Coupled bending-torsion vibration of a homogeneous beam with a single delamination subjected to axial loads and static end moments

Delaminations in structures may significantly reduce the stiffness and strength of the structures and may affect their vibration characteristics. As structural components, beams have been used for various purposes, in many of which beams are often subjected to axial loads and static end moments. In the present study, an analytical solution is developed to study the coupled bending-torsion vibration of a homogeneous beam with a single delamination subjected to axial loads and static end moments. Euler-Bernoulli beam theory and the ＂free mode＂ assumption in delamination vibration are adopted. This is the first study of the influences of static end moments upon the effects of delaminations on natural frequencies, critical buckling loads and critical moments for lateral instability. The results show that the effects of delamination on reducing natural frequencies, critical buckling load and critical moment for lateral instability are aggravated by the presence of static end moment. In turn, the effects of static end moments on vibration and instability characteristics are affected by the presence of delamination. The analytical results of this study can serve as a benchmark for finite element method and other numerical solutions.

A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process

A radio frequency （RF） receiver frontend for single-carrier ultra-wideband （SC-UWB） is presented. The front end employs direct-conversion architecture, and consists of a differential low noise amplifier （LNA）, a quadrature mixer, and two intermediate frequency （IF） amplifiers. The proposed LNA employs source inductively degenerated topology. First, the expression of input impedance matching bandwidth in terms of gate-source ca- pacitance, resonant frequency and target Sll is given. Then, a noise figure optimization strategy under gain and power constraints is proposed, with consideration of the integrated gate inductor, the bond-wire inductance, and its variation. The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band, and has two gain modes to obtain a higher receiver dynamic range. The mixer uses a double bal- anced Gilbert structure. The front end is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.43 mm2. In high and low gain modes, the measured maximum conversion gain are 42 dB and 22 dB, input 1 dB compression points are -40 dBm and -20 dBm, and Sll is better than -18 dB and -14.5 dB. The 3 dB IF bandwidth is more than 500 MHz. The double sideband noise figure is 4.7 dB in high gain mode. The total power consumption is 65 mW from a 1.8 V supply.

Performanceanalysisofalowpowerlownoisetunablebandpassfilterformultiband RF front end

This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented.