Science Letters: Equivalent thickness of materials of fused silica and stainless steel in the flow of microtubes

The deviation of flow characteristics from the predictions of the conventional theory for microtubes was attrib- uted to the change of fluid viscosity resulted from the interactions between the molecules on solid wall and in fluid. The degree of this departure is dependent on the microtubes materials. A concept of equivalent thickness with which conventional theory can be used to predict the flow in microtubes without modifying the fluid viscosity was put forward. The values of equivalent thickness for fused silica and stainless steel materials were determined as 1.8 μm and 1.5 μm, respectively, by repeated numeri- cal simulation.

Retrieving chlorophyll content and equivalent water thickness of Moso bamboo(Phyllostachys pubescens) forests under Pantana phyllostachysae Chao-induced stress from Sentinel-2A/B images in a multiple LUTs-based PROSAIL framework

Biochemical components of Moso bamboo(Phyllostachys pubescens)are critical to physiological and ecological processes and play an important role in the material and energy cycles of the ecosystem.The coupled PROSPECT with SAIL(PROSAIL)radiative transfer model is widely used for vegetation biochemical component content inversion.However,the presence of leaf-eating pests,such as Pantana phyllostachysae Chao(PPC),weakens the performance of the model for estimating biochemical components of Moso bamboo and thus must be considered.Therefore,this study considered pest-induced stress signals associated with Sentinel-2A/B images and field data and established multiple sets of biochemical canopy reflectance look-up tables(LUTs)based on the PROSAIL framework by setting different parameter ranges according to infestation levels.Quantitative inversions of leaf area index(LAI),leaf chlorophyll content(LCC),and leaf equivalent water thickness(LEWT)were derived.The scale conversions from LCC to canopy chlorophyll content(CCC)and LEWT to canopy equivalent water thickness(CEWT)were calculated.The results showed that LAI,CCC,and CEWT were inversely related with PPC-induced stress.When applying multiple LUTs,the p-values were<0.01;the R2 values for LAI,CCC,and CEWT were 0.71,0.68,and 0.65 with root mean square error(RMSE)(normalized RMSE,NRMSE)values of 0.38(0.16),17.56μg cm-2(0.20),and 0.02 cm(0.51),respectively.Compared to the values obtained for the traditional PROSAIL model,for October,R2 values increased by 0.05 and 0.10 and NRMSE decreased by 0.09 and 0.02 for CCC and CEWT,respectively and RMSE decreased by 0.35μg cm-2 for CCC.The feasibility of the inverse strategy for integrating pest-induced stress factors into the PROSAIL model,while establishing multiple LUTs under different pest-induced damage levels,was successfully demonstrated and can potentially enhance future vegetation parameter inversion and monitoring of bamboo forest health and ecosystems.

Equivalent oxide thickness scaling of Al_2O_3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.

Prediction of Apparent Equivalent Thickness Using the Spontaneous Potential Method and Its Application to Oilfield Development

The upper spontaneous potential produced by oil and gas accumulation is of a stable potential field, and its intensity is directly proportional to the content of the source and inversely proportional to the radius apart from the source. Theoretical research and practical results show that anomalies of spontaneous potential can indicate oil-bearing sandstone bodies and locate the areas of oil and gas accumulation. In oil areas which have fewer reservoir beds, the petroleum reservoir thickness can be predicted by determining the linear relationship between potential intensity and apparent equivalent thickness. In the Weixing （卫星） oilfield, which is devoid of sufficient reservoir beds, its apparent equivalent thickness can be predicted by the linear equation h= -0.19x＋0.74. On the basis of geological research, we use the spontaneous potential method to predict the equivalent thickness, helping in the selection of the most appropriate drill sites to enhance the probability of successful well boring so as to serve the next round development of the oilfield.

Nonlinear phase error analysis of equivalent thickness in a white-light spectral interferometer

A white light spectral interferometry based on a Linnik type system was established to accurately measure the thin film thickness through transparent medium.In practical work,the equivalent thickness of a beam splitter and the mismatch of the objective lens introduce nonlinear phase errors.Adding a transparent medium also increases the equivalent thickness.The simulation results showthat the equivalent thickness has a significant effect on thin film thickness measurements.Therefore,it is necessary to perform wavelength correction to provide a constant equivalent thickness for beamsplitters.In the experiments,some pieces of cover glasses as the transparent medium were added to the measured beam and then a standard thin film thickness of 1052.2±0.9 nm was tested through the transparent medium.The results demonstrate that our system has a nanometer-level accuracy for thin film thickness measurement through transparent medium with optical path compensation.

Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate

Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (<2 nm) N/O stack gate dielectrics with significant low leakage current and high resistance to boron penetration are fabricated.Experiment results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.

A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates

By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.

Influences of different structures on the characteristics of H_2O-based and O_3-based La_xAl_yO films deposited by atomic layer deposition

H_2O-based and O_3-based La_xAl_yO nanolaminate films were deposited on Si substrates by atomic layer deposition（ALD）. Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La_xAl_yO films were studied. Chemical bonds in the La_xAl_yO films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy（XPS）. The preliminary testing results indicate that the La_xAl_yO films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness（EOT）, electrical properties, and stability.

Dosimetric Effects of Thermoplastic Immobilizing Devices on Surface Dose

Thermoplastic immobilizing masks have dosimetric effects on the patient’s skin dose. The thermoplastic percentage depth dose (PDD), equivalent thickness of water for the masks and surface doses were determined. The surface dose factors due to the thermoplastic mask was found to be 1.7949, 1.9456, 2.0563, 2.1967, 2.3827, 2.5459 and 2.6565 for field sizes of 5 × 5, 8 × 8, 10 × 10, 12 × 12, 15 × 15, 18 × 18 and 20 × 20 cm2 respectively which shifted the percentage depth dose curve to lower values. The physical thermoplastic thickness was measured to be between 2.30 and 1.80 mm, and the equivalent thicknesses of water, de, were determined to be between 1.2 and 1.00 mm. This meant that, as the mask thickness decreased, its water equivalent thickness also decreased. The presence of the mask material increased the skin dose to a factor of 1%. The thermoplastic mask factor was also found to be 0.99.

Surface Finish Evaluation of AISI P100 Steel after Grinding with MQL Technique with Different Flow Rates

Grinding operation is a finishing process often employed when high precision and narrow geometric tolerances are required.These requirements can be achieved only if cutting conditions are properly selected,especially the cooling-lubrication technique.In general,grinding is performed in presence of cutting fluid,however,due to the environmental impacts and costs of the conventional coolant delivery technique(flow rates from 4 L/min to 300 L/min),alternative cooling-lubrication techniques have been developed on restriction of the coolants use.Among the several techniques,MQL(minimum quantity of lubricant)technique has received special attention from machining users because of its advantages in terms of surface quality of workpiece and drastic reduction in use of coolant.In this context,this paper evaluated the performance of the MQL technique as compared to the flood coolant in peripheral surface grinding of AISI P100(VP100)steel with conventional aluminum oxide grinding wheel in relation to the surface roughness(Ra and Rz).Input parameters tested were equivalent chip thickness(0.09μm,0.18μm and 0.27μm)and flow rate of the cutting fluid(60 mL/h,150 mL/h and 240 mL/h)of the MQL system.Results showed that the grinding with MQL technique provided lower surface roughness values compared to conventional flood cooling,especially when machining under the intermediary cutting conditions.Also,with exception of heq of 0.09 m,the MQL technique resulted in lower values of Rz parameter as compared to the conventional coolant technique,regardless of the flow rate tested.

An unmanned ground vehicle phenotyping-based method to generate three-dimensional multispectral point clouds for deciphering spatial heterogeneity in plant traits

Fusing three-dimensional(3D)and multispectral(MS)imaging data holds promise for high-throughput and comprehensive plant phenotyping to decipher genome-to-phenome knowledge.Acquiring high-quality 3D MS point clouds(3DMPCs)of plants remains challenging because of poor 3D data quality and limited radiometric calibration methods for plants with a complex canopy structure.Here,we present a novel 3D spatial–spectral data fusion approach to collect high-quality 3DMPCs of plants by integrating the next-best-view planning for adaptive data acquisition and neural reference field(NeREF)for radiometric calibration.This approach was used to acquire 3DMPCs of perilla,tomato,and rapeseed plants with diverse plant architecture and leaf morphological features evaluated by the accuracy of chlorophyll content and equivalent water thickness(EWT)estimation.The results showed that the completeness of plant point clouds collected by this approach was improved by an average of 23.6%compared with the fixed viewpoints alone.The NeREF-based radiometric calibration with the hemispherical reference outperformed the conventional calibration method by reducing the root mean square error(RMSE)of 58.93%for extracted reflectance spectra.The RMSE for chlorophyll content and EWT predictions decreased by 21.25%and 14.13%using partial least squares regression with the generated 3DMPCs.Collectively,our study provides an effective and efficient way to collect high-quality 3DMPCs of plants under natural light conditions,which improves the accuracy and comprehensiveness of phenotyping plant morphological and physiological traits,and thus will facilitate plant biology and genetic studies as well as crop breeding.

探索Bi_(2)SeO_(5)的高介电性能:从块体到双层和单层

Bi_(2)SeO_(5)是一种具有优异电绝缘性能的范德华(vdW)层状介电材料,引起了极大关注.然而,目前关于Bi_(2)SeO_(5)的研究主要停留在实验层面,仍然缺乏对其原子级薄膜的介电性能的相关理论认识.本文通过第一性原理计算确定了Bi_(2)SeO_(5)的介电性能,发现其块体、双层和单层均具有超高平均介电常数(εr>20).研究表明,单层Bi_(2)SeO_(5)与双层Bi_(2)O_(2)Se之间的导带和价带能量偏移量均大于1 eV,表明单层Bi_(2)SeO_(5)依然可作为原子薄Bi_(2)O_(2)Se的良好介电层.此外,不同于h-BN或其他2D vdW绝缘体,Bi_(2)SeO_(5)的εr由其离子部分主导,且随着厚度的减小几乎保持不变.计算发现,单层Bi_(2)SeO_(5)的等效氧化层厚度可薄至0.3 n m,且单层Bi_(2)SeO_(5)在拉伸或压缩应变达到6%时均能保持高介电常数,这极大地促进了它与各种二维半导体的集成.本工作证明单层Bi_(2)SeO_(5)可以作为高性能二维电子器件良好的封装和介电层.

Effect of Er ion implantation on the physical and electrical properties of TiN/HfO_2 gate stacks on Si substrate

In this paper, we report the fabrication, electrical and physical characteristics of TiN/HfO2/Si MOS capacitors with erbium （Er） ion implantation. It is demonstrated that the fiat band voltage can be reduced by 0.4 V due to the formation of Er oxide. Moreover, it is observed that the equivalent oxide thickness is thinned down by 0.5 nm because the thickness of interfacial layer is significantly reduced, which is thought to be attributed to the strong binding capability of the implanted Er atoms with oxygen atoms. In addition, cross-sectional transmission electron microscopy experiment shows that the HfO2 layer with Er ion implantation is still amorphous after annealing at a high temperature. This Er ion implantation technique has the potential to be implemented as a band edge metal gate solution for NMOS without a capping layer, and may also satisfy the demand of the EOT reduction in 32 nm technology node.

Water storage variations of the Yangtze,Yellow,and Zhujiang river basins derived from the DEOS Mass Transport (DMT-1) model

In general, China is short of water resources and some regions even experience a shortage of daily water supply. This could threaten the stability and economic development of the nation. A study on the water storage variations is especially important for the water management and storage prediction in three largest river basins of China, namely, Yangtze, Yellow, and Zhujiang, where the most dense population and leading economic regions are located. The satellite gravity mission GRACE （Gravity Recovery and Climate Experiment） provides an opportunity to macroseopically identify water （or mass） variations in the Earth＇s system with a spatial resolution of 300-400 km and a temporal resolution of about one month. We use the first release of the DEOS （Delft Institute of Earth Observation and Space Systems） Mass Transport （DMT-1） model based on GRACE data to analyze water storage changes in the three river basins. The DMT-1 model consists of monthly solutions, which are computed using an innovative methodology. The methodology includes, in particular, the application of a statistically optimal Wiener-type filter based on full varianee-covariance matrices of noise and signal. This results in particularly sharp mass variation maps. Taking one monthly solution as an example, we compare the results derived from the DMT-1 model with ones produced with the standard post-processing scheme based on a combination of the de-striping and Gaussian filtering. The comparison shows that the DMT-1 model outperforms the other models and is suitable for the analysis of the mass changes in river basins. A subset of the DMT-1 solutions in the interval between February 2003 and May 2008 is used to estimate the secular trends and seasonal variations for the three river basins. The estimated trends show that the water storage of the Yellow River basin does not have significant changes, while the Zhujiang and Yangtze river basins have a large and statistically significant water storage increase. The estimation of seasonal variations demonstrates that the water storage variations in Yangtze and Zhujiang river basins are almost in the same phase. The amplitude of variations in the Zhujiang River basin is larger than that in Yangtze. No clear annual variations are observed in the Yellow River basin. The observed water storage variations generally coincide with the observations and conclusions presented in the hydrological reports of the Chinese Ministry of Water Resources

Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/metal gate stack performance for a gate-last process

ALD HfO2 films fabricated by a novel multi deposition multi annealing （MDMA） technique are inves- tigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing （D＆A）, devices receiving MDMA show a signif- icant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D＆A （while keeping the total annealing time and total dielectrics thickness the same）. Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be re- sponsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme.