Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

The stable sub-angstrom resolution of the aberration-corrected scanning transmission electron microscope(ACSTEM)makes it an advanced and practical characterization technique for all materials.Owing to the prosperous advancement in computational technology,specialized software and programs have emerged as potent facilitators across the entirety of electron microscopy characterization process.Utilizing advanced image processing algorithms promotes the rectification of image distortions,concurrently elevating the overall image quality to superior standards.Extracting high-resolution,pixel-level discrete information and converting it into atomic-scale,followed by performing statistical calculations on the physical matters of interest through quantitative analysis,represent an effective strategy to maximize the value of electron microscope images.The efficacious utilization of quantitative analysis of electron microscope images has become a progressively prominent consideration for materials scientists and electron microscopy researchers.This article offers a concise overview of the pivotal procedures in quantitative analysis and summarizes the computational methodologies involved from three perspectives:contrast,lattice and strain,as well as atomic displacements and polarization.It further elaborates on practical applications of these methods in electronic functional materials,notably in piezoelectrics/ferroelectrics and thermoelectrics.It emphasizes the indispensable role of quantitative analysis in fundamental theoretical research,elucidating the structure–property correlations in high-performance systems,and guiding synthesis strategies.

Innovative nanocrystal-based technologies for ceramic devices with novel electronic functions

There has been a great progress in the synthesis of a variety of inorganic colloidal nanocrystals(NCs)with highly controlled size and shape in the last decade.This achievement has promoted comprehensive researches on the fabrication and engineering of NC devices with novel structure and function with the aim of utilizing them in a wide area of applications,including electronics and optoelectronics,by using various NC assembling and patterning methods.However,colloidal NCs having been extensively investigated so far are mostly metals,semiconductors and magnetic materials,and only limited investigations on oxide NCs from a point of view of NC ceramic engineering have been done.Here,innovative nanocrystal-based technologies necessary for the fabrication of NC ceramic devices with novel and gigantic electronic functions,limiting the materials to perovskite oxides,and a new perspective on the future ceramic technology are discussed.

Effect of parallel resonance on the electron energy distribution function in a 60 MHz capacitively coupled plasma

In general,as the radio frequency(RF)power increases in a capacitively coupled plasma(CCP),the power transfer efficiency decreases because the resistance of the CCP decreases.In this work,a parallel resonance circuit is applied to improve the power transfer efficiency at high RF power,and the effect of the parallel resonance on the electron energy distribution function(EEDF)is investigated in a 60 MHz CCP.The CCP consists of a power feed line,the electrodes,and plasma.The reactance of the CCP is positive at 60 MHz and acts like an inductive load.A vacuum variable capacitor(VVC)is connected in parallel with the inductive load,and then the parallel resonance between the VVC and the inductive load can be achieved.As the capacitance of the VVC approaches the parallel resonance condition,the equivalent resistance of the parallel circuit is considerably larger than that without the VVC,and the current flowing through the matching network is greatly reduced.Therefore,the power transfer efficiency of the discharge is improved from 76%,70%,and 68%to 81%,77%,and 76%at RF powers of 100 W,150 W,and 200 W,respectively.At parallel resonance conditions,the electron heating in bulk plasma is enhanced,which cannot be achieved without the VVC even at the higher RF powers.This enhancement of electron heating results in the evolution of the shape of the EEDF from a biMaxwellian distribution to a distribution with the smaller temperature difference between high-energy electrons and low-energy electrons.Due to the parallel resonance effect,the electron density increases by approximately 4%,18%,and 21%at RF powers of 100 W,150 W,and 200 W,respectively.

Coupling Modeling for Functional Surface of Electronic Equipment

High performance electromechanical equipment is widely used in various fields, such as national defense, industry and so on [ 1]. In addition, the technical level of high performance electromechanical equipment is the embodiment of the national level of science and technology.

Interfacial Charge Transfer Induced Electronic Property Tuning of MoS_2 by Molecular Functionalization

The modulation of electrical properties of MoS_2 has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices.Herein,interfacial charge transfer induced electronic property tuning of MoS_2 are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements.A downward band-bending of MoS_2-related electronic states along with the decreasing work function,which are induced by the electron transfer from Cs overlayers to MoS_2,is observed after the functionalization of MoS_2 with Cs,leading to n-type doping.Meanwhile,when MoS_2 is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane(F_4-TCNQ),an upward band-bending of MoS_2-related electronic states along with the increasing work function is observed at the interfaces.This is attributed to the electron depletion within MoS_2 due to the strong electron withdrawing property of F_4-TCNQ,indicating p-type doping of MoS_2.Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS_2 and paves the way to optimize its performance in electronic and optoelectronic devices.

Impact of Arsenic Related Defects on Electronic Performance of ZrO2/GaAs:Density Functional Theory Calculations

Arsenic can diffuse into high-κ dielectrics during OaAs-based metal oxide semiconductor transistor process, which causes the degradation of gate dielectrics. To explore the origins of the degradation, we employ nonlocal B3LYP hybrid functional to study arsenic related defects in ZrO2. Via band alignments between the OaAs and ZrO2, we are able to determine the defect formation energy in the GaAs relative to the ZrO2 band gap and assess how they will affect the device performance. Arsenic at the interstitial site serves as a source of positive fixed charge while at the oxygen or zirconium substitutional site changes its charge state within the band gap of GaAs. Moreover, it is found that arsenic related defects produce conduction band offset reduction and gap states, which will increase the gate leakage current.

Abnormal transition of the electron energy distribution with excitation of the second harmonic in low-pressure radio-frequency capacitively coupled plasmas

The self-excited second harmonic in radio-frequency capacitively coupled plasma was significantly enhanced by adjusting the external variable capacitor.At a lower pressure of 3 Pa,the excitation of the second harmonic caused an abnormal transition of the electron energy probability function,resulting in abrupt changes in the electron density and temperature.Such changes in the electron energy probability function as well as the electron density and temperature were not observed at the higher pressure of 16 Pa under similar harmonic changes.The phenomena are related to the influence of the second harmonic on stochastic heating,which is determined by both amplitude and the relative phase of the harmonics.The results suggest that the self-excited high-order harmonics must be considered in practical applications of lowpressure radio-frequency capacitively coupled plasmas.

Density function theoretical study on the complex involved in Th atom-activated C–C bond in C2H6

Density functional theory（DFT） calculations are performed to investigate the reactivity of Th atom toward ethane C–C bond activation.A comprehensive description of the reaction mechanisms leading to two different reaction products is presented.We report a complete exploration of the potential energy surfaces by taking into consideration different spin states.In addition,the intermediate and transition states along the reaction paths are characterized.Total,partial,and overlap population density of state diagrams and analyses are also presented.Furthermore,the natures of the chemical bonding of intermediate and transition states are studied by using topological method combined with electron localization function（ELF） and Mayer bond order.Infrared spectrum（IR） is obtained and further discussed based on the optimized geometries.

Density Function Theory Study on the Reaction Mechanism of Cerium with Oxygen for Ce-bearing Aerosol Particle Formation

We obtained the reaction mechanism of cerium with oxygen by means of density functional theory (DFT) under the explosive or detonation situation. The energy level order of cerium was calculated and the potential energy profile was plotted. The properties of the bonds of all special structures in the reaction path were analyzed using the method of the electron localization function (ELF). The results indicate that the final reaction pathway can be expressed as Ce+O2→ FC→TS→IM→O-Ce-O, and the formation of Ce2O3 has not been found. In addition, the ELF diagram of the final product CeO2 shows that Ce bonds with both O atoms and the bond angles increase significantly.

Single-particle distribution function of a quantum dot system at finite temperature

In the present paper, we shall rigorously re-establish the result of the single-particle function of a quantum dot system at finite temperature. Unlike the proof given in our previous work （Phys. Rev. B 74 195414 （2006））, we take a different approach, which does not exploit the explicit expression of the Gibbs distribution function. Instead, we only assume that the statistical distribution function of the quantum dot system is thermodynamically stable. As a result, we are able to show clearly that the electronic structure in the quantum dot system is completely determined by its thermodynamic stability. Furthermore, the weaker requirements on the statistical distribution function also make it possible to apply the same method to the quantum dot systems in non-equilibrium states.

High Heat Flux Testing of B_4C/Cu and SiC/Cu Functionally Graded Materials Simulated by Laser and Electron Beam

B4C, SiC and C, Cu functionally graded-materials (FGMs) have been developed by plasma spraying and hot pressing. Their high-heat flux properties have been investigated by high energy laser and electron beam for the simulation of plasma disruption process of the future fusion reactors, And a study on eroded products of B4C/Cu FGM under transient thermal load of electron beam was performed. In the experiment, SEM and EDS analysis indicated that B4C and SiC were decomposed, carbon was preferentially evaporated under high thermal load, and a part of Si and Cu were melted, in addition, the splash of melted metal and the particle emission of brittle destruction were also found. Different erosive behaviors of carbon-based materials (CBMs) caused by laser and electron beam were also discussed.

Analysis of electron energy distribution function in a magnetically filtered complex plasma

The electron energy distribution function （EEDF） for a magnetically filtered dusty plasma is studied in a dusty double plasma device where the electron energy can be varied from 0.15 eV to ～ 2.8 eV and plasma density from 10 6 cm-3 to 10 9cm-3 . The characteristics of EEDF for these ranges of plasma parameters are investigated in a pristine plasma as well as in a dusty plasma. The results show that in the presence of dust, there is a drastic modification in EEDF patterns in a plasma with higher electron temperature and density than those in a low temperature and low density plasma produced by the magnetic filter.

The Influence of Magnetic Turbulence on the Electron Distribution Function in LHCD Plasma

A conservative transport operator in space (v//,r) and moment equations are used to describe the combined effects of a stochastic magnetic field and a radial ambipolar electric field on the electrons. The transport operator is coupled with Fokker-planck and Ohmic heating terms to compute the electron distribution function. A physical picture exhibits the possible importance of the turbulent magnetic field on the suprathermal electrons, which may be concerned with plasma confinement.

Theoretical Study on the Optical Properties for 2,7- and 3,6-Linked Carbazole Trimers by Time-dependent Density Functional Theory

Electronic properties, such as HOMO and LUMO energies, band gaps, ionization potential （IP） and electron affinity （EA） of 2,7- and 3,6-1inked carbazole trimers, two conjugated oligomcrs with different linkages of carbazole, were studicd by the density functional theory with Becke-Lee-Young-Parr composite exchange correlation functional （B3LYP）. The absorption spectra of these compounds were also investigated by time-dependent density functional theory （TD-DFT） with 6-3 IG＊ basis set. The calculated results indicated that the HOMO and LUMO of the 2,7- and 3,6-1inked carbazole trimers are both slightly destabilized on going from methyl substitution to sec-butyl substitution. Both IP and EA exhibit their good hole-transporting but poor electronaccepting ability. The presence of alkyl groups on the nitrogen atoms does not affect the intra-chain electronic delocalization along the molecular frame. Thus no significant effect on the band gap and absorption spectra of compounds has been found.

Photon-assisted electronic and spin transport through two T-shaped three-quantum-dot molecules embedded in an Aharonov-Bohm interferometer

We investigate the time-modulated electronic and spin transport properties through two T-shaped three-quantum-dot molecules embedded in an Aharonov-Bohm（A-B） interferometer. By using the Keldysh non-equilibrium Green＇s function technique, the photon-assisted spin-dependent average current is analyzed. The T-shaped three-quantum-dot molecule A-B interferometer exhibits excellent controllability in the average current resonance spectra by adjusting the interdot coupling strength, Rashba spin-orbit coupling strength, magnetic flux, and amplitude of the time-dependent external field.Efficient spin filtering and multiple electron-photon pump functions are exploited in the multi-quantum-dot molecule A-B interferometer by a time-modulated external field.

Structural, Electronic and Optical Properties of Te-Doped GaAs Nanowires： the First Principles Study

The first-principles calculations have been performed to determine the effects of Te doping to the structural, electronic, and optical properties of Ga As NWs. The calculated formation energies show that the single Te energetically prefers to substitute the core Ga（Ef = 0.4111 eV） under As-rich conditions of Ga As nanowires, while on surface, the single Te tends to substitute the surface As site. With increasing the Te concentration, the favorable substitution sites are 2Te–Ga–A and 3Te–Ga–D. Thus, the stability of the structure of the electronic structure and optical properties are discussed.

Theoretical calculations of structural, electronic, and elastic properties of CdSe_(1-x)Te_x:A first principles study

The plane wave pseudo-potential method was used to investigate the structural, electronic, and elastic properties of Cd Se_（1-x）Te_x in the zinc blende phase. It is observed that the electronic properties are improved considerably by using LDA ＋ U as compared to the LDA approach. The calculated lattice constants and bulk moduli are also comparable to the experimental results. The cohesive energies for pure Cd Se and Cd Te binary and their mixed alloys are calculated. The second-order elastic constants are also calculated by the Lagrangian theory of elasticity. The elastic properties show that the studied material has a ductile nature.

Size Effect on the Raman Spectra and Electronic Structure of the Glycine-alanine Oligopeptide Chains

A theoretical study on oligopeptide chains of glycine-alanine by density functional theory（DFT） is given in this paper. Raman spectra of the oligopeptide chains are examined. The geometric structures, frontier orbital, energy gap, atomic charge distribution, density of states and chemical activity of the side chain are studied at the B3LYP/6-31G（d） level. Results show that, with the number of residues increasing, vibrations of typical functional groups present Raman frequency shift, and the energy gap is gradually reduced. The HOMO and LUMO focus on the amino and carboxyl at the ends of oligopeptides. It is helpful for oligopeptides to self-assemble into chains. In addition, different residues（glycine or alanine） at the ends of chains result in the even-odd effect of orbital energy in the growth process. The size effects of physical and chemical properties only exist when the oligopeptides are shorter, and the phenomenon disappeared as the chain continues to grow.

Orbital electronic heat capacity of hydrogenated monolayer and bilayer graphene

The tight-binding Harrison model and Green＇s function approach have been utilized in order to investigate the contribution of hybridized orbitals in the electronic density of states（DOS） and electronic heat capacity（EHC） for four hydrogenated structures, including monolayer chair-like, table-like, bilayer AA- and finally AB-stacked graphene. After hydrogenation, monolayer graphene and bilayer graphene are behave as semiconducting systems owning a wide direct band gap and this means that all orbitals have several states around the Fermi level. The energy gap in DOS and Schottky anomaly in EHC curves of these structures are compared together illustrating the maximum and minimum band gaps are appear for monolayer chair-like and bilayer AA-stacked graphane, respectively. In spite of these, our findings show that the maximum and minimum values of Schottky anomaly appear for hydrogenated bilayer AA-stacked and monolayer table-like configurations, respectively.

Diagnosing the Fine Structure of Electron Energy Within the ECRIT Ion Source

The ion source of the electron cyclotron resonance ion thruster （ECRIT） extracts ions from its ECR plasma to generate thrust, and has the property of low gas consumption （2 seem, standard-state cubic centimeter per minute） and high durability. Due to the indispensable effects of the primary electron in gas discharge, it is important to experimentally clarify the electron energy structure within the ion source of the ECRIT through analyzing the electron energy distribution function （EEDF） of the plasma inside the thruster. In this article the Langmuir probe diagnosing method was used to diagnose the EEDF, from which the effective electron temperature, plasma density and the electron energy probability function （EEPF） were deduced. The experimental results show that the magnetic field influences the curves of EEDF and EEPF and make the effective plasma parameter nonuniform. The diagnosed electron temperature and density from sample points increased from 4 eV/2 ×10^16 m-3 to 10 eV/4×10^16 m-3 with increasing distances from both the axis and the screen grid of the ion source. Electron temperature and density peaking near the wall coincided with the discharge process. However, a double Maxwellian electron distribution was unexpectedly observed at the position near the axis of the ion source and about 30 mm from the screen grid. Besides, the double Maxwellian electron distribution was more likely to emerge at high power and a low gas flow rate. These phenomena were believed to relate to the arrangements of the gas inlets and the magnetic field where the double Maxwellian electron distribution exits. The results of this research may enhance the understanding of the plasma generation process in the ion source of this type and help to improve its performance.