An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator

A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic ＂and＂ function with different load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinction ratio of over 7dB with a 95012 load resistor and a 7mW control light power at 622Mbit/s.

Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.

Performance and Optimization of 10 Gb/s Electroabsorption Modulator in Short Transmission

Transmission performance of electroabsorption modulator in 10 Gb/s transmission systems has been simulated and analyzed under the condition of taking into account the chirp,extinction ratio, transmissivity and rise/fall time.Results show that short transmission distance without EDFA after EAM can be used in future metropolitan area network,but the transmissivity must be carefully considered. The sampling time range and decision level can be optimized to reduce the bit error ratio.

A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.

A Stable Ultrashort Pulse Generator Based on EAM and Well-Designed Compressor for Applications in 160 Gbit/s OTDM Networks

A stable 10 GHz ultrashort pulse generator consisted of an electroabsorption modulator （EAM） and a welldesigned fibre-based pulse compressor is proposed and demonstrated experimentally. The obtained short pulse has high extinction ratio, no pedestal, low timing jitter, and FWHM of only 2.4ps. The excellent performance of multiplexing from 10 GHz to 160 GHz confirms the potential of the generator for applications in 160 Gbit/s optical time-division-multiplexing （OTDM） systems.

All-Optical Wavelength Conversion With Multi-Channel Broadcasting at 10 Gb/s Using an Electroabsorption Modulator

All-optical wavelength conversion has been demonstrated with an electroabsorption modulator based on cross-absorption modulation. For the first time, simultaneous broadcasting up to 6 different wavelengths at 10Gb/s is obtained with less than 0.5-dB polarization dependence.

The design of electroabsorption modulators with negative chirp and very low insertion loss

Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive（CS） to tensile（TS）.The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%（TS） and-0.52% to-0.50%（CS）,respectively.

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.

20-GHz optical pulse source based on cascaded electroabsorption modulators

A high-quality low-timing-jitter 20-GHz optical pulse train is generated by using two cascaded sinusoidally driven electroabsorption modulators （EAMs） at very low bias voltage of -0.8 V in conjunction with atunable distributed feedback （DFB） semiconductor laser. An approximate transform-limited optical pulse, with the pulse width less than 7 ps, the spectral width of 0.3 nm, and the side-mode suppression ratio （SMSR） above 20 dB, is obtained by tuning the optical delay line.

High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response （E/O response） without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

Strain effects on performance of electroabsorption optical modulators

This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.

Analysis of phase regeneration of DPSK/DQPSK signals based on phase-sensitive amplification

Amplification and phase regeneration can be realized using a phase-sensitive amplifier （PSA）. The phase regeneration of differential phase-shift keying （DPSK） signals based on PSA is analyzed theoretically. We realize the phase regeneration of differential quadrature phase-shift keying （DQPSK） signals based on a structure using two balanced PSAs. Simulations show that nearly ideal phase regeneration can be achieved for the DPSK/DQPSK signals.

Hybrid silicon modulators

A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, flflfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorp- tion modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.

Improving depth resolution of diffuse optical tomography with an exponential adjustment method based on maximum singular value of layered sensitivity

The sensitivity of diffuse optical tomography （DOT） imaging exponentially decreases with the increase of photon penetration depth, which leads to a poor depth resolution for DOT. In this letter, an exponential adjustment method （EAM） based on maximum singular value of layered sensitivity is proposed. Optimal depth resolution can be achieved by compensating the reduced sensitivity in the deep medium. Simulations are performed using a semi-infinite model and the simulation results show that the EAM method can substantially improve the depth resolution of deeply embedded objects in the medium. Consequently, the image quality and the reconstruction accuracy for these objects have been largely improved.