Tuning the electronic conductance of REH_(x)(RE=Nd,Ce,Pr)by structural deformation

Hydride ion(H-)conductors have drawn much attention due to their potential applications in hydrideion-based devices.Rare earth metal hydrides(REH_(x))have fast H-conduction which,unfortunately,is accompanied by detrimental electron conduction preventing their application as ion conductors.Here,REH_(x)(RE=Nd,Ce,and Pr)with varied grain sizes,rich grain boundaries,and defects have been prepared by ball milling and subsequent sintering.The electronic conductivity of the ball-milled REH_(x)samples can be reduced by 2-4 orders of magnitude compared with the non-ball-milled samples.The relationship of electron conduction and miscrostructures in REH_(x)is studied and discussed based on experimental data and previously-proposed classical and quantum theories.The H-conductivity of all REH_(x)is about 10^(-4)to 10^(-3)S cm^(-1)at room temperature,showing promise for the development of H-conductors and their applications in clean energy storage and conversion.

A Modification of LiMn2O4 by Ionic Conductive Agent and Electronic Conductive Agent Coating

Carbon was used as electronic conductive agent, and metasilicic acid lithium (Li2SiO3) as ionic conductive agent, the two factors were investigated cooperatively. We evaluated their effect by using spherical spinel LiMn2O4 which prepared ourselves as cathode material. Then Li2SiO3/carbon surface coating on LiMn2O4 (LMO/C/LSO) which Li2SiO3 inside and carbon/Li2SiO3 coated LiMn2O4 (LMO/LSO/C) were prepared, All of materials were characterized by X-ray diffraction (XRD) and electrochemical test;spherical LiMn2O4 was characterized by scanning electron microscopy (SEM);and coated materials were characterized by transmission electron microscopy (TEM). While uncoated spinel LiMn2O4 maintained 72% of capacity in 60 cycles by the rate of 0.2C, and LMO/LSO/C showed the best electrochemical performance, 89% of the initial capacity remained after 75 cycles at 0.2C. Furthermore, the rate performance of LMO/LSO/C also improved obviously, about 30 mAh·g-1 of capacity attained at the rate of 5C, higher than LMO/C/LSO and bare LiMn2O4.

A review on electronically conducting polymers for lithium-sulfur battery and lithium-selenium battery:Progress and prospects

Lithium-sulfur(Li-S) batteries and lithium-selenium(Li-Se) batteries,as environmental protection energy storage systems with outstanding theoretical specific capacities and high energy densities,have become the hotspots of current researches.Besides,elemental S(Se) raw materials are widely sourced and their production costs are both low,which make them considered one of the new generations of high energy density electrochemical energy storage systems with the most potential for development.However,poor conductivity of elemental S/Se and the notorious "shuttle effect" of lithium polysulfides(polyselenides) severely hinder the commercialization of Li-S/Se batteries.Thanks to the excellent electrical conductivity and strong absorption of lithium polysulfide(polyselenide) about electronically conducting polymer,some of the above thorny problems have been effectively alleviated.The review presents the fundamental studies and current development trends of common electronically conducting polymers in various components of Li-S/Se batteries,which involves polyaniline(PANI) polypyrrole(PPy),and polythiophene(PTh) with its derivatives,e.g.polyethoxythiophene(PEDOT) and poly(3,4-ethylene dioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS).Finally,the review not only summarizes the research directions and challenges facing the application of electronically conducting polymers,but also looks forward to the development prospects of them,which will provide a way for the practical use of electronically conducting polymers in Li-S/Se batteries with outstanding electrochemical properties in the short run.

Effect of ZrO_2 (9mol% Y_2O_3) coating thickness on the electronic conductivity of Mg-PSZ oxygen sensors

The ZrO2 (9mol% Y2O3) coating was prepared evenly on the surface of MgO partially stabilized zirconia (Mg-PSZ) tube (oxygen sensor probe) by dipping the green Mg-PSZ tube in a ZrO2 (9mol% Y2O3) slurry and then co-firing at 1750°C for 8 h. The double-cell method was employed to measure the electronic conductivity parameter and exam the reproducibility of the coated Mg- PSZ tube. The experimental results indicate that the good thermal shock resistance of the Mg-PSZ tube can be retained when the coating thickness is not more than 3.4 μm. The ZrO2 (9mol% Y2O3) coating reduces the electronic conductivity parameter remarka- bly, probably due to the lower electronic conductivity of Y2O,-stabilized ZrO2 than that of MgO-stabilized ZrO2. Moreover, the ZrO2 (9mol% Y2O3) coating can improve the reproducibility and accuracy of the Mg-PSZ tube significantly in the low oxygen measure- ment. The smooth surface feature and lower electronic conductivity of the coated Mg-PSZ tube should be responsible for this im- provement.

Study on Electronic Conductivity of CaO-SiO2-Al2O3-FeOx Slag System

A study on electronic conductivity of CaO-SiO2-Al2O3-FeOxslag system with Wagner polarization technique was carried out.The experimental data show that electronic conductivity is consisted of free electron conductivity and electron hole conductivity and both are related to the content of Fe3+and Fe2+.Free electron conductivity is decreasing and electron hole conductivity is increasing while Fe3+changes to Fe2+.There is a maximum electronic conductivity at some ratio of ferric ions Fe3+to total ion content.Under the experimental conditions,the electronic conductivity is in the range of 10-4—10-2S/cm.

Investigation and Reduction on Conducted Electromagnetic Interference Noise Mechanism for Complex Power Electronics Systems

针对复杂电子系统产生的传导EMI噪声,该文分别利用电偶极子模型、电路分析方法和散射参数方法提出了3种传导EMI噪声理论模型及其等效电路,包括因串扰引起的传导噪声模型,因接地不良引起的传导噪声模型,以及因PCB线缆阻抗失配引起的传导噪声模型。同时,还设计了一种串扰扼流圈以有效抑制因串扰引起的传导EMI噪声。实验结果表明,采用文中方法,某型商用车载导航和刷卡器能够通过GB 9254标准测试,噪声抑制效果分别可达44.8和29.28 dB V,从而验证了方法的有效性。

Contact effect in the dynamic electron transport of a two-probe mesoscopic conductor

Based on the self-consistent electron dynamic transport theory for multi-probe mesoscopic systems, we calculate the distribution of internal potential, charge density, and ac conductance of a two-probe mesoscopic conductor with wide trapezoid reservoirs, and study the contact effect. The results show that including the contact effect can make a significant difference to the frequency-dependent electron transport properties. In the nonzero frequency case, the internal potential and the charge density are complex with extremely small imaginary parts. Importantly, the imaginary part of the charge density gives rise to a real ac conductance （admittance）, which corresponds to the charge-relaxation resistance.

Reliability aspects of electronics packaging technology using anisotropic conductive adhesives

Anisotropic conductive adhesive technology for electronics packaging and interconnect application has significantly been developed during the last few years. It is time to make a summary of what has been done in this field. The present paper reviews the technology development, especially from the reliability point of view. It is pointed out that anisotropic conductive adhesives are now widely used in many applications and the reliability data and models have been developed to a large extent for anisotropic conductive adhesives in various applications.

Laser X-ray Conversion and Electron Thermal Conductivity

The influence of electron thermal conductivity on the laser x-ray conversion in the coupling of 3w. laser with Au plane target has been investigated by using a non-LTE radiation hydrodynamic code. The non-local electron thermal conductivity is introduced and compared with the other two kinds of the flux-limited Spitzer-Harm description. The results show that the non-local thermal conductivity causes the increase of the laser x-ray conversion efficiency and important changes of the plasma state and coupling feature.

IR, 1H NMR, Electronic Properties and Conductivity Studies of N1 ,N4-Bis（Diphme）Benzene-l,4-Diamine Chloride Zirconium （IV） [{（Ar）2NC6H5N（Ar）2}ZrCl4] （Ar = C6H5）

A range of new compounds such as N1,N4-bis（diphenylmethlene）benzene-l,4-diamine zirconium （IV） chloride [{（Ar）2NC6HsN（Ar）z}ZrCl4] （Ar = C6H5） complex counting the chelating amine and chloride in position trans have been prepared. Well-defined NI,N4-bis（diphenylmethlene）benzene-l,4-diamine zirconium （IV） chloride [{（Ar）2NC6H5N（Ar）2}ZrCl4] （Ar = C6H5） was obtained by stoichiometric addition of {（Ar）2NC6H5N（Ar）2} （Ar = C6H5） and {ZrC14} in ethanol at reflex temperature. IR, 1H NMR, electronic properties using hyperchem program study has been improved for this compound such as bond distance, and this compound was also defined as electric conductivity which proves to be useful for conductively compound.

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.

A Valence Electron Structure Criterion of Ionic Conductivity of Sr- and Mg-doped LaGaO_3 Ceramics

The valence electron structures of Sr- and Mg-doped LaGaO3 ceramics with different compositions were calculated by Empirical Electron Theory of Solids and Molecules （EET）. A criterion for the ionic conductivity was proposed, i.e. the 1/（nAnB） increases with increasing the ionic conductivity when x or y〈20% （in molar fraction）.

Ni-P-SBR composite-electroless-plating enables Si anode with high conductivity and elasticity for high performance Li-ion batteries application

Silica-based anode is widely employed for high energy density Li-ion batteries owing to their high theoretical specific capacity(4200 m A h g-1).However,it is always accompanied by a huge volume expansion(300%)and shrinks during the lithiation/delithiation process,further leading to low cycle stability.Efforts to mitigate the adverse effects caused by volume expansion such as robust binder matrix,Coreshell structure,etc.,inevitably affect the electronic conductivity within the electrode.Herein,a high conductivity and elasticity Si anode(Ni-P-SBR(styrene-butadiene rubber)@Si)was designed and fabricated via the Ni-P-SBR composite-electroless-plating process.In this design,the Si particles are surrounded by SBR polymer and Ni particles,where the SBR can adapt to the volume change and Ni particles can provide the electrode with high electronic conductivity.Therefore,the Ni-P-SBR@Si delivers a high initial capacity of 3470 m A h g-1and presents capacity retention of 49.4%within 200 cycles at 600 m A g-1.Additionally,a high capacity of 1153 m A h g-1can be achieved at 2000 m A g-1and can be cycled stably under bending conditions.This strategy provides feasible ideas to solve the key issues that limit the practical application of Si anodes.

Ionic conductivity study on electron beam irradiated polyacrylonitrile-polyethylene oxide gel

Different mass percent polyacrylonitrile （PAN）-polyethylene oxide （PEO） gels were prepared and irradiated by an electron beam （EB） with energy of 1.0 MeV to the dose ranging from 13 kGy to 260 kGy. The gels were analysed by using Fourier transform infrared spectrum, gel fraction and ionic conductivity （IC） measurement. The results show that the gel is crosslinked by EB irradiation, the crosslinking degree rises with the increasing EB irradiation dose （ID） and the mass percents of both PAN and PEO contribute a lot to the crosslinking; in addition, EB irradiation can promote the IC of PAN-PEO gels. There exists an optimum irradiation dose, at which the IC can increase dramatically. The IC changes of the PAN-PEO gels along with ID are divided into three regions： IC rapidly increasing region, IC decreasing region and IC balanced region. The cause of the change can be ascribed to two aspects, gel capturing electron degree and crosslinking degree. By comparing the IC-ID curves of different mass percents of PAN and PEO in gel, we found that PAN plays a more important role for gel IC promotion than PEO, since addition of PAN in gel causes the IC-ID curve sharper, while addition of PEO in gel causes the curve milder.

Density functional theory analysis of electronic structure and optical properties of La-doped Cd_2SnO_4 transparent conducting oxide

The electronic structural, effective masses of carriers, and optical properties of pure and La-doped Cd2SnO4 are calculated by using the first-principles method based on the density functional theory. Using the GGA＋U method, we show that Cd2SnO4 is a direct band-gap semiconductor with a band gap of 2.216 eV, the band gap decreases to 2.02 eV and the Fermi energy level moves to the conduction band after La doping. The density of states of Cd2SnO4 shows that the bottom of the conduction band is composed of Cd 5s, Sn 5s, and Sn 5p orbits, the top of the valence band is composed of Cd 4d and O 2p, and the La 5d orbital is hybridized with the O 2p orbital, which plays a key role at the conduction band bottom after La doping. The effective masses at the conduction band bottom of pure and La-doped Cd2SnO4 are 0.18m0 and 0.092m0, respectively, which indicates that the electrical conductivity of Cd2SnO4 after La doping is improved. The calculated optical properties show that the optical transmittance of La-doped Cd2SnO4 is 92%, the optical absorption edge is slightly blue shifted, and the optical band gap is increased to 3.263 eV. All the results indicate that the conductivity and optical transmittance of Cd2SnO4 can be improved by doping La.

面向人体运动检测的水凝胶基柔性应变传感器设计

在可穿戴电子设备迅猛发展的背景下,构建面向人体运动检测的可穿戴柔性应变传感器成为目前传感器研究的重点之一。基于聚丙烯酰胺(PAM)、纤维素纳米晶(CNCs)、单宁酸(TA)构建了一种导电水凝胶基柔性应变传感器。机械性能与电学性能测试结果表明,相较于其他柔性应变传感器,聚丙烯酰胺-纤维素纳米晶-单宁酸导电水凝胶基柔性应变传感器具有超长的拉伸范围(0%~2 900%)、较好的黏附性、快速的响应时间(280 ms)和良好的稳定性(超320次加载-卸载循环)。该传感器对人体关节弯曲的大应变与喉部活动的小应变等运动信号具备良好的检测功能,可用作人体运动检测的柔性可穿戴传感器。

A Loop Diagram Approach to the Nonlinear Optical Conductivity for an Electron-Phonon System

A loop diagram approach to the nonlinear optical conductivity of an electron-phonon system is introduced. This approach can be categorized as another Feynman-like scheme because all contributions to the self-energy terms can be grouped into topologically-distinct loop diagrams. The results for up to the first order nonlinear conductivity are identical to those derived using the KC reduction identity (KCRI) and the state- dependent projection operator (SDPO) introduced by the present authors. The result satisfies the “population criterion” in that the population of electrons and phonons appear independently or the Fermi distributions are multiplied by the Planck distributions in the formalism. Therefore it is possible, in an organized manner, to present the phonon emissions and absorptions as well as photon absorptions in all electron transition processes. In additions, the calculation needed to obtain the line shape function appearing in the energy denominator of the conductivity can be reduced using this diagram method. This method shall be called the “KC loop diagram method”, since it originates from proper application of KCRI’s and SDPO’s.

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs （high electronic mobility transistors） EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with TT = （0.5 - 6） ms and DT ： （1 - 5）×10^13 cm^-2. eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with TW（f）= （0.2 - 2） μs and slow with TT（s） = （0.5 - 6） ms. The density of trap states evaluated on the EHEMTs is Dw（f） ： （1 - 3） × 10^12 cm^-2. eV^-1 and DT（s） =（2 - 6） × 10^12 cm-2. eV-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.

粉煤灰基催化材料提升电子迁移率的制备机理

固体表面催化材料提升电子迁移率的制备机理目前缺少系统研究。以粉煤灰为研究对象,采用湿式磁选、高能球磨法和等离子体放电改性等方法联合改性以提升材料电子迁移率,并探讨其制备机理。实验结果表明,最佳实验参数组合为用1.2 T磁棒磁选3次,然后在转速550 r/min下球磨30 h,最后在放电间隙3 mm、放电长度200 mm、放电功率130 W和改性时间20 min条件下等离子体放电改性。得到的粉煤灰样品电阻率下降到27.92 MΩ·cm,比原始粉煤灰的电阻率提高四个数量级。该研究表明构筑完善且连续的导电网络是提升材料导电性能与电子迁移率的前提。