High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier

A silicon carbide （SIC） based metal semiconductor field effect transistor （MESFET） is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lowerbuffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current （DC） and radio-frequency （RF） characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect （SCE） for gate length decreasing down to 60 nm （9-nm top barrier）. For a 70-nm gate length, the peak current gain cut-off frequency （fT） and power gain cut-off frequency （fmax） of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.

The Use of an Electron Microchannel as a Self-Extracting and Focusing Plasma Cathode Electron Gun

A new and simple type of electron gun is presented.Unlike conventional electron guns,which require a heated filament or extractor,accelerator and focusing electrodes,this gun uses the collimated electron microchannels of an inertial electrostatic confinement（IEC） discharge to achieve the same outcome.A cylindrical cathode is placed coaxially within a cylindrical anode to create the discharge.Collimated beams of electrons and fast neutrals emerge along the axis of the cylindrical cathode.This geometry isolates one of the microchannels that emerge in a negatively biased IEC grid.The internal operating pressure range of the gun is 35-190 m Torr.A small aperture separates the gun from the main vacuum chamber in order to achieve a pressure differential.The chamber was operated at pressures of 4-12 m Torr.The measured current produced by the gun was 0.1-3 m A（0.2-14 m A corrected measurement） for discharge currents of 1-45 m A and discharge voltages of 0.5-12 k V.The collimated electron beam emerges from the aperture into the vacuum chamber.The performance of the gun is unaffected by the pressure differential between the vacuum chamber and the gun.This allows the aperture to be removed and the chamber pressure to be equal to the gun pressure if required.

Highly efficient blue organic light-emitting diodes using various hole and electron confinement layers

In this Letter, blue phosphorescence organic light-emitting diodes （PHOLEDs） employ structures for electron and/or hole confinement; 1,3,5-tris（N-phenylbenzimiazole-2-yl）benzene is used as a hole confinement layer and tris-（phenylpyrazole）iridium [Ir（ppz）3] is utilized for an electron confinement layer （ECL）. The electrical and optical properties of the fabricated blue PHOLEDs with various carrier-confinement structures are analyzed. Structures with a large ehergy offset between the carrier confinement and emitting layers enhance the charge-carrier balance in the emitting region, resulting from the effective carrier confinement. The maximum external quantum efficiency of the blue PHOLEDs with the double-ECLs is 24.02% at 1500 cd/m^2 and its luminous efficiency is 43.76 cd/A, which is 70.47% improved compared to the device without a carrier-confinement layer.