We report a simple and effective method to realize desirable interfacial property for inverted planar perovskite solar cells(PSCs)by using small molecule ethanediamine for the construction of a novel polyelectrolyte h...We report a simple and effective method to realize desirable interfacial property for inverted planar perovskite solar cells(PSCs)by using small molecule ethanediamine for the construction of a novel polyelectrolyte hole transport material(P3CT-ED HTM).It is found that P3CT-ED can not only improve the hole transport property of P3CT-K but also improve the crystallinity of adjacent perovskite film.In addition,the introduction of ethanediamine into P3CT realigns the conduction and valence bands upwards,passivates surface defects and reduces nonradiative recombination.As a consequence,compared to P3CT-K hole transport layer(HTL)based devices,the average power conversion efficiency(PCE)is boosted from17.2% to 19.6% for the counterparts with P3CT-ED,with simultaneous enhancement in open circuit voltage and fill factor.The resultant device displays a champion PCE of 20.5% with negligible hysteresis.展开更多
基金supported by the National Natural Science Foundation of China(51672288,21975273)Taishan Scholars Program of Shandong Province,Dalian National Laboratory for Clean Energy(DICP&QIBEBT No.UN201705)+1 种基金Scientific Research Cooperation Foundation of Qingdao Institute of Bioenergy and Bioprocess TechnologyQingdao Postdoctoral Application Research Project(Project 2018183,2018186)。
文摘We report a simple and effective method to realize desirable interfacial property for inverted planar perovskite solar cells(PSCs)by using small molecule ethanediamine for the construction of a novel polyelectrolyte hole transport material(P3CT-ED HTM).It is found that P3CT-ED can not only improve the hole transport property of P3CT-K but also improve the crystallinity of adjacent perovskite film.In addition,the introduction of ethanediamine into P3CT realigns the conduction and valence bands upwards,passivates surface defects and reduces nonradiative recombination.As a consequence,compared to P3CT-K hole transport layer(HTL)based devices,the average power conversion efficiency(PCE)is boosted from17.2% to 19.6% for the counterparts with P3CT-ED,with simultaneous enhancement in open circuit voltage and fill factor.The resultant device displays a champion PCE of 20.5% with negligible hysteresis.
