Excited state biexcitons in monolayer WSe_(2)driven by vertically grown graphene nanosheets with high-density electron trapping edges

Interface engineering in atomically thin transition metal dichalcogenides(TMDs)is becoming an important and powerful technique to alter their properties,enabling new optoelectronic applications and quantum devices.Interface engineering in a monolayer WSe_(2)sample via introduction of high-density edges of standing structured graphene nanosheets(GNs)is realized.A strong photoluminescence(PL)emission peak from intravalley and intervalley trions at about 750 nm is observed at the room temperature,which indicated the heavily p-type doping of the monolayer WSe_(2)/thin graphene nanosheet-embedded carbon(TGNEC)film heterostructure.We also successfully triggered the emission of biexcitons(excited state biexciton)in a monolayer WSe_(2),via the electron trapping centers of edge quantum wells of a TGNEC film.The PL emission of a monolayer WSe_(2)/GNEC film is quenched by capturing the photoexcited electrons to reduce the electron-hole recombination rate.This study can be an important benchmark for the extensive understanding of light–matter interaction in TMDs,and their dynamics.

Effect of trivalent rare earth ions doping on the fluorescence properties of electron trapping materials SrS:Eu^(2+)

Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enhance the fluorescence properties.It was found that Sm3＋ and Tb3＋ had the best photoluminescence stimulated luminescence （PSL） effect among the selected trivalent rare-earth ions.All the SrS：Eu2＋ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS：Eu2＋.

The influence of trapping centres on the photoelectron decay in silver halide

Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.

Lifetime measurement of the 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)at an electron beam ion trap

An experimental measurement of the lifetime of 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)is reported in this work.The Mo^(15+)ions are produced and trapped in an electron beam ion trap with a magnetic field of 0.65 T.The decay photons emitted from 3d^(9) ^(2)D_(3/2) level are subsequently recorded via a cooled photomultiplier tube.Through meticulous scrutiny of potential systematic uncertainties affecting the measurement outcomes,we have determined the lifetime of Mo^(15+)3d^(9)2D_(3/2)metastable level to be 2.83(22)ms.The experimental result provides a clear distinguishment from existing calculations based on various theoretical approaches.

Schamel equation in an inhomogeneous magnetized sheared flow plasma with q-nonextensive trapped electrons

An investigation is carried out for understanding the properties of ion–acoustic（IA） solitary waves in an inhomogeneous magnetized electron-ion plasma with field-aligned sheared flow under the impact of q-nonextensive trapped electrons. The Schamel equation and its stationary solution in the form of solitary waves are obtained for this inhomogeneous plasma. It is shown that the amplitude of IA solitary waves increases with higher trapping efficiency（β）, while the width remains almost the same. Further, it is found that the amplitude of the solitary waves decreases with enhanced normalized drift speed, shear flow parameter and the population of the energetic particles. The size of the nonlinear solitary structures is calculated to be a few hundred meters and it is pointed out that the present results are useful to understand the solar wind plasma.

Distribution of electron traps in SiO_2/HfO_2 nMOSFET

In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are observed, which are located at ？E ^-1.0 eV and-1.43 eV, respectively. It is found that the former one is close to the SiO_2/HfO_2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO_2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment,and reliability improvement for advanced semiconductor devices.

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.

Damping of Geodesic Acoustic Mode by Trapped Electrons

We study the Landau resonance between geodesic acoustic mode（GAM） and trapped electrons as a GAM’s collisionless damping. The assumption of ˉωde 〈〈ωbeis adopted.The damping rate induced by trapped electrons is found to be an increasing function of q. In low q range, circulating-ion-induced damping rate is larger than that induced by trapped electrons.As q increases, the latter becomes larger than the former. The reason is that trapped electrons’ resonant velocity is close to vtefrom the lower side, whiles circulating ions’ resonant velocity gets bigger further from vti. So the number of resonant trapped electrons increases, whiles the number of resonant circulating ions decreases. The amplitude of damping rate induced by trapped electrons in the edge plasma can be comparable to that induced by circulating ions in the low q range.Another phenomenon we found is that in the chosen range of, the damping caused by trapped electrons has a maximum value at point εq for different q. The reason is that as is close to q,trapped electorns’ resonant velocity is close to vte.

Effects of trapped electrons on the ion temperature gradient mode in tokamak plasmas with hollow density profiles

The ion temperature gradient(ITG)mode in the presence of impurity ions and trapped electrons(TEs)is numerically investigated in tokamak plasmas with hollow density profiles,using the gyrokinetic integral eigenmode equation.It is found that in the inverted density plasma,the increase of the ITG enhances the growth rate and frequency of the ITG,and the density gradient plays an important role in the ITG modes.For weak density gradient situations,the trapped electron effects increase the instability of the ITG,while the impurity has an obviously stabilizing effect.For the strong density gradient cases,both the impurities and trapped electrons enhance the ITG instabilities.In addition,it is shown that the growth rate of the ITG decreases with positive magnetic shear s while the real frequency increases with positive magnetic shear.The growth rate of the ITG increases with negative magnetic shear s while the real frequency decreases with negative magnetic shear.The length of the calculated mode structure in the positive and negative magnetic shear intervals is also presented.

Nonlinear Dust Acoustic Waves in a Magnetized Dusty Plasma with Trapped and Superthermal Electrons

In this work, the effects of superthermal and trapped electrons on the oblique propa- gation of nonlinear dust-acoustic waves in a magnetized dusty （complex） plasma are investigated. The dynamic of electrons is simulated by the generalized Lorentzian （k） distribution function （DF）. The dust grains are cold and their dynamics are simulated by hydrodynamic equations. Using the standard reductive perturbation technique （RPT） a nonlinear modified Korteweg-de Vries （mKdV） equation is derived. Two types of solitary waves; fast and slow dust acoustic solitons, exist in this plasma. Calculations reveal that compressive solitary structures are likely to propagate in this plasma where dust grains are negatively （or positively） charged. The properties of dust acoustic solitons （DASs） are also investigated numerically.

Observation of trapped and passing runaway electrons by infrared camera in the EAST tokamak

In EAST,synchrotron radiation is emitted by runaway electrons in the infrared band,which can be observed by infrared cameras.This synchrotron radiation is mainly emitted by passing runaway electrons with tens of MeV energy.A common feature of radiation dominated by passing runaway electrons is that it is strongest on the high field side.However,the deeply trapped runaway electrons cannot reach the high field side in principle.Therefore,in this case,the high field side radiation is expected to be weak.This paper reports for the first time that the synchrotron radiation from trapped runaway electrons dominates that from passing runaway electrons and is identifiable in an image.Although the synchrotron radiation dominated by trapped runaway electrons can be observed in experiment,the proportion of trapped runaway electrons is very low.

Effects of trapped electrons on off-axis lower hybrid current drive in tokamaks

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.

K-shell excitation dielectronic recombination resonance strengths of highly charged Helike to O-like Xe ions

Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.

Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al2O3 Nanocomposite Films Based on IDC and SAXS

The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.

Characteristics of dust acoustic waves in dissipative dusty plasma in the presence of trapped electrons

The formation and propagation of nonlinear dust acoustic waves（DAWs） as solitary and solitary/shock waves in an unmagnetized, homogeneous, dissipative and collisionless dusty plasma comprising negatively charged micron sized dust grains in the presence of free and trapped electrons with singly charged non-thermal positive ions is discussed in detail. The evolution characteristics of the solitary and shock waves are studied by deriving a modified Korteweg–de Vries–Burgers（mKdV–Burgers） equation using the reductive perturbation method. The mKdV–Burgers equation is solved considering the presence（absence） of dissipation. In the absence of dissipation the system admits a solitary wave solution, whereas in the presence of dissipation the system admits shock waves（both monotonic and oscillatory） as well as a combination of solitary and shock wave solutions. Standard methods of solving the evolution equation of shock（solitary） waves are used. The results are discussed numerically using standard values of plasma parameters. The findings may be useful for better understanding of formation and propagation of waves in astrophysical plasma.

Effects of Trapped Electrons on Off-axis Lower Hybrid Current Drive

The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized.

Quasi-coherent mode in core plasma of SUNIST spherical tokamak

A quasi-coherent(QC)mode was observed in the core region of low-density ohmic plasmas in Sino-UNIted Spherical Tokamak.In experiments on the QC mode,two sets of moveable Langmuir probes(LPs)were used to measure the local parameters including floating potential,electron temperature,electron density,and so on,as well as their profiles.To monitor the magnetohydrodynamic activities,a Mirnov probe was used to measure the poloidal magnetic fluctuation.The QC mode can be seen in the spectra of floating potential,but there is no similar peak in the spectra of magnetic fluctuation.Thus,the QC mode is probably electrostatic.By analyzing the electrostatic potential fluctuations from the LPs,the features of the QC mode including frequency,wavenumber,propagation direction,and dependence on collisionality are identified,which are consistent with the characteristics of dissipative trapped electron mode.

On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method

The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.

Effect of High-Gate-Voltage Stress on the Reverse Gated-Diode Current in LDD nMOSFET’s

The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET＇s is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias, lowering the maximal generation rate. The density of the effective trapped electrons affecting the effective drain bias is calculated with our model.

Colour Centres and Energy Transfer in BaF_(2-x)Cl_x∶Eu^(2+) Phosphors

The optical absorption spectra of BaF2-x Clx ：Eu^2＋ after ultraviolet （UV） light excitation were investigated. The differences between the absorption spectra after and before excitation （DAS） were observed. The DAS increase at both the high and the low energy side of F band in BaF2-xClx ： Eu^2 ＋ after 245 nm UV light excitation. The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres （association of F（Cl^-） centres）, whose absorption band matches the HeNe laser better, may explain the latter. In the write-in process, the transfer of electrons is via tunneling, In the readout process, the transfer of electrons captured in F（F^-） and Fa centres is more likely via tunneling, and that of F（Cl^- ） centres is more likely via conduction band.