We investigate the strain in various Ge-on-insulator （GeOI） micro-structures induced by three phase-change maferials （PCMs） （Ge2Sb2Te5, Sb2Te3, GeTe） deposited. The PCMs could change the phase from amorphous sta...We investigate the strain in various Ge-on-insulator （GeOI） micro-structures induced by three phase-change maferials （PCMs） （Ge2Sb2Te5, Sb2Te3, GeTe） deposited. The PCMs could change the phase from amorphous state to polycrystalline state with a low temperature thermal annealing, resulting in an intrinsic contraction in the PCM films. Raman spectroscopy analysis is performed to compare the strain induced in the GeOI micro- structures by various PCMs. By comparison, Sb2 Tea could induce the largest amount of tensile strain in the GeOI micro-structures after the low temperature annealing. Based on the strain calculated from the Raman peak shifts, finite element numerical simulation is performed to calculate the strain-induced electron mobility enhancement for Ge n-MOSFETs with PCM liner stressors. With the adoption of Sb2 Te3 liner stressor, 22% electron mobility enhancement at Xinv=1×10^13cm^-2 could be achieved, suggesting that PCM especially Sb2 Te3 liner stressor is a promising technique for the performance enhancement of Ge MOSFETs.展开更多
The thermal-mechanical coupling finite element method(FEM)was usedto simulate a non-isothermal sheet metal extrusion process. On thebasis of the finite plasticity consistent with multiplicativedecomposition of the def...The thermal-mechanical coupling finite element method(FEM)was usedto simulate a non-isothermal sheet metal extrusion process. On thebasis of the finite plasticity consistent with multiplicativedecomposition of the deformation gradient, the enhanced as- sumedstrain(EAS)FEM was applied to carry out the numerical simulation. Inorder to make the computation reliable ad avoid hour- glass mode inthe EAS element under large compressive strains, an alterative formof the original enhanced deformation gradient was employed. Inaddition, reduced factors were used in the computation of the elementlocal internal parameters and the enhanced part of elementalstiffness.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61376097,61504120U1609213,the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No 20130091110025
文摘We investigate the strain in various Ge-on-insulator （GeOI） micro-structures induced by three phase-change maferials （PCMs） （Ge2Sb2Te5, Sb2Te3, GeTe） deposited. The PCMs could change the phase from amorphous state to polycrystalline state with a low temperature thermal annealing, resulting in an intrinsic contraction in the PCM films. Raman spectroscopy analysis is performed to compare the strain induced in the GeOI micro- structures by various PCMs. By comparison, Sb2 Tea could induce the largest amount of tensile strain in the GeOI micro-structures after the low temperature annealing. Based on the strain calculated from the Raman peak shifts, finite element numerical simulation is performed to calculate the strain-induced electron mobility enhancement for Ge n-MOSFETs with PCM liner stressors. With the adoption of Sb2 Te3 liner stressor, 22% electron mobility enhancement at Xinv=1×10^13cm^-2 could be achieved, suggesting that PCM especially Sb2 Te3 liner stressor is a promising technique for the performance enhancement of Ge MOSFETs.
基金[This work was financially supported by a research grant from the Hong Kong Polytechnic University (No.G-V694).]
文摘The thermal-mechanical coupling finite element method(FEM)was usedto simulate a non-isothermal sheet metal extrusion process. On thebasis of the finite plasticity consistent with multiplicativedecomposition of the deformation gradient, the enhanced as- sumedstrain(EAS)FEM was applied to carry out the numerical simulation. Inorder to make the computation reliable ad avoid hour- glass mode inthe EAS element under large compressive strains, an alterative formof the original enhanced deformation gradient was employed. Inaddition, reduced factors were used in the computation of the elementlocal internal parameters and the enhanced part of elementalstiffness.
