Second-order(χ^((2))) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices.Due to strong photon confnement and long photon lifetime,integrated mic...Second-order(χ^((2))) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices.Due to strong photon confnement and long photon lifetime,integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical efects.However,existing silicon-based materials lack a χ^((2)) response due to their centrosymmetric structures.A variety of novel material platforms possessing χ^((2)) nonlinearity have been developed over the past two decades.This review comprehensively summarizes the progress of second-order nonlinear optical efects in integrated microresonators.First,the basic principles of χ^((2)) nonlinear efects are introduced.Afterward,we highlight the commonly used χ^((2)) nonlinear optical materials,including their material properties and respective functional devices.We also discuss the prospects and challenges of utilizing χ^((2)) nonlinearity in the feld of integrated microcavity photonics.展开更多
The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crys...The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.展开更多
基金the National Key Research and Development Program of China(No.2021YFB2800604)the National Natural Science Foundation of China(Grant Nos.91850115 and 11774110)the State Key Laboratory of Applied Optics(No.SKLAO2021001A10).
文摘Second-order(χ^((2))) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices.Due to strong photon confnement and long photon lifetime,integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical efects.However,existing silicon-based materials lack a χ^((2)) response due to their centrosymmetric structures.A variety of novel material platforms possessing χ^((2)) nonlinearity have been developed over the past two decades.This review comprehensively summarizes the progress of second-order nonlinear optical efects in integrated microresonators.First,the basic principles of χ^((2)) nonlinear efects are introduced.Afterward,we highlight the commonly used χ^((2)) nonlinear optical materials,including their material properties and respective functional devices.We also discuss the prospects and challenges of utilizing χ^((2)) nonlinearity in the feld of integrated microcavity photonics.
基金supported by the JST-PRESTO(JPMJPR19I7)World Premier International Research Center(WPI)initiative on Materials Nanoarchitectonics(MANA),Ministry of Education,Culture,Sports,Science&Technology(MEXT)in JapanNational Key Research and Development Program of China(2018YFE0125700).
文摘The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.