A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOl MOSFET devices. It i...A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOl MOSFET devices. It is demonstrated in theory that the output voltage signal is proportional to the electric field E, the temperature drift is about zero when the temperature is in the range from 200 to 400 K, and the doping concentration is in the range from 1 × 10^14 to 1 × 10^16 cm^-3. The experiment results indicate that the resolution of the sensor is about 3.27 mV for a 1000 V/m electric field at 300 K, and the voltage drift by an amount is about 47 V/m field signal when the degree temperature is in the range from 300 to 370 K, which is much smaller than the current drift of a single MOSFET which is about 10000 V/m field signal.展开更多
In this paper,the design and experimental results for a novel high-stability sounding electrostatic field micro sensor are presented.By means of hermetic chip sealing,digital weak signal demodulation unit,and probe se...In this paper,the design and experimental results for a novel high-stability sounding electrostatic field micro sensor are presented.By means of hermetic chip sealing,digital weak signal demodulation unit,and probe sensor structure design,harsh environmental adaptation problems such as low temperature,high humidity,low air pressure,waterfall are solved.The sensor has a high resolution of 14 V/m,a wide measurement range of±100 kV/m,and is proved to have superior stability and performance in sounding electric field experiments than traditional sensors under different kinds of weather.展开更多
This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO_2 layer.Compared with the CO_2 critical point release meth...This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO_2 layer.Compared with the CO_2 critical point release method,it significantly improves the device surface cleanliness and shortens the process flow.The impurity on the base layer is analyzed.The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice.This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors,gyroscopes,and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.展开更多
文摘A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOl MOSFET devices. It is demonstrated in theory that the output voltage signal is proportional to the electric field E, the temperature drift is about zero when the temperature is in the range from 200 to 400 K, and the doping concentration is in the range from 1 × 10^14 to 1 × 10^16 cm^-3. The experiment results indicate that the resolution of the sensor is about 3.27 mV for a 1000 V/m electric field at 300 K, and the voltage drift by an amount is about 47 V/m field signal when the degree temperature is in the range from 300 to 370 K, which is much smaller than the current drift of a single MOSFET which is about 10000 V/m field signal.
基金Supported by the National High Technology Research and Development Program of China(863 Program,2011AA040405)the National Natural Science Foundation of China(No.61201078,No.61302032,No.61327810).
文摘In this paper,the design and experimental results for a novel high-stability sounding electrostatic field micro sensor are presented.By means of hermetic chip sealing,digital weak signal demodulation unit,and probe sensor structure design,harsh environmental adaptation problems such as low temperature,high humidity,low air pressure,waterfall are solved.The sensor has a high resolution of 14 V/m,a wide measurement range of±100 kV/m,and is proved to have superior stability and performance in sounding electric field experiments than traditional sensors under different kinds of weather.
基金supported by the National High Technology Research and Development Program of China(No.2011AA040405)the National Natural Science Foundation of China(Nos.61101049,61201078)
文摘This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO_2 layer.Compared with the CO_2 critical point release method,it significantly improves the device surface cleanliness and shortens the process flow.The impurity on the base layer is analyzed.The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice.This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors,gyroscopes,and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.
