We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stab...We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.展开更多
The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an el...The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse- induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.展开更多
Nd1-xSrxMnO3 （x ： 0.3, 0.5） ceramics containing a secondary phase are synthesized by high-energy ball milling and post heat-treatment method. The 4-wire and 2-wire measuring modes are used to investigate the transp...Nd1-xSrxMnO3 （x ： 0.3, 0.5） ceramics containing a secondary phase are synthesized by high-energy ball milling and post heat-treatment method. The 4-wire and 2-wire measuring modes are used to investigate the transport character of the grain/phase boundary （inner interface） and electrode-bulk interface （outer interface）, respectively, and the results indicate that there is a similar nonlinear I-V behaviour for both of the inner and outer interfaces, however, the electric pulse induced resistance change （EPIR） effect can only be observed at the outer interface.展开更多
基金Project supported by the National Basic Research Program of China (Grant No. 2007CB925002)the National High Technology Research and Development Program of China (Grant No. 2008AA031401)and Chinese Academy of Sciences
文摘We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
基金Project supported by NASA,the State of Texas through the Center for Advanced Materials,Sharp Laboratories of America,Semiconductor Research Corporation,the R.A.Welch Foundation (Grant No.#E-632)the National Natural Science Foundation of China (Grant No.11074109)+2 种基金the Natural Science Foundation of Jiangsu Province of China (Grant No.SBK200920627)the National Basic Research Program of China (Grant No.2010CB923404)the National "Climbing" Program of China (Grant No.91021003)
文摘The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse- induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.
基金the Project of Hubei Polytechnic University (No.12xjz01R)The Natural Science Foundation of Hubei Province(No.2012FFB01001)the Program of Ministry of Education of China(for New Century Excellent Talents in University, No.NCET-08-0674)for their financial supports
文摘Nd1-xSrxMnO3 （x ： 0.3, 0.5） ceramics containing a secondary phase are synthesized by high-energy ball milling and post heat-treatment method. The 4-wire and 2-wire measuring modes are used to investigate the transport character of the grain/phase boundary （inner interface） and electrode-bulk interface （outer interface）, respectively, and the results indicate that there is a similar nonlinear I-V behaviour for both of the inner and outer interfaces, however, the electric pulse induced resistance change （EPIR） effect can only be observed at the outer interface.
