Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron–hole bilayer

The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.

P-Tree Structures and Event Horizon： Efficient Event-Set Implementations

This paper describes efficient data structures, namely the Indexed P-tree, Block P-tree, and Indexed-Block P-tree （or/P-tree, BP-tree, and IBP-tree, respectively, for short）, for maintaining future events in a general purpose discrete event simulation system, and studies the performance of their event set algorithms under the event horizon principle. For comparison reasons, some well-known event set algorithms have been selected and studied, that is, the Dynamic-heap and the P-tree algorithms. To gain insight into the performance of the proposed event set algorithms and allow comparisons with the other selected algorithms, they are tested under a wide variety of conditions in an experimental way. The time needed for the execution of the Hold operation is taken as the measure for estimating the average time complexity of the algorithms. The experimental results show that the BP-tree algorithm and the IBP-tree algorithm behave very well with the event set of all the sizes and their performance is almost independent of the stochastic distributions.

Making Meaning through Prepositions:A Model for Teacher Trainees

This paper proposes a cognitive-semiotic model for teaching English prepositions within teacher training programs.The model is presented as a three-session grammar module that involves 1)creating an environment for the learners to see prepositional polysemy as multiple ways of viewing Trajector(TR)-Landmark(LM)spatial configurations(Tyler&Evans,2003,2005)and 2)guiding them to make meaning through prepositions in the context of Radden and Dirven’s(2007)event schemas.This is a simplex to complex inventory of constructions for talking about world events(i.e.the material,psychological and force-dynamic world events)that can be presented as manipulations of a basic TR-LM spatial configuration.Such a module is useful for native and non-native English teacher trainees alike considering that it allows for covering prepositional polysemy and use in a systematically graded manner,a manner that may help teacher trainees to learn to prepare conceptually-linked,graded materials for teaching prepositions to EFL(English as a foreign language)learners.