An equivalent circuit model for terahertz quantum cascade lasers:Modeling and experiments

Terahertz quantum cascade lasers（THz QCLs） emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model.Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

The initial stages of Li_(2)O_(2) formation during oxygen reduction reaction in Li-O_(2) batteries:The significance of Li_(2)O_(2) in charge-transfer reactions within devices

Lithium-oxygen batteries are a promising technology because they can greatly surpass the energy density of lithium-ion batteries.However,this theoretical characteristic has not yet been converted into a real device with high cyclability.Problems with air contamination,metallic lithium reactivity,and complex discharge and charge reactions are the main issues for this technology.A fast and reversible oxygen reduction reaction(ORR)is crucial for good performance of secondary batteries',but the partial knowledge of its mechanisms,especially when devices are concerned,hinders further development.From this perspective,the present work uses operando Raman experiments and electrochemical impedance spectroscopy(EIS)to assess the first stages of the discharge processes in porous carbon electrodes,following their changes cycle by cycle at initial operation.A growth kinetic formation of the discharge product signal(Li_(2)O_(2))was observed with operando Raman,indicating a first-order reaction and enabling an analysis by a microkinetic model.The solution mechanism in the evaluated system was ascribed for an equivalent circuit with three time constants.While the time constant for the anode interface reveals to remain relatively constant after the first discharge,its surface seemed to be more non-uniform.The model indicated that the reaction occurs at the Li_(2)O_(2) surface,decreasing the associated resistance during the initial discharge phase.Furthermore,the growth of Li_(2)O_(2) forms a hetero-phase between Li_(2)O_(2)/electrolyte,while creating a more compact and homogeneous on the Li_(2)O_(2)/cathode surface.The methodology here described thus offers a way of directly probing changes in surface chemistry evolution during cycling from a device through EIS analysis.

A compact X-band backward traveling-wave accelerating structure

Very high-energy electrons(VHEEs)are potential candidates for FLASH radiotherapy for deep-seated tumors.We proposed a compact VHEE facility based on an X-band high-gradient high-power technique.In this study,we investigated and realized the first X-band backward traveling-wave(BTW)accelerating structure as the buncher for a VHEE facility.A method for calculating the parameters of single cell from the field distribution was introduced to simplify the design of the BTW structure.Time-domain circuit equations were applied to calculate the transient beam parameters of the buncher in the unsteady state.A prototype of the BTW structure with a thermionic cathode-diode electron gun was designed,fabricated,and tested at high power at the Tsinghua X-band high-power test stand.The structure successfully operated with 5-MW microwave pulses from the pulse compressor and outputted electron bunches with an energy of 8 MeV and a pulsed current of 108 mA.

An equivalent model of discharge instability in the discharge chamber of Kaufman ion thruster

The industrial application of the Kaufman ion thruster in its arc stage is limited owing to the instability of the discharge pulse.Presently,a complete prediction model that can predict the discharge pulse in the high-current stage does not exist.In this study,a complete prediction model for the pulse in the ion thruster is established using the zero-dimensional plasma discharge model and equivalent circuit model.The zero-dimensional plasma discharge model is used to obtain the corresponding plasma parameters by calculating the beam current,discharge current,voltage,and gas flow under actual working conditions.The input parameters of the equivalent circuit model are calculated using empirical formulae to acquire the estimated discharge waveforms.The pulse waveforms obtained using the model are found to be consistent with the experimental results.The model is used to evaluate the process of rapid changes in plasma density.Additionally,this model is employed to predict changes in the pulse waveforms when the volume of the discharge chamber and grid plate transmittance are changed.

Online Identification of Lithium-ion Battery Model Parameters with Initial Value Uncertainty and Measurement Noise

Online parameter identification is essential for the accuracy of the battery equivalent circuit model(ECM).The traditional recursive least squares(RLS)method is easily biased with the noise disturbances from sensors,which degrades the modeling accuracy in practice.Meanwhile,the recursive total least squares(RTLS)method can deal with the noise interferences,but the parameter slowly converges to the reference with initial value uncertainty.To alleviate the above issues,this paper proposes a co-estimation framework utilizing the advantages of RLS and RTLS for a higher parameter identification performance of the battery ECM.RLS converges quickly by updating the parameters along the gradient of the cost function.RTLS is applied to attenuate the noise effect once the parameters have converged.Both simulation and experimental results prove that the proposed method has good accuracy,a fast convergence rate,and also robustness against noise corruption.

Early Debonding Detection of Rebar-Concrete Interface due to External Loading Utilizing AC Impedance Spectroscopy

A novel method for detecting early damage at the steel-concrete interface due to external loading based on AC impedance spectroscopy technology was proposed.Firstly,alkali pretreatment was introduced to ensure the accuracy and repeatability of the AC impedance test.Secondly,the AC impedance spectroscopy between the steel bar and concrete surface of different bonding positions was tested,and then the physical quantities reflecting the bonding damage condition were obtained by equivalent circuit fitting.Theoretical debonding position calculation and AC conductive structure analysis indicate that the change of interface resistance and interface capacitance can seize the development of bonding damage during the loading process.As the interface damage develops,obvious changes in interface resistance and interface capacitance are observed,and they cannot be recovered after unloading.

Impedance spectroscopy for quantum dot light-emitting diodes

Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.

Global simulation of plasma series resonance effect in radio frequency capacitively coupled Ar/O_(2) plasma

Radio frequency capacitively coupled plasmas(RF CCPs)play a pivotal role in various applications in etching and deposition processes on a microscopic scale in semiconductor manufacturing.In the discharge process,the plasma series resonance(PSR)effect is easily observed in electrically asymmetric and geometrically asymmetric discharges,which could largely influence the power absorption,ionization rate,etc.In this work,the PSR effect arising from geometrically and electrically asymmetric discharge in argon-oxygen mixture gas is mainly investigated by using a plasma equivalent circuit model coupled with a global model.At relatively low pressures,as Ar content(α)increases,the inductance of the bulk is weakened,which leads to a more obvious PSR phenomenon and a higher resonance frequency(ω_(psr)).When the Ar content is fixed,varying the pressure and gap distance could also have different effects on the PSR effect.With the increase of the pressure,the PSR frequency shifts towards the higher order,but in the case of much higher pressure,the PSR oscillation would be strongly damped by frequent electron-neutral collisions.With the increase of the gap distance,the PSR frequency becomes lower.In addition,electrically asymmetric waveforms applied to a geometrically asymmetric chamber may weaken or enhance the asymmetry of the discharge and regulate the PSR effect.In this work,the Ar/O_(2) electronegative mixture gas is introduced in a capacitive discharge to study the PSR effect under geometric asymmetry effect and electrical asymmetry effect,which can provide necessary guidance in laboratory research and current applications.

An Insight into the Second-Harmonic Current Reduction Control Strategies in Two-Stage Converters

Due to the components at twice the fundamental frequency of output voltage in the instantaneous output power of a two-stage single-phase inverter(TSI),the second harmonic current(SHC)is generated in the frontend dc-dc converter(FDC).To reduce the SHC,optimizing the control strategy of the FDC is an effective and costless approach.Fromthe view of visual impedance,this paper conducts an intensive study on the SHC reduction strategies.Origin of the SHC is illustrated first.Then,the equivalent circuit models of the FDC under different control strategies are proposed to analyse the SHC propagation characteristic.The derived model can offer a better insight into how the inductor SHC is affected by the control parameters.According to the derived models,a synthesis of different control strategies is presented and the relevant parameters are listed for control design to achieve better suppression effect.The benefits and limitations of these control strategies are also discussed.Based on the proposed equivalent circuit models,several optimization methods are proposed to enhance the effect.A 1500 VA TSI prototype is built and simulated on MATLAB/Simulink,verifying the effectiveness of the proposed optimization methods.This paper is aimed to provide a guideline for the control design and control optimization of the TSIs.

Transfer function modeling and analysis of the open-loop Buck converter using the fractional calculus

Based on the fact that the real inductor and the real capacitor are fractional order in nature and the fractional calculus,the transfer function modeling and analysis of the open-loop Buck converter in a continuous conduction mode（CCM） operation are carried out in this paper.The fractional order small signal model and the corresponding equivalent circuit of the open-loop Buck converter in a CCM operation are presented.The transfer functions from the input voltage to the output voltage,from the input voltage to the inductor current,from the duty cycle to the output voltage,from the duty cycle to the inductor current,and the output impedance of the open-loop Buck converter in CCM operation are derived,and their bode diagrams and step responses are calculated,respectively.It is found that all the derived fractional order transfer functions of the system are influenced by the fractional orders of the inductor and the capacitor.Finally,the realization of the fractional order inductor and the fractional order capacitor is designed,and the corresponding PSIM circuit simulation results of the open-loop Buck converter in CCM operation are given to confirm the correctness of the derivations and the theoretical analysis.

Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines

A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic function approach,including a relevant equation to reduce the deviation caused by approximation.The model consists of both series and shunt lumped elements and accounts for high-order parasitic effects.The equivalent circuit model is derived and verified to recover the frequency-dependent parameters at a range from direct current to 50 GHz accurately.The scalability of the model is proved by comparing simulated and measured scattering parameters with the method of cascade,attaining excellent results based on samples made from CMOS 0.13 and 0.18 μm process.

Two-port Equivalent Circuit Model for UHVDC Converter Valves

UHVDC converter valves during operation may experience overvoltage,which come from the AC or DC systems to which they are connected.Therefore,building an equivalent circuit model(ECM)for the converter valve to analyze the interlayer transient voltage distribution characteristics has important engineering significance for safe and reasonable voltage equalization methods and improving the stability of the DC system.This paper proposes a two-port equivalent circuit model for ±1100 kV converter valve based on the structure of the valve and parameter extraction methods presented.In terms of lumped parameters,integrated ECMs for valve layers are built through impedance-frequency characteristic analysis;in terms of parasitic capacitance parameters,port equivalent parasitic capacitance parameters are obtained by terminal capacitance method and iterative equivalence methods proposed in this paper.By combining integrated ECMs of valve layers and port equivalent parasitic capacitances,the two-port ECM is obtained.Simulations are carried out to test the effectiveness of the twoport ECM.Using the ECM,the voltage transmission characteristics and their influencing factors are analyzed,depending on which corresponding voltage equalization method is proposed in this paper,and the effect of this method is verified through simulation.

Diagnostic of capacitively coupled radio frequency plasma from electrical discharge characteristics：comparison with optical emission spectroscopy and fluid model simulation

The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.

An improved single-π equivalent circuit model for on-chip inductors in GaAs process

An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.

Intrinsic stability of an HBT based on a small signal equivalent circuit model

Intrinsic stability ofthe heterojunction bipolar transistor （HBT） was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.

Analyzing the efects of post couplers in DTL tuning by the equivalent circuit model

Stabilization of the accelerating field in Drift Tube Linac（DTL） is obtained by inserting Post Couplers（PCs）. On the basis of the equivalent circuit model for the DTL with and without asymmetrical PCs, stabilization is deduced quantitatively： we let δω/ω0 be the relative frequency error, then we discover that the sensitivity of field to perturbation is proportional to √δω/ω0 without PCs and to δω/ω0 with PCs. Then we adapt the circuit model of symmetrical PCs for the case of asymmetrical PCs. The circuit model shows how the slope of field distribution is changed by rotating the asymmetrical PCs and illustrates that the asymmetrical PCs have the same effect as the symmetrical ones in stabilization.

Measurement and Characterization of Microwave Interaction between Integrated Distributed Feedback Laser Diode and Electro-Absorption Modulator

Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.

Analyzing the Effects of Key Design Factors of a Negative-Differential-Resistance(NDR)Microfluidic Oscillator–an Equivalent-Circuit-Model Approach

Numerical study on dynamic hydroelastic problems is usually rather complex due to the coupling of fluid and solid mechanics.Here,we demonstrate that the performance of a hydroelastic microfluidic oscillator can be analyzed using a simple equivalent circuit model.Previous studies reveal that its transition from the steady state to the oscillation state follows the negative-differential-resistance(NDR)mechanism.The performance is mainly determined by a bias fluidic resistor,and a pressurevariant resistor which further relates to the bending stiffness of the elastic diaphragm and the depth of the oscillation chamber.In this work,a numerical study is conducted to examine the effects of key design factors on the device robustness,the applicable fluid viscosity,the flow rate,and the transition pressure.The underlying physics is interpreted,providing a new perspective on hydroelastic oscillation problems.Relevant findings also provide design guidelines of the NDR fluidic oscillator.

Improvements to Temperature, Warburg Impedance, and Voltage Computations for a Design-Based Predictive Model for Lithium-Ion Capacitors

An earlier study manipulated the Butler-Volmer equation to effectively model a lithium-ion capacitor’s (LIC) energy storage as a function of its constituent components and charge current. However, this model had several shortcomings: computed temperature values were too low, voltage was inaccurate, and the model required Warburg impedance values that were two orders of magnitude higher than experimental results. This study began by analyzing the model’s temperature and voltage computations in order to justify output values. Ultimately, these justifications failed. Therefore, in situ temperature rise was measured during charge cycles. Experimental results indicated that temperature increases minimally during a charge cycle (<1%). At high current densities (≥150 A·kg-1) temperature increase is negligible. After it was found that LIC temperature change is minimal during a charge cycle, the model accurately computed LIC voltage during the charge cycle and computed Warburg impedance that agreed with values derived from earlier experimental studies, even falling within the measurements’ precision error.