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χ(^(2)) nonlinear photonics in integrated microresonators 被引量:1
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作者 Pengfei Liu Hao Wen +2 位作者 Linhao Ren Lei Shi Xinliang Zhang 《Frontiers of Optoelectronics》 EI CSCD 2023年第3期1-23,共23页
Second-order(χ^((2))) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices.Due to strong photon confnement and long photon lifetime,integrated mic... Second-order(χ^((2))) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices.Due to strong photon confnement and long photon lifetime,integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical efects.However,existing silicon-based materials lack a χ^((2)) response due to their centrosymmetric structures.A variety of novel material platforms possessing χ^((2)) nonlinearity have been developed over the past two decades.This review comprehensively summarizes the progress of second-order nonlinear optical efects in integrated microresonators.First,the basic principles of χ^((2)) nonlinear efects are introduced.Afterward,we highlight the commonly used χ^((2)) nonlinear optical materials,including their material properties and respective functional devices.We also discuss the prospects and challenges of utilizing χ^((2)) nonlinearity in the feld of integrated microcavity photonics. 展开更多
关键词 Second-order nonlinearity Integrated microresonators Frequency conversion electro-optic efect
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High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
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作者 Liwen Sang Meiyong Liao +2 位作者 Masatomo Sumiya Xuelin Yang Bo Shen 《Fundamental Research》 CAS CSCD 2023年第3期403-408,共6页
The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crys... The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved. 展开更多
关键词 INGAN Solar cell High-pressure MOCVD photo-electricity energy conversion In-rich XRD
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