Flexible oxide epitaxial thin films for wearable electronics:Fabrication,physical properties,and applications

Recently,flexible oxide epitaxial thin films are of increasing interests owing to their excellent physical properties and wide applications.The oxide epitaxial thin films with flexible,lightweight and wearable are promising for the applications in flexible and wearable devices,such as flexible sensors,flexible detectors,flexible oscillators,flexible spintronics,wearable displays and electronic skin,etc.This review aims to summarize the fabrication,physical properties and applications of the flexible oxide epitaxial thin films for wearable electronics in most recent few years.The fabrication of flexible oxide epitaxial thin films reviewed here mainly includes the deposition on flexible substrates at high temperature and epitaxial lift-off(ELO)from rigid substrates.The physical properties and applications of flexible oxide epitaxial thin films reviewed here chiefly focus on the area of electricity and magnetism,including stable and tunable physical properties in the flexible oxide epitaxial thin films.In final,the perspectives and challenges of flexible oxide thin films for wearable electronics have been also addressed.

Bipolar Resistive Switching in Epitaxial Mn_3O_4 Thin Films on Nb-Doped SrTiO_3 Substrates

Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.

Effect of Oxygen Partial Pressure on Epitaxial Growth and Properties of Laser-Ablated AZO Thin Films

Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures（P_（O2））.The effect of P_（O2） on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_（O2）.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A1_2O_3（000 1）.With increasing P_（O2）,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.

Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped （Sr1-xLax）2IrO4 （001） （x=0, 0.05, 0.1 and 0.15） single crystalline thin films and then investigate the doping dependence of the electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. It is found that with the increasing doping content, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point is evidently observed in the 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that the doping effectively suppresses the insulating state with respect to the as-grown Sr2IrO4, though the doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2 IrO4.

Grain boundary boosting the thermal stability of Pt/CeO_(2)thin films

Understanding how defect chemistry of oxide material influences the thermal stability of noble metal dopant ions plays an important role in designing high-performance heterogeneous catalytic systems.Here we use in-situ ambient-pressure X-ray photoemission spectroscopy(APXPS)to experimentally determine the role of grain boundary in the thermal stability of platinum doped cerium oxide(Pt/CeO_(2)).The grain boundaries were introduced in Pt/CeO_(2)thin films by pulsed laser deposition without significantly change of the surface microstructure.The defect level was tuned by the strain field obtained using a highly/low mismatched substrate.The Pt/CeO_(2)thin film models having well defined crystallographic properties but different grain boundary structural defect levels provide an ideal platform for exploring the evolution of Pt–O–Ce bond with changing the temperature in reducing conditions.We have direct demonstration and explanation of the role of Ce^(3+)induced by grain boundaries in enhancing Pt2+stability.We observe that the Pt^(2+)–O–Ce^(3+)bond provides an ideal coordinated site for anchoring of Pt^(2+)ions and limits the further formation of oxygen vacancies during the reduction with H_(2).Our findings demonstrate the importance of grain boundary in the atomic-scale design of thermally stable catalytic active sites.

Inhomogeneous-strain-induced magnetic vortex cluster in one-dimensional manganite wire

近几年的研究表明,具有强电子关联特性的锰氧化物晶体在自旋电子学领域具有潜在的应用价值.尤其该材料介观尺度的磁畴结构可以影响其许多新奇的物理特性,这些性质正被逐一揭示:例如高频自旋波的传播和巨拓扑霍尔效应等.在本项研究中,作者发现在单晶La0.67Sr0.33MnO3纳米线中具有磁通闭合自旋结构的磁涡旋团簇.具体来说,当La0.67Sr0.33MnO3纳米线的宽度小于1.0μm时,结合原位磁阻测量,在4 K下通过磁力显微镜直接观察到该纳米线的磁畴从指向面外的磁矩排列转变到磁通闭合的涡旋团簇状态.通过相场模拟表明,该锰氧化物纳米线中的不均匀应变以及形状各向异性是导致其磁通闭合的自旋结构稳定存在的关键因素.这项工作为理解和操控强关联体系中的新奇自旋结构提供了新的视角.