Trench型N-Channel MOSFET低剂量率效应研究

基于抗辐射100V Trench型N-Channel MOSFET开展了不同剂量率的总剂量辐射实验并进行了分析,创新性提出了器件随低剂量率累积以及不同偏置状态下的变化趋势和机理,给出了器件实验前后的转移曲线和直流参数,进行了二维数值仿真比较,证明了实验和仿真的一致性。研究表明:随高剂量率的剂量增加,器件阈值电压(V_(TH))发生了明显负向漂移现象,导通电阻(R_(DSON))出现5%左右的降低,击穿电压(BV_(DS))保持基本不变;低剂量率下总剂量效应与高剂量率有明显不同,阈值电压漂移量减小,同时出现正向漂移现象;此时导通电阻(R_(DSON))和击穿电压(BV_(DS))较高剂量率变化量进一步下降。研究认为,低剂量率下器件界面缺陷电荷增加变多,使得阈值电压的漂移方向发生改变,同时低剂量率实验周期是高剂量率的500倍,退火效应也较高剂量率的明显,导致器件参数辐射前后差异性减小。

Submarine Trenches and Wave-Wave Interactions Enhance the Sediment Resuspension Induced by Internal Solitary Waves

Internal solitary waves(ISWs)are nonlinear fluctuations in nature that could cause significant interactions between seawater and the seabed.ISWs have been proven to be an adequate cause of sediment resuspension in shallow and deep-sea environments.In the South China Sea,ISWs have the largest amplitude globally and directly interact with the seabed near the Dongsha slope in the northern South China Sea.We analyzed the water profile and high-resolution multibeam bathymetric data near the Dongsha slope and revealed that submarine trenches have a significant impact on the sediment resuspension by ISWs.Moreover,ISWs in the zone of the wave-wave interaction enhanced sediment mixing and resuspension.The concentration of the suspended particulate matter inside submarine trenches was significantly higher than that outside them.The concentration of the suspended particulate matter near the bottoms of trenches could be double that outside them and formed a vast bottom nepheloid layer.Trenches could increase the concentration of the suspended particulate matter in the entire water column,and a water column with a high concentration of the suspended particulate matter was formed above the trench.ISWs in the wave-wave interaction zone near Dongsha could induce twice the concentration of the bottom nepheloid layer than those in other areas.The sediment resuspension caused by ISWs is a widespread occurrence all around the world.The findings of this study can offer new insights into the influence of submarine trench and wave-wave interaction on sediment resuspension and help in geohazard assessment.

The Origins of the Arc-Shaped Langshan Uplift and Linhe Trench

In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained. This article comprehensively analyzes the research achievements over the past 40 years of geology, geomorphology, seismic exploration, paleogeography, and oil and gas exploration in the Ordos Basin and Langshan. It recognizes that the northern part of the Ordos Basin experienced a meteorite impact in the Late Cretaceous period. The impact pushed the block northwest ward, subducting after colliding with igneous rocks in the north. This sudden event formed a clear arc-shaped mountain zone in the north and a wedge-shaped trench in front of the mountain. The chaotic layers, prolonged and continuous faults, and numerous thrust layers in the Langshan, a negative anomaly area in the center of the northern Ordos, abnormal orientation of crystalline basement structures in the north of Ordos, Moho uplift, and distribution of meteorite fragments in the northwest of Langshan, all of these geological phenomena support the occurrence of the meteorite impact event, forming the arc-shaped Langshan and the Trench.

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.

一种抗辐射Trench型N 30 V MOSFET器件设计

由于Trench结构在降低元胞单元尺寸、提升沟道密度和消除JFET区电阻等方面的优势,Trench型MOSFET已广泛应用于低压产品领域。在研究抗辐射机理和抗辐射加固技术的基础上,设计了一款新型抗辐射Trench型N30VMOSFET器件。实验结果显示,产品击穿电压典型值达42V,特征导通电阻为51mΩ·mm^(2)。在^(60)Co γ射线100krad(Si)条件下,器件阈值电压漂移仅为-0.3V,漏源漏电流从34nA仅上升到60nA。采用能量为2006MeV、硅中射程为116μm、线性能量传输(LET)值为75.4MeV·cm^(2)/mg的^(118)Ta离子垂直入射该器件,未发生单粒子事件。

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.

Electrodeposition of Gold to Conformally Fill High-Aspect-Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.

Study on Hydrodynamic Characteristics of Pipelines in Open Trenches

Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation for the shallow trench. According to a(r) of the designed trench shape and pre-chosen K-c, the reduction coefficient and sheltering effect can be decided by the result provided in this paper.

A Numerical Model for Natural Backfill of Pipeline Trenches Subjected to Unidirectional/Oscillatory Flows

A numerical model for the self-burial of a pipeline trench is developed. Morphological evolutions of a pipeline trench under steady-current or oscillatory-flow conditions are simulated with/without a pipeline inside the trench. The oscillatory flow in this study represents the action of waves. The two-dimensional Reynolds-averaged continuity and Navier-Stokes equations with the standard k-ε turbulence closure, as well as the sediment transport equations, are solved with the finite difference method in a curvilinear coordinate system. Both bed and suspended loads of sediment transport are included in the morphological model. Because of the lack of experimental data on the backfilling of pipeline trenches, the numerical model is firstly verified against three closely-relevant experiments available in literature. A detailed measurement of the channel migration phenomenon under steady currents is employed for the assessment of the integral performance of the model. The two experimental results from U-tube tests are used to validate the model's ability in predicting oscillatory flows. Different time-marching schemes are employed for the morphological computation under unidirectional and oscillatory conditions. It is found that vortex motions within the trench play an important role in the trench development.

Focal depth,magnitude,and frequency distribution of earthquakes along oceanic trenches

The occurrence of earthquakes in oceanic tren- ches can pose a tsunami threat to lives and properties in active seismic zones. Therefore, the knowledge of focal depth, magnitude, and time distribution of earthquakes along the trenches is needed to investigate the future occurrence of earthquakes in the zones. The oceanic trenches studied, were located from the seismicity map on： latitude ＋51 ° to＋53° and longitude -160° to 176° （Aleutian Trench）, latitude ＋40° to ＋53° and longitude ＋148° to＋165° （Japan Trench）, and latitude -75° to -64° and longitude -15° to ＋30° （Peru-Chile Trench）. The following features of seis- mic events were considered： magnitude distribution, focal depth distribution, and time distribution of earthquake. The results obtained in each trench revealed that the earthquakes increased with time in all the regions. This implies that the lithospheric layer is becoming more unstable. Thus, tectonic stress accumulation is increasing with time. The rate of increase in earthquakes at the Peru-Chile Trench is higher than that of the Japan Trench and the Aleutian Trench. This implies that the convergence of lithospheric plates is higher in the Peru-Chile Trench. Deep earthquakes were observed across all the trenches. The shallow earthquakes were more prominent than intermediate and deep earthquakes in all thetrenches. The seismic events in the trenches are mostly of magnitude range 3.0-4.9. This magnitude range may indi- cate the genesis of mild to moderate tsunamis in the trench zone in near future once sufficient slip would occur with displacement of water column.

NUMERICAL SIMULATION OF 3-D TURBULENT FLOWS OVER DREDGED TRENCHES

A 3- D free surface flow in open channels based on the Reynolds equations with the k-ε turbulence closure model is presented in this paper. Insted of the 'rigid lid' approximation, the solution of the free surface equation is implemented in the velocity-pressure iterative procedure on the basis of the conventional SIMPLE method. This model was used to compute the flow in rectangular channels with trenches dredged across the bottom. The velocity, eddy viscosity coefficient, turbulent shear stress, turbulent kinetic energy and elevation of the free surface can be obtained. The computed results are in good agreement with previous experimental data.

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage(N-CS)layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss(E_(off)).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop(V_(on)).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the V_(on)and E_(off).Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage(BV)on the P+anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the E_(off)by 55%at the same V_(on),and improves the BV by 7.3%compared to the conventional LIGBT.

Lateral downslope transport and tentative sedimentary organic carbon box model in the southern Yap Trench,western Pacific Ocean

Sediment collapse and subsequent lateral downslope migration play important roles in shaping the habitats and regulating sedimentary organic carbon(SOC)cycling in hadal trenches.In this study,three sediment cores were collected using a human-occupied vehicle across the axis of the southern Yap Trench(SYT).The total organic carbon(TOC)and total nitrogen(TN)contents,δ13C,radiocarbon ages,specific surface areas,and grain size compositions of sediments from three cores were measured.We explored the influence of the lateral downslope transport on the dispersal of the sediments and established a tentative box model for the SOC balance.In the SYT,the surface TOC content decreased with water depth and was decoupled by the funneling effect of the V-shaped hadal trench.However,the sedimentation(0.0025 cm/a)and SOC accumulation rates(∼0.038 g/(m^(2)·a)(in terms of OC))were approximately 50%higher in the deeper hadal region than in the abyssal region(0.0016 cm/a and∼0.026 g/(m^(2)·a)(in terms of OC),respectively),indicating the occurrence of lateral downslope transport.The fluctuating variations in the prokaryotic abundances and the SOC accumulation rate suggest the periodic input of surficial sediments from the shallow region.The similar average TOC(0.31%–0.38%),TN(0.06%–0.07%)contents,and SOC compositions(terrestrial OC(11%–18%),marine phytoplanktonic OC(45%–53%),and microbial OC(32%–44%))of the three sites indicate that the lateral downslope transport has a significant mixing effect on the SOC composition.The output fluxes of the laterally transported SOC(0.44–0.56 g/(m^(2)·a)(in terms of OC))contributed approximately(47%–73%)of the total SOC input,and this proportion increased with water depth.The results of this study demonstrate the importance of lateral downslope transport in the spatial distribution and development of biomes.

Variable-K double trenches SOI LDMOS with high-concentration P-pillar

A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant media to electric fields.The device features variable-K dielectric double trenches and a P-pillar between the trenches(VK DT-P LDMOS).The low-K dielectric layer on the surface increases electric field of it.Adding a variable-K material introduces a new electric field peak to the drift region,so as to optimize electric field inside the device.Introduction of the high-concentration vertical P-pillar between the two trenches effectively increases doping concentration of the drift region and maintains charge balance inside it.Thereby,breakdown voltage(BV)of the device is increased.The double conductive channels provide two current paths that significantly reduce specific on-resistance(Ron,sp).Simulation results demonstrate that a 17-μm-length device can achieve a BV of 554 V and a low on-resistance of 13.12 mΩ·cm^2.The Ron,sp of VK DT-P LDMOS is reduced by 78.9%compared with the conventional structure.

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.

Study of Paleoearthquakes by Excavation of Grouped Trenches on the Zemuhe Fault in Daqingliangzi,Xichang,Sichuan

Uncertainties are common in the dating of paleoearthquakes.To improve the credibility of the dating of paleoearthquakes,analysis was done on fault activity,sedimentary environment and seismo-geomorphology to investigate paleoearthquakes along the Zemuhe active fault zone.Grouped trenches were excavated near Daqingliangzi,which revealed three palaeoearthquake events aged 160a,3100a and 5500a～8900a,respectively,including recurrence intervals of about 3000a.Sedimentary processes related to strike-slip fault type earthquakes were discussed,and a sedimentary model was put forward for strike-slip faults at hillsides where drumlin and reverse scarp developed.

Characteristics of dissolved sugars in the Southern Yap Trench from sea surface to hadal zone

2,4,6-Tripyridine-s-triazine(TPTZ)spectrophotometric method was applied to determine the concentrations of dissolved monosaccharides(MCHO),polysaccharides(PCHO),and total carbohydrate(TCHO)in seawater samples collected from sea surface to hadal zone and sediment-seawater interface of the Southern Yap Trench in the Western Pacific Ocean.Results show that the concentrations of MCHO,PCHO,and TCHO ranged from 6.3 to 22.3μmol C/L,1.1 to 25.4μmol C/L,and 12.1 to 44.9μmol C/L,respectively,from the euphotic layer to the hadal zone of the trench.At different sampling stations,the concentrations of MCHO,PCHO,and TCHO in the seawater showed complex vertical variation characteristics,but the overall variation trends were decreasing with water depth.In the Southern Yap Trench,the maximum concentration of MCHO in the seawater appeared in the euphotic layer,and the minimum in the hadal zone.The maximum concentration of PCHO appeared in the euphotic layer,and the minimum in the bathypelagic layer.The water layer where the maxima and minima of the average concentration of TCHO appeared was consistent with that of PCHO.PCHO was the major component of TCHO in the seawater of the Southern Yap Trench.In the seawater from the sediment-seawater interface,the concentrations of MCHO,PCHO,and TCHO ranged from 8.4 to 10.6μmol C/L,3.8 to 5.8μmol C/L,and 12.2 to 15.2μmol C/L,respectively,and MCHO was the major component of TCHO.The key factors affecting the concentration and existing forms of dissolved sugars in the seawater of the Southern Yap Trench included photosynthesis,respiration,polysaccharide hydrolysis,adsorption and desorption of particulate matter,trench“funnel effect”,deep ocean currents,sediment resuspension,and etc.This study provided fundamental data about labile organic matter in abyss and hadal zone of marine environment,which is significant for further understanding of deep-sea organic carbon cycle.

Study on the Application of Vibration Isolation by Using a Trench in Frame Structures

An isolation trench is a simple and effective method to isolate structural vibrations originating from sources of vibration other than earthquakes(machines,traffic,explosions,etc.);however,there is still not a conclusive depth of the isolation trench for frame structures.To investigate the isolation effect of a trench in the frame structure designed for ground vibration,both a field test and finite element analysis were conducted to analyze the reduced effect of the vibration.The vibration reduction analysis was based on the dynamic equation and wave theory.Considering the vibration control of an industrial plant frame,a soil-trench-building finite element model was built to analyze the vibration characteristics of the floor before and after the open isolation trench structure was used.According to the model,a dynamic test was carried out on the frame structure to assess the effect of the vibration reduction by introducing the trench.The results showed that the depth of the trench was the dominating factor in vibration isolation.When the depth of the trench reached 1~1.3 times the wavelength of the Rayleigh wave,the damping effect was the strongest.the width of the trench has little effect on the vibration isolation efficiency,and the trench must be maintained at a certain distance from the building to ensure the vibration damping efficiency.The vibration of each floor was obviously reduced after the trench was built.The vibration damping effect of the trench was significant.

Characteristics of vertical distributions of methane and dimethylsulphoniopropionate in the southern Yap Trench

Methane(CH_(4) )and dimethylsulphoniopropionate(DMSP)are major carbon and sulfur sources for bacterioplankton in the ocean.We investigated the characteristics of CH_(4) and DMSP in the southern Yap Trench from sea surface to hadal zone in June 2017.We found that concentrations of CH_(4) varied from 1.5 to 4.5 nmol/L with saturation between 94% and 204% in the euphotic layer.Concentrations of dissolved DMSP(DMSPd)ranged from 0.5 to 3.7 nmol/L with higher values in surface water and decreased with depth.Concentrations of particulate DMSP(DMSPp)varied from 0 to 13.6 nmol/L.Concentrations of total DMSP(DMSPt)ranged 2.0-15.2 nmol/L.Their concentrations decreased slightly and reached consistent levels in 200-3000-m depth due probably to heterotrophic bacterial production in marine aphotic and high-pressure environments.An exception occurred around 4000-m depth where their concentrations increased considerably and then decreased in deeper water.This previously unrecognized phenomenon sheds light on the elevated concentrations of DMSP in the abyssal layer that might be affected by the Lower Circumpolar Deep Water(LCPW).Concentrations of CH_(4) in seawater of the Benthic Boundary Layer of the southern Yap Trench were slightly higher than those in the water column at approximate depth,and concentrations of DMSP in seawater of the Benthic Boundary Layer of the southern Yap Trench were not much higher than those in the water column at the approximate depth,indicating that sediment was a weak source of CH_(4) but was not a source of DMSP for seawater in the study area.This study presented clear correlations between CH_(4) and DMSP from sea surface to sea bottom,proving that DMSP might be a potential substrate for CH_(4) not only in oxic surface seawater but also in deep water.

SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability

A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, respectively.The switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.