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A novel structure in reducing the on-resistance of a VDMOS 被引量:1
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作者 杨永晖 唐昭焕 +4 位作者 张正元 刘勇 王志宽 谭开洲 冯志成 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期44-47,共4页
A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown volt... A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory, and there is only one additional mask in processing the new structure VDMOS, which is easily fabricated. With the TCAD tool, one 200 V N-channel VDMOS with the new structure is analyzed, and simulated results show that a specific on-resistance value will reduce by 23%, and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers. The novel structure can be widely used in the strip-gate VDMOS area. 展开更多
关键词 VDMOS on-resistance specific on-resistance breakdown voltage epitaxial layer resistance
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