Size effects on electrical properties of sol–gel grown chromium doped zinc oxide nanoparticles

In this communication, we report the results of the studies on electrical properties of Zn0.95Cr0.05O nanoparticles synthesized using sol-gel method. X-ray diffraction （XRD） and transmission electron microscopy （TEM） measurements were performed for the structural and microstructural behaviors of the nanoparticles. Rietveld analysis was carried out to confirm the single phasic nature. High resolution TEM （HRTEM） confirms the nanoscale nature and polycrystalline orientations in the samples. Dielectric response has been understood in the context of universal dielectric response （UDR） model along with the Koop＇s theory and Maxwell - Wagner （M-W） mechanism. Variation in ac conductivity with frequency has been discussed in detail in terms of power law fits. Results of the impedance measurements have been explained on the basis of crystal cores and crystal boundary density. Cole - cole behavior has been studied for the impedance data. For potential application of nanoparticles, average normalized change （ANC） in impedance has been estimated and discussed in the light of size effects and oxygen vacancies.

The effect of Bi composition on the electrical properties of InP1-xBix

III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0.93 eV（C-V） and 0.87 eV（I-V）/1.03 eV（C-V）. However, the BH rises to 0.99 eV（I-V）/1.18 eV（C-V）and then slightly deceases to 0.92 eV（I-V）/1.03 eV（C-V） after annealing at 300 ℃ and 400 ℃. The utmost BH is attained after annealing at 300 ℃ and thus the optimum annealing for SBD is 300 ℃. By applying Cheung＇s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung＇s and ΨS-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the NSS decreases up to 300 ℃ annealing and then slightly increases after annealing at 400 ℃. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.