期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Study on stability of hydrogenated amorphous silicon films 被引量:2
1
作者 朱秀红 陈光华 +5 位作者 张文理 丁毅 马占洁 胡跃辉 何斌 荣延栋 《Chinese Physics B》 SCIE EI CAS CSCD 2005年第11期2348-2351,共4页
Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour d... Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results. 展开更多
关键词 hydrogenated amorphous silicon (a-Si:H) films PHOTOSENSITIVITY STABILITY microstructure hydrogen elimination (HE) model
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部