Green Vertical‑Cavity Surface‑Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Interface engineering yields efficient perovskite light-emitting diodes

Metal-halide perovskites(MHPs)have emerged as a new class of semiconductors used in perovskite solar cells(PSCs)[1-5],perovskite light-emitting diodes(PeLEDs)[6-12],photo/X-ray detectors[13-16],and memristors[17,18].Pe LEDs can emit different light with high purity[19,20].

Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters

We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92.

Regulation of different light conditions for efficient biomass production and protein accumulation of Spirulina platensis

Light plays an important role in the photosynthesis and metabolic process of microalgae.However,how different light conditions regulate the biomass production and protein accumulation of microalgae is mostly unknown.In this study,the influence of different light conditions,including light colors,densities,and light:dark cycles on the cell growth and biochemical composition of Spirulina platensis was symmetrically characterized.Under different colored lights,S.platensis all shows an increase trend within the increased light intensity ranges;however,each showing different optimal light intensities.At the same light intensity,different colored lights show different growth rate of S.platensis following the sequence of red>white>green>yellow>blue.The maximum growth rate and protein accumulation were determined as 21.88 and 5.10 mg/(L·d)when illuminated under red LED.The energy efficiency of different light sources was calculated and ranked as red>white>blue≈green>yellow.Transcriptomic analysis suggests that red light can promote cell growth and protein accumulation by upregulating genes related to photosynthesis,carbon fixation,and C-N metabolism pathways.This study provides a conducive and efficient way to promote biomass production and protein accumulation of S.platensis by regulating light conditions.

Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off

Boron−nitrogen doped multiple resonance(BN-MR)emitters,characterized by B−N covalent bonds,offer distinctive advantages as pivotal building blocks for facile access to novel MR emitters featuring narrowband spectra and high efficiency.However,there remains a scarcity of exploration concerning synthetic methods and structural derivations to expand the library of novel BN-MR emitters.Herein,we present the synthesis of a BN-MR emitter,tCz[B−N]N,through a one-pot borylation reaction directed by the amine group,achieving an impressive yield of 94%.The emitter is decorated by incorporating two 3,6-di-tbutylcarbazole(tCz)units into a B−N covalent bond doped BN-MR parent molecule via para-C−π−D and para-N−π−D conjugations.This peripheral decoration strategy enhances the reverse intersystem crossing process and shifts the emission band towards the pure green region,peaking at 526 nm with a narrowband full-width at half maximum(FWHM)of 41 nm.Consequently,organic light emitting diodes(OLEDs)employing this emitter achieved a maximum external quantum efficiency(EQEmax)value of 27.7%,with minimal efficiency roll-off.Even at a practical luminance of 1000 cd·m^(−2),the device maintains a high EQE value of 24.6%.

Lateral Oxidation in Vertical Cavity Surface Emitting Lasers

Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL. Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.

Major regulatory factors for reproductive performances of female chickens

The reproductive performance of female chickens is critical for determining the efficiency of production and productivity and thus profitability.Studies have shown that the reproductive performance of female chickens is mainly regulated by the feed,hormones,genes,and light conditions.Herein,we review the major factors regulating female chicken reproductive performance and assess the reproductive organs and their functions.In the current review,we highlight how the interconnections of hormones,candidate genes,and photo-stimulation regulate female chicken reproductive hormones and thus regulate the reproductive organ performance.In this regard,the roles of main hormones[gonadotropinreleasing hormone(GnRH)and genes(GnRH-Ⅰ)]in regulating sexual maturation and ovarian development and maintenance by influencing the survival and function of follicular granulosa cells were also reviewed.In addition,the current review also highlights how feeding female chickens with diets and artificial light-emitting diodes(LEDs)support the effective functioning of their reproductive capacity through the stimulation of sexual maturity at an appropriate age and regeneration of aged reproductive organs.

Ion emission from warm dense matter produced by irradiation with a soft x-ray free-electron laser

We report on an experiment performed at the FLASH2 free-electron laser(FEL)aimed at producing warm dense matter via soft x-ray isochoric heating.In the experiment,we focus on study of the ions emitted during the soft x-ray ablation process using time-of-flight electron multipliers and a shifted Maxwell–Boltzmann velocity distribution model.We find that most emitted ions are thermal,but that some impurities chemisorbed on the target surface,such as protons,are accelerated by the electrostatic field created in the plasma by escaped electrons.The morphology of the complex crater structure indicates the presence of several ion groups with varying temperatures.We find that the ion sound velocity is controlled by the ion temperature and show how the ion yield depends on the FEL radiation attenuation length in different materials.

Annealing Temperature-Dependent Luminescence Color Coordination in Eu-Doped AlN Thin Films

AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices.

特色农产品优势区智慧化转型动力——基于珠海斗门的小样本调查分析

特色农产品优势区的智慧化转型是推动现代农业发展,实现乡村振兴的路径之一。本文以珠海市斗门区为例,通过对白蕉海鲈现代农业产业园的实地调研,应用Nvivo质性分析,依据“自然环境-市场-技术-制度(EMIT)”分析框架,讨论特色农产品优势区智慧化转型的动力,结果表明:1.珠海斗门特色农产品优势区的智慧化转型主要体现在养殖智能化、加工机械化和全链条数字化3个层面,整体尚处于初级发展阶段;2.智慧化转型与技术投入的成本收益直接相关,后者受到当地自然环境、市场与制度等因素影响,4因素在推动智慧化转型的同时也显示出现阶段的缺陷和困境;3.特色农产品优势区智慧化转型存在多因素互动牵制和地区差异性,这对其它特色农产品优势区具有一定的参考和启示意义。该结论旨在为其它地区提供参考与借鉴。

High Slope Efficiency and High Power 850nm Oxide-Confined Vertical Cavity Surface Emitting Lasers

High slope efficiency and high power selected oxide-confined 850nm VCSELs grown by MOCVD are reported.The slope efficiency and the threshold current respectively are 0 82mW/mA and 2 59mA with a 9μm diameter oxidation aperture at 25℃.The maximum power of 16mW is obtained at 23mA current bias.The minimum threshold current can be as low as 570μA with a 5μm diameter oxidation aperture at 25℃.The maximum saturated power is 5 5mW.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

White light-emitting diodes from perovskites

White light-emitting diodes(WLEDs),as key infrastructure,play an important role in the field of lighting and display.In the past few decades,many methods were developed to prepare WLEDs.A common strategy is to use blue LEDs to excite yttrium aluminum garnet(YAG)phosphors and generate composite white light,which is now the main technology for commercial lighting.In 2014,Nobel Prize in Physics was awarded to Nakamura et al.for their contribution to blue LEDs[1,2].

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Synthesis and luminescent properties of polycrystalline Gd_2(MoO_4)_3:Dy^(3+) for white light-emitting diodes

Polycrystalline Gd2(MoO4)3:Dy3+ phosphors have been synthesized by high temperature solid-state reaction method. The phosphors were characterized with X-ray diffractometer, thermogravimetric analysis and different scanning calorimeter, scanning electron microscopy, and photoluminescence spectrofluorimeter. Several peaks at 351, 389, 425, 452, and 472 nm appeared in photoluminescence excitation spectrum, which matched well with the emission of the ultraviolet (UV) and blue-light emitting diode (LED) chips. Upon excitation at 389 nm UV light, intense emissions centered at 484, 575 and 668 nm were attributed to the transitions of 4F9/2→6H15/2, 4F9/2→6H13/2 and 4F9/2→6H11/2 of Dy3+, respectively. The chromaticity coordinates and correlative color temperatures have been calculated and presented in the Commission International de I’Eclairage (CIE) diagrams. The results indicated that Gd1.9(MoO4)3:Dy0.13+ with CIE coordinates of (x=0.38, y=0.41) and the correlative color temperature of 4134 K is a potential candidate for white LEDs.

A High-Speed Bi-Directional Visible Light Communication System Based on RGB-LED

In this paper, we propose and experimentally demonstrate a bi-directional indoor communication system based on visible light RGB-LED. Spectrally efficient modulation formats （QAM-OFDM）, advanced digital signal processing, pre- and post- equalization are adopted to compensate the severe frequency response of indoor channel. In this system, we utilize red-green-blue Light emitting diodes （LEDs）, of which each color can be used to carry different signals. For downlink, the low frequencies of each color are used while for uplink, the high frequencies are used. The overall data rate of downlink and uplink are 1.15-Gb/s and 300-Mb/s. The bit error ratios （BERs） for all channels after 0.7 m indoor delivery are below pre-forward- error-correction （pre-FEC） threshold of 3.8×10-3. To the best of our knowledge, this is the highest data rate in bi-directional visible light communication system.

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes

Solution-processed metal halide perovskites (MHPs) have received significant interest for cost-effective, high-performance optoelectronic devices. In addition to the great successes in photovoltaics, their excellent luminescence and charge transport properties also make them promising for light emitting diodes (LEDs). To achieve high-efficiency perovskite LEDs (PeLEDs), extensive efforts have been carried out to enhance radiative recombination rates by confining the electrons and holes. In addition to enhancing radiative recombination rates, it is equally important to decrease the non-radiative recombination for improving the device performance. Passivation of the defects could be an efficient way for reducing the non-radiative recombination.