Epitaxial growth of ultrathin gallium films on Cd(0001)

Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.

Stiffness-tunable biomaterials provide a good extracellular matrix environment for axon growth and regeneration

Neuronal growth, extension, branching, and formation of neural networks are markedly influenced by the extracellular matrix—a complex network composed of proteins and carbohydrates secreted by cells. In addition to providing physical support for cells, the extracellular matrix also conveys critical mechanical stiffness cues. During the development of the nervous system, extracellular matrix stiffness plays a central role in guiding neuronal growth, particularly in the context of axonal extension, which is crucial for the formation of neural networks. In neural tissue engineering, manipulation of biomaterial stiffness is a promising strategy to provide a permissive environment for the repair and regeneration of injured nervous tissue. Recent research has fine-tuned synthetic biomaterials to fabricate scaffolds that closely replicate the stiffness profiles observed in the nervous system. In this review, we highlight the molecular mechanisms by which extracellular matrix stiffness regulates axonal growth and regeneration. We highlight the progress made in the development of stiffness-tunable biomaterials to emulate in vivo extracellular matrix environments, with an emphasis on their application in neural repair and regeneration, along with a discussion of the current limitations and future prospects. The exploration and optimization of the stiffness-tunable biomaterials has the potential to markedly advance the development of neural tissue engineering.

Telencephalic stab wound injury induces regenerative angiogenesis and neurogenesis in zebrafish:unveiling the role of vascular endothelial growth factor signaling and microglia

After brain damage,regenerative angiogenesis and neurogenesis have been shown to occur simultaneously in mammals,suggesting a close link between these processes.However,the mechanisms by which these processes interact are not well understood.In this work,we aimed to study the correlation between angiogenesis and neurogenesis after a telencephalic stab wound injury.To this end,we used zebrafish as a relevant model of neuroplasticity and brain repair mechanisms.First,using the Tg(fli1:EGFP×mpeg1.1:mCherry)zebrafish line,which enables visualization of blood vessels and microglia respectively,we analyzed regenerative angiogenesis from 1 to 21 days post-lesion.In parallel,we monitored brain cell proliferation in neurogenic niches localized in the ventricular zone by using immunohistochemistry.We found that after brain damage,the blood vessel area and width as well as expression of the fli1 transgene and vascular endothelial growth factor(vegfaa and vegfbb)were increased.At the same time,neural stem cell proliferation was also increased,peaking between 3 and 5 days post-lesion in a manner similar to angiogenesis,along with the recruitment of microglia.Then,through pharmacological manipulation by injecting an anti-angiogenic drug(Tivozanib)or Vegf at the lesion site,we demonstrated that blocking or activating Vegf signaling modulated both angiogenic and neurogenic processes,as well as microglial recruitment.Finally,we showed that inhibition of microglia by clodronate-containing liposome injection or dexamethasone treatment impairs regenerative neurogenesis,as previously described,as well as injury-induced angiogenesis.In conclusion,we have described regenerative angiogenesis in zebrafish for the first time and have highlighted the role of inflammation in this process.In addition,we have shown that both angiogenesis and neurogenesis are involved in brain repair and that microglia and inflammation-dependent mechanisms activated by Vegf signaling are important contributors to these processes.This study paves the way for a better understanding of the effect of Vegf on microglia and for studies aimed at promoting angiogenesis to improve brain plasticity after brain injury.

Transforming growth factor-beta 1 enhances discharge activity of cortical neurons

Transforming growth factor-beta 1(TGF-β1)has been extensively studied for its pleiotropic effects on central nervous system diseases.The neuroprotective or neurotoxic effects of TGF-β1 in specific brain areas may depend on the pathological process and cell types involved.Voltage-gated sodium channels(VGSCs)are essential ion channels for the generation of action potentials in neurons,and are involved in various neuroexcitation-related diseases.However,the effects of TGF-β1 on the functional properties of VGSCs and firing properties in cortical neurons remain unclear.In this study,we investigated the effects of TGF-β1 on VGSC function and firing properties in primary cortical neurons from mice.We found that TGF-β1 increased VGSC current density in a dose-and time-dependent manner,which was attributable to the upregulation of Nav1.3 expression.Increased VGSC current density and Nav1.3 expression were significantly abolished by preincubation with inhibitors of mitogen-activated protein kinase kinase(PD98059),p38 mitogen-activated protein kinase(SB203580),and Jun NH2-terminal kinase 1/2 inhibitor(SP600125).Interestingly,TGF-β1 significantly increased the firing threshold of action potentials but did not change their firing rate in cortical neurons.These findings suggest that TGF-β1 can increase Nav1.3 expression through activation of the ERK1/2-JNK-MAPK pathway,which leads to a decrease in the firing threshold of action potentials in cortical neurons under pathological conditions.Thus,this contributes to the occurrence and progression of neuroexcitatory-related diseases of the central nervous system.

Activation of adult endogenous neurogenesis by a hyaluronic acid collagen gel containing basic fibroblast growth factor promotes remodeling and functional recovery of the injured cerebral cortex

The presence of endogenous neural stem/progenitor cells in the adult mammalian brain suggests that the central nervous system can be repaired and regenerated after injury.However,whether it is possible to stimulate neurogenesis and reconstruct cortical layers II to VI in non-neurogenic regions,such as the cortex,remains unknown.In this study,we implanted a hyaluronic acid collagen gel loaded with basic fibroblast growth factor into the motor cortex immediately following traumatic injury.Our findings reveal that this gel effectively stimulated the proliferation and migration of endogenous neural stem/progenitor cells,as well as their differentiation into mature and functionally integrated neurons.Importantly,these new neurons reconstructed the architecture of cortical layers II to VI,integrated into the existing neural circuitry,and ultimately led to improved brain function.These findings offer novel insight into potential clinical treatments for traumatic cerebral cortex injuries.

Epitaxial Growth of 150mm Silicon Epi\|Wafers for Advanced IC Applications

With the device feature's size miniaturization in very large scale integrated circuit and ultralarge scale integrated circuit towards the sub\|micron and beyond level, the next generation of IC device requires silicon wafers with more improved electrical characteristics and reliability as well as a high perfection of the wafer surface. Compared with the polished wafer with a relatively high density of crystal originated defects (e. g. COPs), silicon epi\|wafers can meet such high requirements. The current development of researches on the 150mm silicon epi\|wafers for advanced IC applications is described. The P/P\++ CMOS silicon epi\|wafers were fabricated on a PE2061 Epitaxial Reactor (made by Italian LPE Company). The material parameters of epi\|wafers, such as epi\|defects, uniformity of thickness and resistivity, transition width, and minority carrier generation lifetime for epi\|layer were characterized in detail. It is demonstrated that the 150mm silicon epi\|wafers on PE2061 can meet the stringent requirements for the advanced IC applications.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH 3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.

Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate

In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique

The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.

Epitaxial Growth of YSZ as Buffer Layers for High Tc Superconducting Films on Si Substrates

Epitaxial films of Yttria Stabilized Zirconia(YSZ) were successfully grown on Si substrates by RF magnetron sputter, the atomic structure and the lattice mismatch of YSZ/Si were presented. Auger electron spectroscopy, X ray diffraction and scanning

Simulation of multilayer homoepitaxial growth on Cu （100） surface

The processes of multilayer thin Cu films grown on Cu （100） surfaces at elevated temperature （250-400K） are simulated by mean of kinetic Monte Carlo （KMC） method, where the realistic growth model and physical parameters are used. The effects of small island （dimer and trimer） diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlic-Schwoebel （ES） barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu（100） system and an ES barrier EB 〉 0.125eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device applications.Similar to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth regions.The slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence bands.The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been identified.The growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth rate.Mg and Si doped GaN were also studied,and both p-and n-type materials were obtained.

Heteroepitaxial Growth and Characterization of 3C-SiC Films on Si Substrates Using LPVCVD

3C-SiC films have been deposited on Si （111） substrates by the low-pressure vertical chemical vapor deposition （LPVCVD） with gas mixtures of SiH4, Calls and H2. The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope （FESEM）. It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350℃. The X-ray diffraction （XRD） patterns show that the SiC films have good crystallinity and strong preferred orientation.The results of the high resolution transmission electron microscopy （HRTEM） image and the transmission electron diffraction （TED） pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra （XPS） further confirm the formation of SiC.

Synthesis of high grade octahedron diamond through epitaxial growth

The work was based on the relationship between the crystal structure and parameters of diamonds in the synthetic process, in which Ni Mn C powder catalyst was used. At first, the diamond crystals nucleated in a cubic octahedron morphology through controlling such synthetic parameters as temperature and pressure in a parameter region where cubic octahedron ctystals can be obtained. Then the diamond nuclei grew epitaxially into crystals with a perfect octahedron morphology through increasing the synthesis temperature and decreasing the synthesis pressure in a parameter region where octahedron crystals can be obtained.

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers

Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 1010 cm-2, almost double the conventional density(3.0 × 1010 cm-2).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.

High-Quality van der Waals Epitaxial CsPbBr_(3)Film Grown on Monolayer Graphene Covered TiO_(2)for High-Performance Solar Cells

Two-dimensional materials have been widely used to tune the growth and energy-level alignment of perovskites.However,their incomplete passivation and chaotic usage amounts are not conducive to the preparation of highquality perovskite films.Herein,we succeeded in obtaining higher-quality CsPbBr_(3)films by introducing large-area monolayer graphene as a stable physical overlay on top of TiO_(2)substrates.Benefiting from the inert and atomic smooth graphene surface,the CsPbBr_(3)film grown on top by the van der Waal epitaxy has higher crystallinity,improved(100)orientation,and an average domain size of up to 1.22μm.Meanwhile,a strong downward band bending is observed at the graphene/perovskite interface,improving the electron extraction to the electron transport layers(ETL).As a result,perovskite film grown on graphene has lower photoluminescence(PL)intensity,shorter carrier lifetime,and fewer defects.Finally,a photovoltaic device based on epitaxy CsPbBr_(3)film is fabricated,exhibiting power conversion efficiency(PCE)of up to 10.64%and stability over 2000 h in the air.

Epitaxial growth triggered core-shell Pd@RuP nanorods for high-efficiency electrocatalytic hydrogen evolution

Ru with Pt-like hydrogen bond strength,knockdown cost(~1/3 of Pt),and eximious stability is a competitive replacement for Pt-based catalysts towards the hydrogen evolution reaction(HER)in water splitting.The design of Ru-based catalysts via interface construction,crystal phase control,and specific light element doping to realize the impressive promotion of limited activity and stability remains challenging.Herein,we report the fabrication of Pd@RuP core-shell nanorods(NRs)via an epitaxial growth method,where ultrathin RuP shells extend the face-centered cubic(fcc)crystal structure and(111)plane of the Pd NRs core.Density functio nal theory results confirm that the core-s hell interface engineering and P doping synergistically accelerate electron transfer and moderate the d-band center to generate a suitable affinity for H*,thus optimizing HER kinetics.Compared with Pd@Ru NRs and Pt/C,the Pd@RuP NRs exhibit preferable electrocatalytic stability and superior activity with a low overpotential of 18 mV at 10 mA cm-2in the alkaline HER process.Furthermore,the integrated Pd@RuP//RuO2-based electrolyzer also displays a low operation potential of 1.42 V to acquire 10 mA cm-2,demonstrating great potential for practical water electrolysis.Our work presents an efficient avenue to design Ru-based electrocatalysts via epitaxial growth for extraordinary HER performance.

Epitaxial Growth of YBCO Thin Films on LaAlO_3 Substrate with CeO_2 Buffer Layer

By the r. f. magnetron sputtering method, the CeO_2 buffer layers were prepared on (100) LaAlO_3 sub-strates. The results of X-ray diffraction and Ф-scan indicated that the CeO_2 films were unique ( 100)-orientedand epitaxial. The YBa_2Cu_3O_(7-6)(YBCO) films, which were deposited on the CeO_2/LaAlO_3 by d. c. magnetronsputtering, exhibited transition temperatures of 89～91 K,and had critical current densities exceeding 10￣6 A/cm￣2 at 77 K in zero magnetic field.

Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin-orbit coupling,the quantum confinement,and surface effect.It was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h:from a topological semimetal(h>7.8 nm)to a topological insulator(7.8 nm>h>2.7 nm),then a quantum spin Hall(QSH)phase(2.7 nm>h>1.0 nm)and a topological trivial semiconductor(h<1.0 nm).Here,we report a comprehensive investigation on the epitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite(HOPG)substrate and the controllable thermal desorption to achieve their specific thickness.The morphology,thickness,atomic structure,and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy(SEM),atomic force microscopy(AFM),and scanning tunneling microscopy(STM).The realization of Sb nanofilms with specific thickness paves the way for the further exploring their thickness-dependent topological phase transitions and exotic physical properties.