The Mechanical and Electrical Properties of the Smart Aggregate Based on the Mixed Cementitious Materials

Cement and resin were designed as mixed cementitious materials to study the smart aggregate(SA)of smart concrete.Carbon fiber(CF)and surfactant were taken into consideration to adjust the mechanical and electrical properties of smart aggregate(SA)in this issue.The experimental results indicate that the flexibility and mechanical properties of SA can be improved by using such mixed cementitious materials.It is shows that,although the compressive strength and flexural strength can be enhanced effectively by using resin and CF,the electrical conductivity decreases significantly,which is because the water molecules are difficult to penetrate through the mixture materials so the hydration reaction of cement can not fully carry out.However,the electrical conductivity can be improved by adding the surfactant,and the strength and mechanical electrical properties can be adjusted effectively by the surfactant.

Electronic properties of 2D materials and their junctions

With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensively analyzed.The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions.The preferred orientation is the(111)direction.The grain size increases from 16−23 nm to 21−47 nm,by~70%on average.Comparing with other reported films,Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration(>10^(20)cm^(−3))and higher carrier mobility(>30 cm2/(V·s)).The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size.Heavy doping property is proved by the mean sheet resistance(Rsheet,m)and distribution profile.The R_(sheet,m)decreases by more than 30%,and it can be further decreased by 90%if the annealing temperature or duration is increased.The boron concentration of ATT-pPoly film annealed at 950℃ for 45 min is~3×10^(20)cm^(−3),and the distribution is nearly the same,except near the surface.Besides,the standard deviation coefficient(σ)of Rsheet,m is less than 5.0%,which verifies the excellent uniformity of ATT-pPoly film.

Achieving Synergistic Improvement in Dielectric and Energy Storage Properties of All-Organic Poly(Methyl Methacrylate)-Based Copolymers Via Establishing Charge Traps

How to achieve synergistic improvement of permittivity(ε_(r))and breakdown strength(E_(b))is a huge challenge for polymer dielectrics.Here,for the first time,theπ-conjugated comonomer(MHT)can simultaneously promote theε_(r)and E_(b)of linear poly(methyl methacrylate)(PMMA)copolymers.The PMMA-based random copolymer films(P(MMA-co-MHT)),block copolymer films(PMMA-b-PMHT),and PMMA-based blend films were prepared to investigate the effects of sequential structure,phase separation structure,and modification method on dielectric and energy storage properties of PMMA-based dielectric films.As a result,the random copolymer P(MMA-coMHT)can achieve a maximumε_(r)of 5.8 at 1 kHz owing to the enhanced orientation polarization and electron polarization.Because electron injection and charge transfer are limited by the strong electrostatic attraction ofπ-conjugated benzophenanthrene group analyzed by the density functional theory(DFT),the discharge energy density value of P(MMA-co-PMHT)containing 1 mol%MHT units with the efficiency of 80%reaches15.00 J cm^(-3)at 872 MV m^(-1),which is 165%higher than that of pure PMMA.This study provides a simple and effective way to fabricate the high performance of polymer dielectrics via copolymerization with the monomer of P-type semi-conductive polymer.

Ultrahigh thermoelectric properties of p‐type Bi_(x)Sb_(2−x)Te_(3) thin films with exceptional flexibility for wearable energy harvesting

Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.

Effects of preparation parameters on growth and properties of β-Ga_(2)O_(3) film

The Ga_(2)O_(3) films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters(such as argon–oxygen flow ratio, sputtering power, sputtering time and annealing temperature)on the growth and properties(e.g., surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer(XRD), scanning electron microscope(SEM), and ultraviolet-visible spectrophotometer(UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the β-Ga_(2)O_(3) film are influenced by those parameters. All β-Ga_(2)O_(3) films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The I–V curves show that the Ohmic behavior between metal and β-Ga_(2)O_(3) films is obtained at 900℃. Those results will be helpful for the further research of β-Ga_(2)O_(3) photoelectric semiconductor.

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study.22 nm p^(+)-GaN followed by 2 nm p-In_(0.2)Ga_(0.8)N was grown on p-type layers by metal-organic chemical vapor deposition.Samples were then cut into squares after annealing and contact electrodes using In balls were put at the corners of the squares.Good linearity between all the electrodes was confirmed inⅠ–Ⅴcurves during Hall measurements even with In metal.Serval samples taken from the same wafer showed small standard deviation of~4%for resistivity,Hall mobility and hole concentration.The influence of contact layer on the electrical characteristics of bulk p-type layers was then investigated by step etching technique using inductively coupled plasma etching and subsequent Hall-effect measurements.Identical values could be obtained consistently when a 28 nm non-conductive layer thickness at the surface was taken into account.Therefore,the procedures for evaluating the electrical properties of GaN-based p-type layers just using In balls proposed in this study are shown to be quick and useful as for the other conventionalⅢ–Ⅴmaterials.

Preparation of Fluorine-free MXene Ti_(3)C_(2)T_(x) and Its Electrical Properties

The fluorine-free MXene was prepared by Lewis acid salt etching of ternary layered ceramic MAX phase material.The structure of fluorine-free MXene was characterized by scanning electron microscopy(SEM)and X-ray diffractometry(XRD).The study finds that the layer spacing of fluorine-free MXene is approximately twice that of MXene etched by the liquid-phase method,compared to the conventional liquidphase method.It also has greater capacitive properties.Therefore,the MXene prepared by this method shows a great potential for application in the field of capacitors.

Exploring heteroepitaxial growth and electrical properties of α-Ga_(2)O_(3) films on differently oriented sapphire substrates

This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction and Raman spectroscopy, and elucidate thin film epitaxial relationships with the underlying sapphire substrates. The oxygen vacancy concentration of α-Ga_(2)O_(3) thin films on m-plane and r-plane sapphire substrates are higher than α-Ga_(2)O_(3) thin film on a-plane sapphire substrates. All three thin films have a high transmission of over 80% in the visible and near-ultraviolet regions, and their optical bandgaps stay around 5.02–5.16 eV. Hall measurements show that the α-Ga_(2)O_(3) thin film grown on r-plane sapphire has the highest conductivity of 2.71 S/cm, which is at least 90 times higher than the film on a-plane sapphire. A similar orientation-dependence is seen in their activation energy as revealed by temperature-dependent conductivity measurements, with 0.266, 0.079, and 0.075eV for the film on a-, m-, r-plane, respectively. The origin of the distinct transport behavior of films on differently oriented substrates is suggested to relate with the distinct evolution of oxygen vacancies at differently oriented substrates. This study provides insights for the substrate selection when growing α-Ga_(2)O_(3) films with tunable transport properties.

Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

In this paper,the interactions between the transverse loads and the electrical field quantities are investigated based on the nonlinear constitutive relation.By considering a composite beam consisting of a piezoelectric semiconductor and elastic layers,the nonlinear model is established based on the phenomenological theory and Euler’s beam theory.Furthermore,an iteration procedure based on the differential quadrature method(DQM)is developed to solve the nonlinear governing equations.Before analysis,the convergence and correctness are surveyed.It is found that the convergence of the proposed iteration is fast.Then,the transverse pressure induced electrical field quantities are investigated in detail.From the calculated results,it can be found that the consideration of nonlinear constitutive relation is necessary for a beam undergoing a large load.Compared with the linear results,the consideration of the nonlinear constitutive relation breaks the symmetry for the electric potential,the electric field,and the perturbation carrier density,and has little influence on the electric displacement.Furthermore,the non-uniform pressures are considered.The results show that the distributions of the electric field quantities are sensitively altered.It indicates that the electrical properties can be manipulated with the design of different transverse loads.The conclusions in this paper could be the guidance on designing and manufacturing electronic devices accurately.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Electrochemical anodic oxidation assisted fabrication of memristors

Owing to the advantages of simple structure,low power consumption and high-density integration,memristors or memristive devices are attracting increasing attention in the fields such as next generation non-volatile memories,neuromorphic computation and data encryption.However,the deposition of memristive films often requires expensive equipment,strict vacuum conditions,high energy consumption,and extended processing times.In contrast,electrochemical anodizing can produce metal oxide films quickly(e.g.10 s) under ambient conditions.By means of the anodizing technique,oxide films,oxide nanotubes,nanowires and nanodots can be fabricated to prepare memristors.Oxide film thickness,nanostructures,defect concentrations,etc,can be varied to regulate device performances by adjusting oxidation parameters such as voltage,current and time.Thus memristors fabricated by the anodic oxidation technique can achieve high device consistency,low variation,and ultrahigh yield rate.This article provides a comprehensive review of the research progress in the field of anodic oxidation assisted fabrication of memristors.Firstly,the principle of anodic oxidation is introduced;then,different types of memristors produced by anodic oxidation and their applications are presented;finally,features and challenges of anodic oxidation for memristor production are elaborated.

Crystallization kinetics and temperature dependence of energy storage properties of niobate glass-ceramics

Glass-ceramic materials of strontium barium niobate system were prepared through a melt-quenching method. The effects of crystallization temperature on the mierostructure, dielectric property, breakdown strength and energy storage density of barium strontium niobate glass-ceramics were studied. The crystallization mechanism of the glass-ceramics was discussed and should be one-dimensional interfacial growth. The results indicate that the breakdown strength remarkably increases with the increase of crystallization temperature. The glass-ceramic heat treated at 900 ℃ was found to possess optimal properties with breakdown strength of 1300 kV/cm and energy storage density of 2.8 J/cm3, which is promising dielectric materials for high energy storage density dielectrics.

Multifunctional HDPE/Cu biocidal nanocomposites for MEX additive manufactured parts: Perspectives for the defense industry

In this study, we investigated the performance improvement caused by the addition of copper(Cu)nanoparticles to high-density polyethylene(HDPE) matrix material. Composite materials, with filler percentages of 0.0, 2.0, 4.0, 6.0, 8.0, and 10.0 wt% were synthesized through the material extrusion(MEX)3D printing technique. The synthesized nanocomposite filaments were utilized for the manufacturing of specimens suitable for the experimental procedure that followed. Hence, we were able to systematically investigate their tensile, flexural, impact, and microhardness properties through various mechanical tests that were conducted according to the corresponding standards. Broadband Dielectric Spectroscopy was used to investigate the electrical/dielectric properties of the composites. Moreover, by employing means of Raman spectroscopy and thermogravimetric analysis(TGA) we were also able to further investigate their vibrational, structural, and thermal properties. Concomitantly, means of scanning electron microscopy(SEM), as well as atomic force microscopy(AFM), were used for the examination of the morphological and structural characteristics of the synthesized specimens, while energy-dispersive Xray spectroscopy(EDS) was also performed in order to receive a more detailed picture on the structural characteristics of the various synthesized composites. The corresponding nanomaterials were also assessed for their antibacterial properties regarding Staphylococcus aureus(S. aureus) and Escherichia coli(E. coli) with the assistance of a method named screening agar well diffusion. The results showed that the mechanical properties of HDPE benefited from the utilization of Cu as a filler, as they showed a notable improvement. The specimen of HDPE/Cu 4.0 wt% was the one that presented the highest levels of reinforcement in four out of the seven tested mechanical properties(for example, it exhibited a 36.7%improvement in the flexural strength, compared to the pure matrix). At the same time, the nanocomposites were efficient against the S. aureus bacterium and less efficient against the E. coli bacterium.The use of such multi-functional, robust nanocomposites in MEX 3D printing is positively impacting applications in various fields, most notably in the defense and security sectors. The latter becomes increasingly important if one takes into account that most firearms encompass various polymeric parts that require robustness and improved mechanical properties, while at the same time keeping the risk of spreading various infectious microorganisms at a bare minimum.

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

Investigation on the Novel High-performance Copper/Graphene Composite Conductor for High Power Density Motor

High-performance Cu/Graphene composite wire synergistically strengthened by nano Cr_(3)C_(2) phase was directly synthesized via hot press sintering followed by severe cold plastic deformation, using liquid paraffin and CuCr alloy powder as the raw materials. Since graphene is in situ formed under the catalysis of copper powder during the sintering process, the problem that graphene is easy to agglomerate and difficult to disperse uniformly in the copper matrix has been solved. The nano Cr_(3)C_(2)-particles nailed at the interface favor to improve the interface bonding. The Cu/Graphene composite possesses high electrical conductivity, hardness, and plasticity. The composite wire exhibits high electrical conductivity of 96.93% IACS, great tensile strength of 488MPa, and excellent resistance to softening. Even after annealing at 400℃ for 1 h, the tensile strength can still reach 268 MPa with a conductivity of about 99.14% IACS.The wire's temperature coefficient of resistance(TCR) is largely reduced to 0.0035/℃ due to the complex structure,which leads the wire to present low resistivity at higher temperatures. Such Cu/Graphene composite wire with excellent comprehensive performance has a good application prospect in high-power density motors.

Preparation and Anti⁃arc Erosion Property of Ag Matrix Electrical Contact Material Reinforced by Novel Ti_(2)Cd

Due to their outstanding electrical contact properties,Cd-containing silver-matrix electrical contact materials can meet the requirements of high stability and long life for military defense and aerospace applications.In order to further reduce the Cd content under the premise of meeting the high-performance requirements,in this study,high-purity intermediate Ti_(2)Cd powder of MAX phase(Ti_(2)CdC)was synthesized with a pressureless technique and then applied to reinforce the Ag matrix.The Cd content of the as-prepared Ag/Ti_(2)Cd composites was actually reduced by 38.31%compared with conventional Ag/CdO material.Based on the systematic study of the effect of heat treatment temperature on the physical phase,morphology,interface and comprehensive physical properties of Ag/Ti_(2)Cd composites,the preferred samples(heat treated at 400°C for 1 h)showed high density(97.77%),low resistivity(2.34μΩ·cm),moderate hardness(90.8HV),high tensile strength(189.9 MPa),and exhibited good electrical contact performance after 40000 cycles of arc discharging under severe conditions(DC 28 V/20 A).The results of microscopic morphological evolution,phase change and elemental distribution of the electrical contact surface show that the combination of high stability of Ti_(2)Cd reinforcing phase,good interfacial bonding with Ag matrix and improved melt pool viscosity in the primary stage of arc erosion,results in low and stable contact resistance(average value 13.20 mΩ)and welding force(average value 0.6 N),low fluctuation of static force(2.2-2.5 N).The decomposition and absorption energy of Ti_(2)Cd and the arc extinguishing effect of Cd vapor are the main reasons for the stable arcing energy and arcing time of electric contacts in the late stage of arc erosion.

Effect of Ba_(0.5)Bi_(0.5)Fe_(0.9)Sn_(0.1)O_3 addition on electrical properties of BaCo_(0.02)~ⅡCo_(0.04)~ⅢBi_(0.94)O_3 thick-film thermistors

Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.

First Principle Study on the Magnetic and Electric Properties of Wurtzite Cr-phosphides and Cr-sulphides： Several Half-metallic Ferromagnets

The geometrical structures of wurtzite CrX （X=As, Sb, O, Se, and Te） were optimized, then their electric and magnetic properties were investigated by the first-principle calculations within the generalized gradient approximation for the exchange-correlation functional based on the density functional theory. These Cr-phosphides and Cr-sulphides were predicted to be half-metallic ferromagnets whose spin-polarization at the Fermi level is absolutely 100%. The molecular magnetic moments of Cr-phosphides and Cr-sulphides are 3.00 and 4.00 μB, which arise mainly from Cr-ions, respectively. There is ferromagnetic coupling in both Cr- phosphides and Cr-sulphides. The Curie temperatures of Cr-sulphides and Cr-phosphides are high. The electronic structures of Cr-ions are a1g^2↑↓t1u^4↑↓t1u^1↑↓eg^2↑↓in Cr-phosphides and a1g^2↑↓t1u^4↑↓t1u^1↑t2g^3↑in Cr-sulphides, respectively.

Effect of SiO_2 addition on the microstructure and electrical properties of ZnO-based varistors

The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.