-trivial topological electronic states. We show by first-principle calculations that tunable RSS can be realized in bilayered AsF. Intrinsic RSS of 25 meV is obtained in the AA-stacked AsF bilayer by considering the spin-orbit coupling effect. The RSS can be tuned in the range of 0 to 50 meV by applying biaxial strains and can be significantly enhanced up to 186 meV in the presence of an external electric field. The AB-stacked AsF bilayer is shown to be a two-dimensional topological insulator with a sizable bulk bandgap of 140 meV （up to 240 meV）, which originates from the spin-orbit coupling within the p~,y-pz band inversion. Surprisingly, RSS up to 295 meV can be induced in the AB-stacked AsF bilayer by applying an external electric field, while the robust topology property without RSS can be retained under the applied strains. The AsF bilayers with tunable RSS and a nontrivial bandgap with AA- and AB-stacking orders can pave the way for designing spin field-effect transistors and new QSH devices.