Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).

Diamond-based electron emission:Structure,properties and mechanisms

Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.

Measurement of Electron Affinity of Atomic Lutetium via the Cryo-SEVI Method

Electron affinities (EAs) of most lanthanide elements still remain unknown due to their relatively low EA values. In the present work, the cryogenically controlled ion trap is used for accumulating atomic lutetium anion Lu^-, which makes the measurement of electron affinity of lutetium become practicable. The high-resolution photoelectron spectra of Lu^- are obtained via the slow-electron velocity-map imaging method. The electron affinity of Lu is determined to be 1926.2(50) cm^-1 or 0.23882(62) eV. In addition, two excited states of Lu^- are observed.

Electron Affinities of the Early Lanthanide Monoxide Molecules

The photoelectron imagings of LaO-, CeO-, PRO-, and NdO- at 1064 nm are reported. The well resolved photoelectron spectra allow the electron affinities to be determined as 0.99（1） eV for LaO, 1.00（1） eV for CeO, 1.00（1） eV for PrO, and 1.01（1） eV for NdO, respectively. Density functional calculations and natural atomic orbital analyses show that the 4f electrons tend to be localized and suffer little from the charge states of the molecules. The photodetached electron mainly originates from the 6s orbital of the metals. The ligand field theory with the δ=2 assumption is still an effective method to analyze the ground states of the neutral and anionic lanthanide monoxides.

DFT Calculations of the Ionization Potential and Electron Affinity of Alaninamide

Adiabatic and vertical ionization potentials （IPs） mad valence electron affmities （EAs） of alaninamide in gas phase have been detennined using density functional theory （BLYP, B3LYP, B3P86） methods with 6-311＋＋G（d, p） basis set, respectively. IPs and EAs of alaninamide in solutions have been calculated at the B3LYP/6-311＋＋G（d, p） level. Five possible conformers of alaninamide and their charged states have been optimized employing density functional theory B3LYP method with 6-311＋＋（d, p） basis set, respectively.

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10^（18）–1.0 × 10_（19）cm^（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition（MOCVD） under low pressure on the ntype（001）6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy（UPS） analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy（XPS） analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.

Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes

In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.

Accurate calculation of electron affinity for S_3

The accurate equilibrium structures of S_3 and S_3^- are determined by the coupled-cluster method with single, double excitation and perturbative triple excitation(CCSD(T)) with basis sets of aug-cc-pV(n+d)Z(n = T, Q, 5, or 6), complete basis set extrapolation functions with two-parameters and three-parameters, together with considering the contributions due to the core-valence electron correlation, scalar relativistic effects, spin–orbit coupling, and zero-point vibrational corrections. Our calculations show that both the neutral S_3 and anion S_3^- have open forms with C_(2r) vsymmetry. On the basis of the stable geometries, the adiabatic electron affinity of S_3 is determined to be 19041(11) cm^(-1), which is in excellent agreement with the experimental data(19059(7) cm^(-1)). The dependence of geometries and electron affinity on the computation level and physical corrections is discussed. The present computational results are helpful to the experimental molecular spectroscopy and bonding of S_3.

Work Function and Electron Affinity of Semiconductors:Doping Effect and Complication due to Fermi Level Pinning

Semiconductors are a major category of functional materials essential to various applications to sustain the modern society.Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions,such as solar cells,electronic/photonic devices,environmental sensors,and redox hetero-catalysts.Herein,the author provides a critical commentary on photoemission measurement of the work function and,more importantly,the electron affinity of semiconductors essential for energy band diagram of heterojunctions.Particular effort is made towards addressing complications associated with Fermi level pinning due to surficial states of doped semiconductors.

Accurate electron affinity of atomic cerium and excited states of its anion

Electron affinities(EA)of most lanthanide elements still remain unknown owing to their relatively lower EA values and the fairly complicated electronic structures.In the present work,we report the high-resolution photoelectron spectra of atomic cerium anion Ce−using the slow electron velocity-map imaging method in combination with a cold ion trap.The electron affinity of Ce is determined to be 4840.62(21)cm^-1 or 0.600160(26)eV.Moreover,several excited states of Ce(^4H9/2,^4I9/2,^2H9/2,^2G9/2,^2G7/2,^4H13/2,^2F5/2,and ^4I13/2)are observed.

On the Accuracy of the Complete Basis Set Extrapolation for Anionic Systems: A Case Study of the Electron Affinity of Methane

Recent experimental evidence suggests again the existence of the metastable methane anion in plasma swarms. In order to test the reliability of the complete basis set (CBS) extrapolation scheme with augmented correlation-consistent basis sets for anionic molecules, we study the evolution of the electron affinity of methane with benchmark ab initio calculations with aug-cc basis sets up to aug-cc-pV6Z + diffuse. Geometry optimizations and vibrational analysis were done at the MP2 level. The electron affinity (EA) was calculated at the MP2 and CCSD(T) levels with and without frozen core and including the extrapolations to the CBS limit. Using the aug-cc-pVnZ basis sets it is found that two non-decreasing CCSD(T) CBS limits exist for the EA (0.29 and 0.53 eV) obtained with the n = 3, 4, 5 and n = 4, 5, 6 series, respectively. A new scheme is proposed which can be generalized for very accurate quantum chemical description of molecular anions: the standard aug-cc-pVnZ basis sets can be supplemented with extra-diffuse orbitals using a simple even-tempered scheme. This yields a reliable CBS extrapolation method to develop a (discrete approximation of a) continuum anionic state near ionization, viz., one that closely matches the energy of the corresponding neutral state. These results show that CH4 has no stable anions of 2A1 symmetry, implying that plasma swarms with anionic methane consist of metastable rather than stable methane anions.

PHOTOEMISSION STABILITY OF MULTIALKALI PHOTOCATHODES WITH NEGATIVE ELECTRON AFFINITY

In this paper a negative electron affinity （NEA） multialkali photocathode of （Na2KSb-Cs）-O-Cs structure is fabricated by new technology. It is found that its emission stability is much better than that of the NEA GaAs photocathode, but is inferior to that of the conventional Na2KSb（Cs）. After 70 hour performance in a pumping vacuum system, the emission sensitivity of the NEA （Na2KSb-Cs）-O-Cs photocathode drops only by 2.5%. The emission stability is closely related to the states of the activation cesium and oxygen during activation, best results being obtained with cesium ions and excited oxygen. Furthermore, better photoemission sensitivity and emission stability may be obtained if the cathode is illuminated by intense white light during the activation process. The performance of the NEA （Na2KSb-Cs）-O-Cs cathode which has not been illuminated by intense white light during activation may be improved by the illumination even during operation intermission.

Self-Consistent Calculations on the Atomic Electron Affinity and Ionization Energy with Taking Effects of the Nonspherical Distribution of Electrons into Account

We perform the self-consistent calculations on the atomic electron affinity and ionization energy for the first-row atoms by means of our scheme. A striking feature of the present work is the variational method with taking into account effects of the nonspherical distribution of electrons explicitly. Comparing the present results with those of the conventional spherical approximation, the systematical improvement can be found. This means that effects of the nonspherical distribution of electrons may play an essential role on the description of the atomic structures.

元素周期表中的电子亲和势及砷电子亲和势的测量示例

基于先前对原子的电子亲和势和原子负离子的分析工作[J.Phys.Chem.Ref.Data 51,021502(2022)],本篇综述提供了一个关于原子的电子亲和势的简要概述.本文简要描述和对比了三种常用的测量电子亲和势的实验方法,以凸显它们各自的优缺点.为了阐明目前研究中所使用的慢电子速度成像法的特点,本文对砷元素(As)的电子亲和势以及其负离子(As-)的激发态进行了测量.测得As元素的电子亲和势为6488.61(5)cm^(-1)或0.804485(6)eV.实验清晰地分辨了As-的精细结构,其激发态^(3)P_(1)能量比基态^(3)P_(2)的能量高出1029.94(18)cm^(-1)或0.12770(3)eV;激发态^(3)P_(0)能量比基态^(3)P_(2)的能量高出1343.04(55)cm^(-1)或0.16652(7)eV.

NEA GaN光电阴极表面模型研究

针对目前NEAGaN光电阴极研究中Cs激活或Cs/O激活后表面状态的形成过程还不清楚的问题,围绕NEAGaN光电阴极的光电发射机理,结合GaN光电阴极激活过程中出现的现象及成功激活的最终效果,给出了GaN光电阴极铯氧激活后的表面模型[GaN(Mg):Cs]:O-Cs。利用该模型可很好地解释单独用Cs激活时约-1.0eV的有效电子亲和势和Cs/O共同激活时-1.2eV的有效电子亲和势的成因,也较好地解释了表面吸附原子的组合形式,即Cs/O激活后激活层的化学结构由Cs2O2和CsO2构成。

含碳三原子分子结构与电子亲和能的计算

本文分别采用单、双和微扰处理三激发耦合簇方法与自旋非限制的开壳层耦合簇方法对CO_(2),OCS,CS_(2)及其对应阴离子CO_(2)^(-),OCS^(-),CS_(2)^(-)进行高精度的从头算研究.我们计算了这些分子在一系列相关一致基组aug-cc-pV(X+d)Z (X=T,Q,5)以及完全基组极限下的基态平衡几何结构,并研究了芯-价电子相关与标量相对论效应的影响,计算结果与已有文献报道结果吻合较好.基于计算的几何结构,获得了中性分子CO_(2),OCS,CS_(2)的绝热电子亲和能,系统考察了不同基组以及零点能修正对这些分子电子亲和能的影响,给出了考虑各种修正下3种分子准确的电子亲和能.本文将丰富含碳三原子分子的光谱常数和电子亲和能等分子参数的信息,可为实验光谱研究提供重要参考.

NEA光电阴极的(Cs,O)激活工艺研究

在自行研制的负电子亲和势光电阴极性能评估实验系统上 ,首次利用动态光谱响应技术和变角X射线光电子能谱 (XPS)表面分析技术研究了GaAs光电阴极的 (Cs ,O)激活工艺 .获得了首次导Cs、(Cs ,O)导入以及 (Cs ,O)循环的优化激活条件 .XPS分析给出GaAs(Cs ,O)的最佳激活层厚度为 0 .82nm ,首次导Cs达到峰值光电发射时的Cs覆盖率为 0 .71个单层 .在优化激活条件下 ,可以在国产反射式GaAs上获得 10 2 5 μA/lm的积分灵敏度 .

OLED中NEA材料复合阴极影响电子注入效率的作用机理

负电子亲和势材料具有较窄的禁带宽度、功函数低,在OLED的工作电场强范围内可以发射电子,同时在吸收有机材料所发光子能量后可以产生光电子发射,再次注入有机层,提高了电子注入效率。介绍了负电子亲和势材料的形成,理论上分析了其对有机半导体能级的影响以及如何改善有机电致发光器件中电子注入水平,从而提高发光效率。

NEA光电阴极的性能参数评估

利用自行研制的动态光谱响应测试系统直接实现NEA光电阴极的光谱响应在线测试,并对光谱响应曲线进行曲线拟合,间接实现了电子表面逸出几率、扩散长度、后界面复合速率及积分灵敏度的评估。对(Cs,O)激活的GaAs反射式光电阴极进行了性能参数评估,给出了测试结果。

射频EAS系统的关键技术

针对普通射频EAS系统检测灵敏度低、误报率高的缺陷,采用了窄带方式提高射频EAS系统的信噪比和抗干扰能力,提出了几个硬件关键技术,给出了各个关键技术的硬件方框图。关键技术包括锁相接收技术、梳状滤波技术、滑动基准技术和瞬态脉冲吸收技术。经过实验测试,这几个关键技术能提高EAS系统的检测灵敏度并使误报率有显著的改善。