In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environme...In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40-nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence,but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer(LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.展开更多
To make decisions about event series is part of our life, and to discover knowledge from these decisions is of great significance in the field of controlling and decision-making. The paper takes event series as the ex...To make decisions about event series is part of our life, and to discover knowledge from these decisions is of great significance in the field of controlling and decision-making. The paper takes event series as the exterior form of movements with the dynamic attributes, and gets the Markov transition probabilities matrix to express those attributes with statistics. First, according to the matrix, the decision table is constructed. Then, by reducing attributes based on rough set theory, the decision table is reduced, and the decision rules are acquired as well. Finally we make the decision through defining rule distance and taking the minimum rule distance as decision principle. Followed is an example, which proves that the algorithm is feasible and effective to the event series decision.展开更多
The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear e...The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.展开更多
为了处理系统验证中大量存在的不确定性,国内学者将可能性理论引入到模型检测中,提出了广义可能性Kriple结构。广义可能性Kriple结构有着较好的应用前景,但有许多问题需要解决。其中的一个问题是,如何高效便捷地建立广义可能性Kriple结...为了处理系统验证中大量存在的不确定性,国内学者将可能性理论引入到模型检测中,提出了广义可能性Kriple结构。广义可能性Kriple结构有着较好的应用前景,但有许多问题需要解决。其中的一个问题是,如何高效便捷地建立广义可能性Kriple结构的数学模型。为了给广义可能性Kriple结构中的模糊事件提供一种便捷方便的建模方法,在建模的过程中引入具有三种否定的广义模糊集(Generalized Fuzzy Sets with Contradictory,Opposite and Medium negation,GFScom),给出了广义可能性Kriple结构中的模糊事件的建模方法。应用实例表明所提方法是有效、可行的。展开更多
A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector lo...A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.展开更多
As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing...As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.展开更多
As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient(SET) pulse quenching induced by single-event charge sharing...As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient(SET) pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation(STI). The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional(3D) technology computer-aided design simulation(TCAD) results show that this technique can achieve efficient SET mitigation.展开更多
基金Supported by National Natural Science Foundation of China(Nos.61176030 and 61373032)Specialized Research Fund for the Doctor Program of Higher Education of China(No.20124307110016)
文摘In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40-nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence,but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer(LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.
基金Supported by the National Natural Science Foundation of China (No.60474022)the Youth Found of Education Office in Sichuan Province , China (No.2006B044)
文摘To make decisions about event series is part of our life, and to discover knowledge from these decisions is of great significance in the field of controlling and decision-making. The paper takes event series as the exterior form of movements with the dynamic attributes, and gets the Markov transition probabilities matrix to express those attributes with statistics. First, according to the matrix, the decision table is constructed. Then, by reducing attributes based on rough set theory, the decision table is reduced, and the decision rules are acquired as well. Finally we make the decision through defining rule distance and taking the minimum rule distance as decision principle. Followed is an example, which proves that the algorithm is feasible and effective to the event series decision.
基金Project supported in part by the National Natural Science Foundation of China(Grant No.61974056)the Natural Science Foundation of Shanghai(Grant No.19ZR1471300)+1 种基金Shanghai Science and Technology Innovation Action Plan(Grant No.19511131900)Shanghai Science and Technology Explorer Plan(Grant No.21TS1401700)。
文摘The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.
文摘为了处理系统验证中大量存在的不确定性,国内学者将可能性理论引入到模型检测中,提出了广义可能性Kriple结构。广义可能性Kriple结构有着较好的应用前景,但有许多问题需要解决。其中的一个问题是,如何高效便捷地建立广义可能性Kriple结构的数学模型。为了给广义可能性Kriple结构中的模糊事件提供一种便捷方便的建模方法,在建模的过程中引入具有三种否定的广义模糊集(Generalized Fuzzy Sets with Contradictory,Opposite and Medium negation,GFScom),给出了广义可能性Kriple结构中的模糊事件的建模方法。应用实例表明所提方法是有效、可行的。
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
文摘A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
基金Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007)the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025)
文摘As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.
基金Project supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient(SET) pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation(STI). The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional(3D) technology computer-aided design simulation(TCAD) results show that this technique can achieve efficient SET mitigation.