A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

Effect of Chirality on the Electronic Transport Properties of the Thioxanthene-Based Molecular Switch

Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.

Analysis and Comparison of Power Electronic Converters for Conventional and Toroidal Switched Reluctance Machines

Different power electronic converter topologies are introduced in this paper for both Conventional Switched Reluctance Machine (CSRM) and Toroidal Switched Reluctance Machine (TSRM) drive systems. Their commutation, switch and diode currents, power losses, and efficiencies under over modulation operation are analyzed and compared for converter characteristics study, performance evaluation and topology selection for CSRM and TSRM drive systems. The switch and diode silicon volumes required for each CSRM and TSRM drives are also compared according to their corresponding currents at the equivalent machine torque versus speed operating points.

Effect of Switching on Metal-Organic Interface Adhesion Relevant to Organic Electronic Devices

Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs), organic photovoltaic solar cells, organic field effect transistors (OFETs), organic spintronic devices and organic-based Write Once Read Many times (WORM) memory devices on both rigid and flexible substrates in laboratories around the world. The multilayer structure of these devices makes interfaces between dissimilar materials in contact and plays a prominent role in charge transport and injection efficiency which inevitably affect device performance. This paper presents results of an initial study on how switching between voltage thresholds and chemical surface treatment affects adhesion properties of a metal-organic (Au-PEDOT:PSS) contact interface in a WORM device. Contact and Tapping-mode Atomic Force Microscopy (AFM) gave surface topography, phase imaging and interface adhesion properties in addition to SEM/EDX imaging which showed that surface treatment, switching and surface roughness all appeared to be key factors in increasing interface adhesion with implications for increased device performance.

Experimental investigation on the development characteristics of initial electrons in a gas pressurized closing switch under DC voltage

As one of the most important elements in linear transformer driver(LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.

Room Temperature Phosphorescence pH Switch Based on Photo-induced Electron Transfer

In this paper, photoinduced electron transfer(PET) phosphoroionophore, N-(1-bromo- 2-naphthylmethyl)-diethanolamine (BND) was synthesized and its phosphorescent characteristics were studied. The experimental results showed that strong phosphorescence could be observed in b-cyclodextrin aqueous solution only at low pH value. This system combined AND and NOT function to produce a three-input inhibit (INH) logic gate.

A Novel Single-Switch Single-Stage Electronic Ballast

A single-stage single-switch high- frequency electronic ballast topology is presented. The circuit topology is the integration of a buck power- factor-correction （PFC） converter and a class E resonant inverter with only one active power switch. The buck converter is operated in discontinuous conduction mode and at a fixed switching frequency, and constant duty cycle to achieve high power factor and it can be controlled easily. Detailed analysis of the operation and characteristics of the circuit is provided. Simulation results satisfy present standard requirements.

Top Switch单片开关电源的原理与应用

TopSwitch器件是一种PWM/MOSFET二合一的新型集成芯片。使用它制作高频开关电源 ,不仅成本低 ,电路简单 ,而且具有较好的电磁兼容性能。本文着重论述TopSwitch的工作原理 ,设计原则及典型应用。

基于发展的PWM Switch模型的Buck/Boost双向直直变换器建模及分析

提出了双向功率流动场合的PWM Switch模型,同时选取典型的Buck/Boost双向变换器作为评估平台。小信号分析结果表明,Buck/Boost双向直直变换器通过仅控制Buck模式主控管可以对电池充放电模式进行切换。其提供了对变换器稳态及动态性能研究的一种快速仿真方法。基于改进PWM Switch模型及器件级电路的详尽仿真对比验证了模型的精确性。

Experimental Study of the Recovery Times of Spark Gap Switch with Different Gases

A two-pulse method is used to determine the insulation recovery time of the gas spark gap switch with different types of gas applied in a high power accelerator with a water dielectric pulse forming line. At the breakdown voltage of 450 kV, with the vacuum diode voltage of about 200 kV, and a current of 30 kA, recovery characteristics of H2, N2, SF6 were studied. The recovery percentages of the gas breakdown voltage and vacuum diode voltage were determined. The results show that hydrogen has the best recovery characteristics. At a pulse interval of 8.8 ms, the recovery percentages of both the gas breakdown voltage and vacuum diode voltage for hydrogen exceed 95%. For SF6 and N2 with an interval of 25 ms and 50 ms respectively, a 90% voltage recovery was obtained. The experiments also proved that the repetitive rate of the high power accelerator with a pulse forming line is mainly restricted by the gas switch repetitive rate; the recovery percentages of the vacuum diode voltage are limited by the recovery percentages of the gas switch breakdown voltage. The hydrogen switch can be employed for a high repetitive rate-high power accelerator with a pulse forming line.

Switching mechanism for TiO_2 memristor and quantitative analysis of exponential model parameters

The memristor, as the fourth basic circuit element, has drawn worldwide attention since its physical implementation was released by HP Labs in 2008. However, at the nano-scale, there are many difficulties for memristor physical realization. So a better understanding and analysis of a good model will help us to study the characteristics of a memristor. In this paper, we analyze a possible mechanism for the switching behavior of a memristor with a Pt/TiO2/Pt structure, and explain the changes of electronic barrier at the interface of Pt/TiO2. Then, a quantitative analysis about each parameter in the exponential model of memristor is conducted based on the calculation results. The analysis results are validated by simulation results. The efforts made in this paper will provide researchers with theoretical guidance on choosing appropriate values for(α, β, χ, γ) in this exponential model.

Experimental Study of Electron Emission Characteristics of a Surface Flashover Trigger in a Low Pressure Environment

Characteristics of electron emission induced by a surface flashover trigger device in a low-pressure trigger switch were investigated. A test method to measure the emitted charges from the trigger device was developed, and the factors affecting the emitted charges were analyzed. The results indicated that the major emitted charges from the trigger device were induced by surface plasma generated by surface flashover occurring on the trigger dielectric material. The emitted charges and the peak emission current increased linearly with the change in the trigger voltage and bias voltage. The emitted charges collected from the anode were affected by the gap distance. However, the emitted charges were less affected by the anode diameter. Furthermore, the emitted charges and the peak emission current decreased rapidly with the increase in gas pressure in a range from 0 Pa to 100 Pa, and then remained stable or changed slightly when the increase in gas pressure up to 2400 Pa.

DEVELOPMENT OF PHOTOCONDUCTIVE SWITCH AND ITS APPLICATIONS

The picosecond photoconductive switches are developed and used to detect the pulse laser waveform. By using the photoconductive switches, an novel lab model of ultra-wide band(UWB) radar is also developed. The experimental results are given to show the performances of the switches and the UWB radar.

High-Performance AC-DC Power Electronic Converter Generator for Hybrid-Solar Vehicles

This paper describes the principles of operation and the physical model of an advanced AC-DC converter generator （with the electronic converter acting as an AC-DC rectifier with reverse-conducting MOSFETs （metal-oxide semiconductor field-effect transistors） as fast-electronic switches with a relatively low ON-state voltage drop） for HSVs. An AC-DC converter, when seen as an AC-DC rectifier, can be used in many fields, e.g., for multi-functional AC-DC/DC-AC convener generator^starter and conventional DC-AC convener motors and AC-DC converter generators or generator sets, welding machines, etc. The paper also describes a novel AC-DC convener, with reverse-conducting transistors and without the use of optoelectronic separation （which does not require a separate power supply）, which may be easily realized in IC （integrated-circuit） technology. Computer simulation allows for waveform evaluation for timing analysis of all components of the AC-DC-converter＇s physical model, both during normal operation as well as in some states of emergency. The paper also presents the results of bench experimental studies where the MOSFETs were used as fast-electronic switches with a relatively low ON-state voltage drop. For experimental studies, a novel AC-DC converter has been put together on the Mitsubishi FM600TU-3A module. The AC-DC converter with reverse-conducting transistors in a double-way connection has a lot of advantages compared to the conventional AC-DC convener acting as a diode rectifier, such as higher energy efficiency and greater reliability resulting from the lower temperature of electronic switches.

一种基于磁耦合转移原理的10kV直流断路器

直流电流没有自然过零点,因此开断直流短路电流比开断交流短路电流更为困难。本文介绍一种基于磁耦合电流转移原理的中压10kV直流断路器拓扑方案,该断路器可实现对15kA直流电流的快速开断。首先,对直流断路器原理和控制逻辑进行介绍;然后,根据拓扑方案提出快速机械开关、电力电子开关、磁耦合装置等核心部件的设计思路;最后,搭建仿真模型对该方案进行仿真分析,模拟不同工况下的开断情况,仿真结果验证了该方案的有效性。

Temporal and spatial evolution of air-spark switch plasma investigated by the Mach–Zehnder interferometer

An air-spark switch plasma was diagnosed by the Mach–Zehnder laser interferometer with ultra-high spatial and temporal resolution. The interferograms containing plasma phase shift information at different time were obtained. The phase shift distributions of the plasma were extracted by numerically processing the interferograms. The three-dimensional(3 D) electron density distributions of the air-spark switch plasma were then obtained. The working process of the air-spark switch was described by analyzing the temporal and spatial evolution of the plasma electron density.

Experimental Research of ZnO Surface Flashover Trigger Device of Pseudo-Spark Switch

Pseudo-spark switch（PSS） is one of the most widely used discharge switches for pulse power technology.It has many special characteristics such as reliability in a wide voltage range,small delay time,as well as small delay jitter.In this paper,the measuring method for the initial plasma of ZnO surface flashover triggering device of PSS is studied and the results of the measurement show that the electron emission charge is mainly influenced by trigger voltage,gas pressure and DC bias voltage.When the bias voltage increases from 2 kV to 6 kV with the gap distancc fixed at 3 mm,the electron emission charge changes from 2 μC to about 6μC.When the gap distance changes from 3 mm to 5 mm with the bias voltage fixed at 2 kV,the electron emission charge increases from 1.5 μC to 2.5μC.When the gap distance is 4 mm,the hold-off voltage of PSS is 45 kV at gas pressure of 2 Pa,the minimum operating voltage is less than 1 kV.So,the operating scope is from 2.22%to 99%of its self-breakdown voltage.The discharging delay time decreases from 450 ns to 150 ns when the trigger pulse voltage is 1 kV and the discharging voltage is changed from 1 kV to 12 kV.When the trigger pulse voltage is 6 kV,the discharging delay time is less than 100 ns and changes from 100 ns to 50 ns,and the delay jitters are less than30 ns.

基于高频振荡的变流器杂散电感多参数提取方法

针对变流器不同位置杂散电感准确获取困难的问题,提出一种基于LC高频振荡原理的杂散电感多参数提取方法,充分利用变流器自身结构,通过3个现场实验主动构建不同的谐振电路,并根据它们的振荡频率计算变流器不同位置的杂散电感。首先阐述了高频振荡法的基本原理,建立了不同谐振实验的等值电路模型。然后,以1700 V/450 A IGBT变流器系统为例,通过仿真与实验进行了可行性与有效性验证。最后,通过实验与传统双脉冲法进行了对比分析。研究表明:所提出的方法可有效提取变流器内不同位置的杂散电感参数,与双脉冲法提取开关杂散电感结果基本一致,精度可达纳亨级。

基于QFSK调制的DC-DC变换器功率/数据复合传输方法

传统电力线通信方案的硬件设计较为复杂。DC-DC变换器具有发送数据的潜能,可进行功率/数据复合传输。文中提出一种基于四进制频移键控(QFSK)调制的电力电子开关调制方案,通过调制开关频率将数据信息嵌入原始脉宽调制(PWM)信号中,使得电压纹波携带数据的频率特征;再通过基于滑动离散傅里叶变换的解调方案实现数据接收,最终实现功率/数据的同步传输。首先,证明了PWM信号与电压纹波频率一致的关系;然后,给出数据调制与解调的方案;以负载突变工况为例,通过对Buck变换器建模,分析功率变换暂态过程对通信的干扰影响;最后,搭建由两个Buck变换器组成的实验平台,验证了所提方案可实现20 kbit/s的通信速率;并以光伏优化器为应用背景,验证了所提方案的有效性。

高压直流断路器在张北柔性直流电网中的应用

高压直流断路器是柔性直流换流站构成直流电网的核心设备,但±500 kV电压等级的高压直流断路器尚无应用经验。为了验证±500 kV高压直流断路器在实际应用中的开断特性,介绍了机械式、耦合负压式、混合式3种不同技术路线的高压直流断路器的拓扑结构,在张北柔性直流电网中通过现场实际短路接地故障,验证了±500 kV高压直流断路器能够在3 ms内可靠切断故障电流,最后对3种不同技术路线的高压直流断路器工作特性进行对比分析,指出了不同技术路线的高压直流断路器在分合闸过程中存在的问题,为大容量高压直流断路器的研制与应用提供一定参考。