Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm^2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm^2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher（BOE） based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm^2 and the average detectivity of 4.51 × 10~9 cm·Hz^（1/2）.W^（-1）at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference（NEDT） of 22.9 mK operating at 77 K.

A sliding-mode triboelectric nanogenerator with chemical group grated structure by shadow mask reactive ion etching

With the support by the National Natural Science Foundation of China,a collaboration by the research groups led by Prof.Cheng Gang(程纲)from Henan University and Prof.Wang Zhonglin(王中林)from Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,invents'a sliding-mode triboelectric nanogenerator with chemical group grated structure by shadow mask reactive ion etching',which was published in ACS Nano(2017,11(9):8796-8803).

SU8 etch mask for patterning PDMS and its application to flexible fluidic microactuators

Over the past few decades,polydimethylsiloxane(PDMS)has become the material of choice for a variety of microsystem applications,including microfluidics,imprint lithography,and soft microrobotics.For most of these applications,PDMS is processed by replication molding;however,new applications would greatly benefit from the ability to pattern PDMS films using lithography and etching.Metal hardmasks,in conjunction with reactive ion etching(RIE),have been reported as a method for patterning PDMS;however,this approach suffers from a high surface roughness because of metal redeposition and limited etch thickness due to poor etch selectivity.We found that a combination of LOR and SU8 photoresists enables the patterning of thick PDMS layers by RIE without redeposition problems.We demonstrate the ability to etch 1.5-μm pillars in PDMS with a selectivity of 3.4.Furthermore,we use this process to lithographically process flexible fluidic microactuators without any manual transfer or cutting step.The actuator achieves a bidirectional rotation of 50°at a pressure of 200 kPa.This process provides a unique opportunity to scale down these actuators as well as other PDMS-based devices.