Electric luminescence and its circular polarization in a Co2 MnAl injector-based light emitting diode （LED） has been detected at the transition of e–A0 C , where injected spin-polarized electrons recombine with bou...Electric luminescence and its circular polarization in a Co2 MnAl injector-based light emitting diode （LED） has been detected at the transition of e–A0 C , where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p ＋ -GaAs layer. The large volume of the p ＋ -GaAs layer can facilitate the detection of weak electric luminescence （EL） from e–A 0C emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p＋ -GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron–hole exchange scattering （BAP mechanism）, the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.展开更多
基金Project supported by the National Basic Research Program of China (Grant No. 2011CB932901)the National Natural Science Foundation of China (GrantNo. 60836002)
文摘Electric luminescence and its circular polarization in a Co2 MnAl injector-based light emitting diode （LED） has been detected at the transition of e–A0 C , where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p ＋ -GaAs layer. The large volume of the p ＋ -GaAs layer can facilitate the detection of weak electric luminescence （EL） from e–A 0C emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p＋ -GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron–hole exchange scattering （BAP mechanism）, the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.
