Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

Experimental characterization of the removal efficiency and energy effectiveness of central air cleaners

This study assessed six commercially available in-duct air cleaning devices which are designed to be mounted in the central ventilation system of offices or commercial buildings.The selected devices use different air cleaning technologies:mechanical filtration,electrostatic precipitation,gas filtration,ionization/cold plasma,photocatalytic oxidation(PCO)and catalysis under UV light.They were tested against particles,a mixture of volatile organic compounds containing acetone,acetaldehyde,toluene,heptane and formaldehyde,and two bio-contaminants:Aspergillus brasiliensis(fungus)and Staphylococcus epidermidis(bacteria).Two different test rigs were used.The single pass efficiency of each device was determined for three airflow rates,corresponding to face velocities ranging from 0.9 to 2.7 m/s,and two sets of temperature and humidity that are representative of indoor air conditions in wintertime and summertime.The concentration of the chal-lenge volatile organic compounds was also varied in the 30 to 100μg/m^(3)range as a way to characterize their influence on efficiency at realistic concentration levels for non-industrial buildings.Measurements of ozone and formaldehyde concentration downstream of the air cleaners were carried out to determine the emission rate of by-products into the air stream.Finally,the energy issue was addressed by measuring the electric power drawn and pressure loss of the devices.The results showed that two devices,namely a radiant catalytic ionizer and a plasma ionizer,had a very low single pass efficiency against all the challenge pollutants.The association of the plasma ionizer and the electrostatic precipitator did not produce a synergetic effect between the two technologies either,contrary to what their manufacturer claims.Finally,three of the six devices tested were effective in terms of pollutant removal,but only two had an acceptable energy effectiveness in view of their use in low or zero energy buildings.Their energy effectiveness ranged from a few thousand m^(3)/kWh for VOCs at the highest airflow rate(3600 m^(3)/h),to more than 60000 m^(3)/kWh for particles and bio-contaminants at 1200 or 1600 m^(3)/h.These results are at least one order of magnitude higher than the majority of stand-alone air cleaners.Moreover,they suggest that optimal IAQ and energy conditions can be achieved if variable air volume control methods are used to maintain indoor temperature and humidity.

Critical Success Factors Influencing the Implementation of Sustainable Energy System in Uganda: A Case of Inter-University Council of East Africa Energy Project at the Head Quarters in Kampala, Uganda

The widespread usage of clean and sustainable energy sources is leading to a significant transformation of the world’s energy systems. Over-reliance on only the national grid energy system has made institutions fail to sustain energy systems. The council is only connected to the national grid electricity supply system, with diesel generators as the only alternative, which is unhealthy and unsafe. Surprisingly, even with such alternatives, power shortages have persisted despite government efforts to provide a solution to the shortages by installing numerous off-grid systems. Due to such a situation, the council would construct a sustainable energy system as a remedy. Thus, the purpose of this study was to establish critical success factors influencing the implementation of a sustainable energy system at the Inter-University Council of East Africa (IUCEA) Head Quarters, Kampala-Uganda. A cross-sectional survey design was used;a sample size of 84 participants was selected. Questionnaire survey and interview methods were utilized. The study found that the most significant (p < 0.05) critical factors in the implementation of sustainable energy in institutions are;the use of innovative technologies and infrastructure, the use of efficient zero emissions for heating and cooling, integration of renewable energy use in the existing buildings, building and renovating in an energy-efficient way, integrating regional energy systems, improving energy efficiency in the buildings, enhanced zero emission power technologies, energy efficient equipment in place and stakeholder empowerment in energy management. This study concludes that institutions like;the Inter-University Council of East Africa (IUCEA) need to clearly state policies and actions of energy management. The roles and responsibilities of each member have to be clearly stated while capturing the activities involved in energy conservation, energy security and energy efficiency.

Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.

Influences of surface and flexoelectric polarization on the effective anchoring energy in nematic liquid crystal

The physical effects on surface and flexoelectric polarization in a weak anchoring nematic liquid crystal cell are investigated systematically. We derive the analytic expressions of two effective anchoring energies for lower and upper substrates respectively as well as their effective anchoring strengths and corresponding tilt angles of effective easy direction.All of these quantities are relevant to the magnitudes of both two polarizations and the applied voltage U. Based on these expressions, the variations of effective anchoring strength and the tilt angle with the applied voltage are calculated for the fixed values of two polarizations. For an original weak anchoring hybrid aligned nematic cell, it may be equivalent to a planar cell for a small value of U and has a threshold voltage. The variation of reduced threshold voltage with reduced surface polarization strength is also calculated. The role of surface polarization is important without the adsorptive ions considered.

Relation Between Sudden Sedimentation and Wind Energy in Outer Channel of Huanghua Port and Its Application in Binzhou Port

Based on the analysis of ocean dynamic condition and sediment environment, conclusions can be drawn that strong wind is an essential factor influencing sudden sedimentation in outer channel. Through theoretical analysis, it changes the complex process that wind raises wave, wave tilts sediment and current transports sediment into a comprehensive factor, and obtains mathematical formula between effective wind energy and the thickness of sudden sedimentation. The parametees in this formula are determined with field data of Huanghua Port. It may be used to predict siltation thickness and volume along the channel. By analyzing and comparing the difference in ocean hydrodynamic conditions and seabed material between Huanghua Port and Binzhou Port, the proposed formula can be used to predict sudden sedimentation in Binzhou Port and the calculated results is rehable. By predicting it on different combination plans among different recurrence in- tervals, entrance locations and channel classes, it provides references for the plane design of Binzhou Port.

EFFECT OF SURFACE ENERGY ON DISLOCATION-INDUCED FIELD IN HALF-SPACE WITH APPLICATION TO THIN FILM-SUBSTRATE SYSTEMS

In this work the elastic field of an edge dislocation in a half-space with the effect of surface energy has been obtained. The elastic field is then used to study the image force on the dislocation, the critical thickness for dislocation generation in epitaxial thin films with strain mismatch and the yielding strength of thin films on substrates. The results show that the image forces on the dislocation deviate from the conventional solutions when the distance of the dislocation from the free surface is smaller than several times of the characteristic length. Also due to the effect of surface energy, the critical thickness for dislocation generation is smaller than that predicted by the conventional elastic solutions and the extent of the deviation depends on the magnitude of mismatch strain. In contrast, the effect of surface energy on the yielding strength for many practical thin films can be neglected except for some soft ones where the characteristic length is comparable to the thickness.

Generation of Alfvén wave energy during magnetic reconnection in Hall MHD

The effect of the reconnection rate on the generation of Alfvén wave energy is systematically investigated using Hall magnetohydrodynamics（MHD）. It is well known that a decrease in magnetic energy is proportional to the reconnection rate. It is found that an instantaneous increase in Alfvén wave energy in unit Alfvén time is the square dependence on the reconnection rate. The converted Alfvén wave energy is strongly enhanced due to the large increase in the reconnection rate in Hall MHD. For solar-terrestrial plasmas, the maximum converted Alfvén wave energy in unit Alfvén time with the Hall effect can be over 50 times higher than that without the Hall effect during magnetic reconnection.

Temperature Effects on the Self-trapping Energy of a Polaron in a GaAs Parabolic Quantum Dot

The temperature and the size dependences of the self-trapping energy of a polaron in a GaAs parabolic quantum dot are investigated by the second order Rayleigh-Schrodinger perturbation method using the framework of the effective mass approximation. The numerical results show that the self-trapping energies of polaron in GaAs parabolic quantum dots shrink with the enhancement of temperature and the size of the quantum dot. The results also indicate that the temperature effect becomes obvious in small quantum dots

Bauschinger and size effects in thin-film plasticity due to defect-energy of geometrical necessary dislocations

The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations （GNDs） are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations （or pile-ups） moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

The collision energy effect on the stereodynamics of the Ca + HCl→CaCl + H reaction

The stereodynamics of the reaction of Ca ＋ HCl are calculated at three different collision energies based on the potential energy surface [Verbockhaven G et al. 2005 J. Chem. Phys. 122 204307] using quasi-classical trajectory theory. The polarization-dependent differential cross sections （PDDCSs） （2π/σ ）（dσ 00 /dω t ）, （2π/σ ）（dσ 20 /dωt ）, （2π/σ ）（dσ 22＋ /dωt ）, （2π/σ ）（dσ 21 /dω t ） and the distributions of P（θ r ）, P（φr ）, and P（θr ,φr ） are calculated. The results indicate that the rotational polarization of the CaCl product presents different characteristics for the different collision energies, and the effects of the collision energy on the vector potential, including the alignment, orientation, and PDDCSs, are not obvious.

Low-energy atomic displacement model of SRIM simulations

Radiation-induced atomic displacement damage is a pressing issue for materials.The present work investigates the number of atomic displacements using the Primary Knock-on Atom (PKA) energy E_(PKA)and threshold displacement energy E_(d)as two major parameters via lowenergy SRIM Binary Collision Approximation (BCA) full cascade simulations.It is found that the number of atomic displacements cannot be uniquely determined by E_(PKA)/E_(d )or E_(D) /E_(d)(E_(D) refers to the damage energy) when the energy is comparable with E_(d).The effective energy E_(D,eff)proposed in the present work allows to describing the number of atomic displacements for most presently studied monatomic materials by the unique variable E_(D,eff)/E_(d).Nevertheless,it is noteworthy that the BCA simulation damage energy depends on E_(d),whereas the currently used analytical method is independent of E_(d).A more accurate analytical damage energy function should be determined by including the dependence on E_(d).

ENERGY-LOSS FUNCTIONS DERIVED FROM REELS SPECTRA FOR ALUMINUM

The effective energy loss functions for Al have been derived from differential i nverse inelastic mean free path based on the extended Landau approach. It has be en revealed that the effective energy loss function is very close in value to th e theoretical surface energy loss function in the lower energy loss region but g radually approaches the theoretical bulk energy loss function in the higher ener gy loss region. Moreover, the intensity corresponding to surface excitation in e ffective energy loss functions decreases with the increase of primary electron e nergy. These facts show that the present effective energy loss function describe s not only surface excitation but also bulk excitation. At last, REELS spectra s imulated by Monte Carlo method based on use of the effective energy loss functio ns has reproduced the experimental REELS spectra with considerable success.

THEORETICAL INVESTIGATION OF COLLISION ENERGY EFFECT ON REACTION O(?) BARIUM WITH METHYL BROMIDE

The reac dynamics on Ba+BrCH_3→BaBr+CH_3 has been investigated in the first proposed potential energy surface of the generalized LEPS type,using the quasiclassical trajectory method.In simulation of the conditions in molecular beam experiments,the results of the present study show significant effect of the reagent collision energy on the dynamics of the reaction,and are in good agreement with the experimental ones.

Comparative Study of Energy Quantization Approaches in Nanoscale MOSFETs

An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS （metal oxide semiconductor） structures using variation and triangular well approaches.Accurate modeling of the inversion charge density using the continuous surface potential equations has been done.No approximation has been taken to model the inversion layer quantization process.The results show that the variation approach describes inversion layer quantization process accurately as it matches well with the BSIM 5 （Berkeley short channel insulated gate field effect transistor model 5） results more closely compared with triangular well approach.

Strong Interaction Effect on Jet Energy Loss with Detailed Balance

The strong force effect on gluon distribution of quark-gluon plasma and its influence on jet energy loss with detailed balance are studied. We solve the possibility equation and obtain the value of non-extensive parameter q. In the presence of strong interaction, more gluons stay at low-energy state than the free gluon case. The strong interaction effect is found to be important for jet energy loss with detailed balance at intermediate jet energy. The energy gain via absorption increases with the strong interaction. This will affect the nuclear modification factor RAA and the parameter of q at intermediate jet energy.

Temperature Effects on Information Capacity and Energy Efficiency of Hodgkin-Huxley Neuron

Recent experimental and theoretical studies show that energy efficiency, which measures the amount of infor- mation processed by a neuron with per unit of energy consumption, plays an important role in the evolution of neural systems. Here we calculate the information rates and energy efficieneies of the Hodgkin-Huxley （HH） neuron model at different temperatures in a noisy environment. It is found that both the information rate and energy efficiency are maximized by certain temperatures. Though the information rate and energy efficiency cannot be maximized simultaneously, the neuron holds a high information processing capacity at the tempera- ture corresponding to the maximal energy efficiency. Our results support the idea that the energy efficiency is a selective pressure that influences the evolution of nervous systems.

The Effects of High Energy and Micronutrient Supplementation on Iron Status in Nutritionally at Risk Infants

The study assessed the effects of supplementary feeding over 180 consecutive days on iron status of infants and toddlers at six tea plantation in West Java, Indonesia. The design used was a clinical trial: two eohorts (i.e., 12 and 18 months old children) and three treatment groups (i.e., energy + micronutrient, micronutrient alone, and placebo) per cohort. Every day except Sunday, the infants attended day-care centers. Twenty four centers and 136 infants were selected. The infants were screened for weight and length and those meeting the criteria (i.e., <-1 SD of length-for-age, and between -1 and -2 SD of weight-for-length of the NCHS reference) were included. The experimental unit was the day-care centers (DCC), where each DCC was randomly assigned to one of the three treatment. As expected, groups of energy + micronutrient and micronutrient alone of the 12 months cohort experienced a significant upward shift in hemoglobin, ferritin and TS and a downward change in FEP, while the values for the group of placebo remain about the same as at base line. In the first 6 month of treatments, the ANOVA for each iron indicator yielded significant main effects of treatment (P<0.01) and for Hb with (P =0.059) on 12 months cohort. On the other hand, the main effects of treatment on hemoglobin, TS, ferritin and FEP were not significant for the 18 months cohort. In the second 6 month of treatments, the only significant of the treatment effect (P<0.01) was in serum ferritin on 18-month cohort. Under these circumstances, energy has a positive role in improving iron stores. It is likely that the equilibrium of hemoglobin and each iron indicators were reached in 6 months of treatment except ferritin still continued to increase up to 12 month. The effects of treatment on the improvement of iron status was stronger in 12 months than in 18 months

Effect of Phantom Dark Energy on Holographic Thermalization

Holographic thermalization for a black hole surrounded by phantom dark energy is probed. The result shows that the smaller the phantom dark energy parameter is, the easier the is plasma to thermalize as the chemical potential is fixed, the larger the chemical potential is, and the harder the plasma is to thermalize as the dark energy parameter is fixed. The thermalization velocity and thermalization acceleration are presented by fitting the thermalization curves.