Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction

The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current(SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarizationmodulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state(RS), which is formed by the double ferroelectric layer Ba TiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory(RRAM) devices based on ferroelectric materials.

Analysis of electro-optical intensity modulator for bunch arrival-time monitor at SXFEL

A bunch arrival-time monitor(BAM) based on an electro-optical intensity modulation scheme is currently under development at Shanghai Soft X-ray Free-Electron Laser to meet the high-resolution requirements for bunch stability. The BAM uses a radio frequency signal generated by a pickup cavity to modulate the reference laser pulses in an electro-optical intensity modulator(EOM), and the bunch arrival-time information is derived from the amplitude change of the laser pulse after laser pulse modulation.EOM is a key optical component in the BAM system.Through the basic principle analysis of BAM, many parameters of the EOM are observed to affect the measurement resolution of the BAM system. Therefore, a systematic analysis of the EOM is crucial. In this paper, we present two schemes to compare and analyze an EOM and provide a reference for selecting a new version of the EOM.

Waveguide electro-optic modulators based on self-assembled material systems

Fabrication and characterization of electro-optic modulators based on the novel organic electro-optic materials composed of self-assembled superlattices (SAS) were presented, both wet-dipping self-assembly and vapor phase deposition approaches were discussed. Prototype waveguide electro-optic modulators were fabricated using SAS films integrated with low-loss polymeric materials functioning as partial guiding and cladding layers.Promising electro-optic thin film materials including DTPT and PEPCOOH grown from the vapor phase were used for fabrication and test of electro-optic prototype modulators. Finally,the EO coefficient of tens of pm/V was obtained,which can sufficiently support high-speed and small size EO modulators.

Measurement of Frequency Shift Characteristics Based on LiNbO_3 Waveguide Electro-Optic Intensity Modulator

High-speed and wide-band LiNbO3 waveguide electro-optic intensity modulator has drawn great attention in the field of optical fiber communication and sensor. This paper reports the research results on the measurement of frequency shift characteristics of Mach-Zehnder electro-optic intensity modulator. Two measurement methods of frequency shift characteristics for high and low frequency modulations are studied in theory and experiment and demonstrate different results. The realization of a multi-wavelength optical source based on Mach-Zehnder electro-optic intensity modulator has been introduced. The technique to reach the maximum intensity for interesting shift frequency, particularly for heterodyne detection of Brillouin distributed optical fiber sensing, has been given.

An autobias control system for the electro optic modulator used in a quantum key distribution system

In a quantum key distribution system, it is crucial to keep the extinction ratio of the coherent pulses stable. This means that the direct current bias point of the electro-optic modulator （EOM） used for generating coherent pulses must be locked. In this paper, an autobias control system based on a lock-in-amplifier for the EOM is introduced. Its drift information extracting theory and control method are analyzed comprehensively. The long term drift of the extinction ratio of the coherent pulses is measured by a single photon detector, which indicates that the autobias control system is effective for stabilizing the bias point of the EOM.

Efficient evanescent coupling design for GeSi electro-absorption modulator

Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio （ER） and insertion loss （IL） to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method （BPM）. After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.

Coupled thermal-optic effects and electrical modulation mechanism of birefringence crystal with Gaussian laser incidence

We study the Gaussian laser transmission in lithium niobate crystal（LiNbO3） by using the finite element method to solve the electromagnetic field＇s frequency domain equation and energy equation. The heat generated is identified by calculating the transmission loss of the electromagnetic wave in the birefringence crystal, and the calculated value of the heat generated is substituted into the energy equation. The electromagnetic wave＇s energy losses induced by its multiple refractions and reflections along with the resulting physical property changes of the lithium niobate crystal are considered.Influences of ambient temperature and heat transfer coefficient on refraction and walk-off angles of O-ray and E-ray in the cases of different incident powers and crystal thicknesses are analyzed. The E-ray electrical modulation instances, in which the polarized light waveform is adjusted to the rated condition via an applied electrical field in the cases of different ambient temperatures and heat transfer coefficients, are provided to conclude that there is a correlation between ambient temperature and applied electrical field intensity and a correlation between surface heat transfer coefficient and applied electrical field intensity. The applicable electrical modulation ranges without crystal breakdown are proposed. The study shows that the electrical field-adjustable heat transfer coefficient range becomes narrow as the incident power decreases and wide as the crystal thickness increases. In addition, it is pointed out that controlling the ambient temperature is easier than controlling the heat transfer coefficient. The results of the present study can be used as a quantitative theoretical basis for removing the adverse effects induced by thermal deposition due to linear laser absorption in the crystal, such as depolarization or wave front distortion, and indicate the feasibility of adjusting the refractive index in the window area by changing the heat transfer boundary conditions in a wide-spectrum laser.

An all-optical buffer based on polarization rotation in an EAM

A theoretical model of the refractive index changes of the TE and TM modes in an electro-absorption modulator （EAM） is deduced. The photon absorption and refractive index changes are analyzed numerically. The influence of pump intensity on the phase difference between the TE and TM modes is studied. The polarization rotation effect is obtained in the EAM, and a novel all-optical fiber loop buffer is designed.

Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

Generation of ultra-wide and flat optical frequency comb based on electro absorption modulator

A novel technique is proposed for the generation of ultra-wide and flat optical frequency comb(OFC)based on serially cascading three stages of electro absorption modulators(EAMs)through sinusoidal radio frequency(RF)signals by setting frequencies at f GHz,f/2 GHz and f/4 GHz.Here,the first stage acts as subcarrier generator,the second stage acts as subcarrier doubler,and the third stage acts as subcarrier quadrupler.In addition,a higher number of subcarriers can easily be generated by adjusting the driving sinusoidal RF signal.In this paper,cascading three stages of EAMs driven by50 GHz,25 GHz and 12.5 GHz clock sources,we obtain 272 subcarriers with spacing of 2.5 GHz and power deviation within 1 d B.Theoretical analysis of serially cascaded EAMs for subcarrier generation is also investigated.Principal analysis and simulation of this technique are demonstrated.

Sensitivity improvement of broadband electro-optic polymer-based optical phase modulator using 1D and 2D photonic crystal structures

This Letter introduces the design and simulation of a microstrip-line-based electro-optic （EO） polymer optical phase modulator （PM） that is further enhanced by the addition of photonic crystal （PhC） structures that are in close proximity to the optical core. The slow-wave PhC structure is designed for two different material configurations and placed in the modulator as a superstrate to the optical core; simulation results are depicted for both 1D and 2D PhC structures. The PM characteristics are modeled using a combination of the finite element method and the optical beam propagation method in both the RF and optical domains, respectively. The phase-shift simulation results show a factor of 1.7 increase in an effective EO coefficient （120 pm/V） while maintaining a broadband bandwidth of 40 GHz.

Mach-Zehnder电光调制器产生多波长光源的实验研究

随着对光纤通信容量需求的不断增长,DWDM系统和L波段光器件成为当今研究的热点,多波长光源作为重要的有源器件倍受青睐。本文研究了基于Mach-Zehnder结构的电光强度调制器的理论模型,利用公式仿真得到在一定微波功率调制下强度调制器输出的扩频光谱。实验研究了M-Z结构的集成电光波导强度调制器光波长1550nm处10GHz、15GHz、20GHz扩频的实现,对理论分析所得的输出光谱与实际系统的输出光谱进行比较,发现谱线情况较一致。在调制频率10GHz,调制深度C=1.39,V=2.98V时,输出光谱中可清楚观察到正负三阶等频率间隔的边波带,尤其是一阶边波带与中心波长峰值功率几乎相等,可实现三路光源等功率输出。

光纤-波导五维对接误差对耦合损耗的影响

扩钛铌酸锂电光波导调制器在光纤通信的信息处理中有着重要的应用 ,而光纤与波导的耦合是调制器封装中关键的一步 ,它直接影响调制器的插入损耗。迄今为止 ,对于直接对接耦合法只给出了三维的分析结果 ,本文利用复数高斯积分法给出了五维分析的曲线 ,对对接耦合提出了定量要求。

不同偏压下Zn_(1-x)Cd_xSe-ZnSe超晶格室温电调制反射谱研究

首次研究了在室温和不同直流偏压下 Zn1-x Cdx Se -Zn Se超晶格结构的电调制反射谱 ( ER)的变化。当器件处于弱场范围时 ,随着电场的增加 ,ER谱的信号幅度增加 ,而线型不变 ;在强场区 ,随着电场的增加 ,ER谱的线型发生变化 ,激子跃迁能量红移 ,继续增加反向偏压出现来自于 1 c-2 hh的禁戒跃迁 ,且其强度随反向偏压的增加迅速增加。不同偏压下组合超晶格结构的 ER谱研究表明 ,势垒高度较低的超晶格结构中的激子较易受到电场的调制。

偏置M-Z调制器构建2-bits电光模数转换相位编码方法的分析与模拟

为了降低电光相位编码器功率消耗和解决内部M-Z调制器一致性要求高的问题,利用2个偏置M-Z调制器构成了用于电光模数转换的2-bits电光相位编码器。理论分析了偏置MZ调制器实现2-bits电光相位编码的方法、特点和性能。仿真结果验证了采用偏置M-Z调制器构成的2-bits相位编码方法可行性,并实现了对1GHz模拟电信号的采样速率12GSa/s模数转换。分析和仿真结果表明,采用该方法对调制器一致性要求低,对输入信号功率要求低于0.32 W。分析结果表明,调制器直流漂移不影响最低位量化结果,引起最高位量化结果的判决模糊低于3.8%。

基于F-P干涉的强度型光纤压力传感器

研究基于强度解调技术的Fabry-Perot干涉型光纤微机电系统(micro-electro-mechanical systems,MEMS)压力传感器.该传感器采用MEMS各向异性腐蚀工艺加工的方形硅杯,其硅杯结构尺寸和表面光洁度比圆形压力敏感膜一致性好.传感器采用大面积比的方法,降低硅敏感膜片弯曲变形所引起的非线性测量误差,新增参考光路以补偿光源功率波动对测量的影响.在0～38kPa压力范围内实现了单值测量,相对灵敏度达到0.7%/kPa.实验与理论分析结果一致,具有很好的测量重复性.提出的多波长和多传感融合的测量方法,可用于扩大测量范围,提高灵敏度.

M-Z型极化DANS聚合物电光波导强度调制器研究

研究了Mach-Zehnder型极化聚合物电光波导强度调制器的制备工艺·器件采用DANS(4-dimethylamino-4′nitro-stlibene)聚合物为电光波导材料,由电光波导层、上下介质缓冲层、上下金属电极层构成五层波导结构·对五层光波导各层之间的光学、化学以及微加工工艺的相互兼容性进行了深入研究·采用紫外光漂白方法制备出侧壁光滑的条波导,采用钨丝电晕极化方法对DANS聚合物波导进行有效极化,使其具有电光特性·通过优化器件制备工艺,研制出工作波长为1300nm的M-Z型电光波导强度调制器原型器件·实验测得器件半波电压约为10V,调制带宽约为1GHz·

基于M-Z电光调制的人体通信温度与频率特性分析

为实现人体通信的高速、抗干扰信号检测,提出了基于Mach-Zehnder（M-Z）电光调制的人体通信信号检测方法.对基于M-Z电光调制的人体通信的温度与频率特性进行了分析.通过理论分析与实验对该类型人体通信的温度特性进行了量化分析,基于所推导的信号衰减-频率函数及参数计算分析了其频率特性.结果表明：M-Z电光调制的人体通信在283.15~305.15 K温度变化范围内衰减小于0.43 dB.同时,其在1~40 MHz范围内的信号衰减变化小于7.16 dB,相对于常规的人体通信具有稳定的频率特性.

宇航用抗辐射光收发器件的技术特性与标准研究

宇航用抗辐射光收发模块可实现宇航应用环境下的高速多路并行电光转换传输功能,并实现高速信号的光传输,解决星载数据传输的瓶颈,从传输架构上降低了系统重量,提升了传输带宽,具有里程碑式的意义。本文详细分析了其工作原理、结构组成和相关特性,结合具体应用环境,对某抗辐照12路并行光收发模块的功能性能、质量可靠性和环境适应性进行分析,并基于产品定义和用户需求,正向设计了标准的指标体系和考核要求,为新型光模块产品的标准制定提供指导。