Multiplication Model of EMCCD Based on Single Type of Carrier

The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.

Nitroxide radical cathode material with multiple electron reactions

Organic materials with redox-active centers are regarded as promising candidates for rechargeable batteries in recent years for their light weight, low cost, environmental friendliness and structural diversity [1–4]. Organic materials, such as conducting polymers (polyacetylene, polypyrrole, polyaniline, etc.)[5], conjugated carbonyl compounds (quinone compounds, imides, etc.)[6–9] and nitroxide radical (N-O.)[10,11] compounds have been attempted as cathode materials in lithium-ion batteries (LIBs).

Electron Spin Decoherence of Nitrogen-Vacancy Center Coupled to Multiple Spin Baths

We present the experimental results of nitrogen-vacancy （NV） electron spin decoherence, which are linked to the coexistence of electron spin bath of nitrogen impurity （PI center） and 13C nuclear spin bath. In previous works, only one dominant decoherence source is studied： P1 electron spin bath for type-Ⅰb diamond; or 13C nuclear spin bath for type-Ⅱa diamond. In general, the thermal fluctuation from both spin baths can be eliminated by the Hahn echo sequence, resulting in a long coherence time （T2 ） of about 400#8. However, in a high-purity type-Ⅱa diamond where 1℃ nuclear spin bath is the dominant decoherence source, dramatic decreases of NV electron spin T2 time caused by P1 electron spin bath are observed under certain magnetic field. We further apply the engineered Hahn echo sequence to confirm the decoherenee mechanism of multiple spin baths and quantitatively estimate the contribution of P1 electron spin bath. Our results are helpful to understand the NV decoherence mechanisms, which will benefit quantum computing and quantum metrology.

Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays

Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices.While mask-less/direct-write electron beam(EB)lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond,it remains difficult to achieve an appropriate level of throughput.Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed.However,a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array.This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write(MPEBDW)lithography.The emitter array used in our study includes nanocrystalline-Si(nc-Si)ballistic electron emitters.Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons.The transport mechanism allows one to quickly turn electron beamlets on or off.The emitter array is a micro-electro-mechanical system(MEMS)that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor(CMOS)large-scale integration(LSI)system that controls each emitter individually.The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off.Each emitted beamlet(10×10μm^(2))is converged to 10×10 nm^(2) on a target via the reduction electron optic system under development.This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array.We examine beamlets and their electron emission characteristics via a 1:1 exposure test.